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The long-wavelength laser on InP (001) is fabricated, the temperature dependence of threshold current density is investigated. The nomalous decrescence of threshold current density is observed with the increase of temperature, which leads to a negative characteristic temperature. The origin of this phenomenon is discussed. We attribute the anomalous temperature dependence of threshold current density to the carrier redistribution effect.
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Keywords:
- quantum wires /
- laser /
- characteristic temperature
[1] Arakawa Y, Sakaki H 1982 Appl. Phys. Lett. 40 939
[2] Asada M, Miyamoto Y, Suematsu Y 1986 IEEE J. Quantum Electron. 32 1915
[3] Ledentsov N N, Shchukin V A, Grundmann M, Kirstaedter N, Böhrer J, Schmidt O, Bimberg D, Ustinov V M, Egorov A, Yu, Zhukov A E, Kop'ev P S, Zaitsev S V, Gordeev N Yu, Alferov Zh I, Borovkov A I, Kosogov A O, Ruvimov S S, Werner P, Gösele U, Heydenreich J 1996 Phys. Rev. B 54 8743
[4] Phillips J, Kamath K, Bhattacharya P 1998 Appl. Phys. Lett. 72 2020
[5] Pan D, Towe E, Kennerly S 1998 Appl. Phys. Lett. 73 1937
[6] Lambert B, Le Corre A, Drouot V, Haridon H L, Loualiche S 1998 Semicond. Sci. Technol. 13 143
[7] Carlsson N, Junno T, Montelius L, Pistol E, Samuelson L, Seifert W 1998 J. Cryst. Growth, 191 347
[8] Paranthoen C, Platz C, Moreau G, Bertru N, Dchaese O, Le Corre A, Miska P, Even J, Folliot H, Labbe C, Patriarche G, Simon J C, Loualiche S 2003 J. Crystal. Growth 251 230
[9] Wang R H, Stintz A, Varangis P M, Newell T C, Li H, Malloy K I, Laster L F 2001 IEE Photon. Technol. Lett. 13 767
[10] Schwertberger R, Gold D, Reithmaier J P, Forchel A 2002 IEE Photon. Technol. Lett. 14 735
[11] Schwertberger R, Gold D, Reithmaier J P, Forchel A 2003 J. Cryst. Growth 251 248
[12] Allen C N, Poole P J, Marshall P, Fraser J, Raymond S, Fafard S 2002 Appl. Phys. Lett 80 3629
[13] Jin S K, Jin H L, Sung U H, Won S H, Kwack H S, Chul W L, Dae K O 2004 Appl. Phys. Lett. 85 1033
[14] Jiang J P 2000 Semiconductor laser (1st Edn.) (Beijing: Electronic Industries Press) pp320-330 (in Chinese) [江剑平 2000 半导体激光器 (电子工业出版社) 第320—330页]
[15] Deng S L 2005 Master's Dissertation (Beijing: Institute of Semiconductors, Chinese Academy of Sciences) (in Chinese) [邓盛凌 2005 硕士学位论文 (北京: 中科院半导体所)]
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[1] Arakawa Y, Sakaki H 1982 Appl. Phys. Lett. 40 939
[2] Asada M, Miyamoto Y, Suematsu Y 1986 IEEE J. Quantum Electron. 32 1915
[3] Ledentsov N N, Shchukin V A, Grundmann M, Kirstaedter N, Böhrer J, Schmidt O, Bimberg D, Ustinov V M, Egorov A, Yu, Zhukov A E, Kop'ev P S, Zaitsev S V, Gordeev N Yu, Alferov Zh I, Borovkov A I, Kosogov A O, Ruvimov S S, Werner P, Gösele U, Heydenreich J 1996 Phys. Rev. B 54 8743
[4] Phillips J, Kamath K, Bhattacharya P 1998 Appl. Phys. Lett. 72 2020
[5] Pan D, Towe E, Kennerly S 1998 Appl. Phys. Lett. 73 1937
[6] Lambert B, Le Corre A, Drouot V, Haridon H L, Loualiche S 1998 Semicond. Sci. Technol. 13 143
[7] Carlsson N, Junno T, Montelius L, Pistol E, Samuelson L, Seifert W 1998 J. Cryst. Growth, 191 347
[8] Paranthoen C, Platz C, Moreau G, Bertru N, Dchaese O, Le Corre A, Miska P, Even J, Folliot H, Labbe C, Patriarche G, Simon J C, Loualiche S 2003 J. Crystal. Growth 251 230
[9] Wang R H, Stintz A, Varangis P M, Newell T C, Li H, Malloy K I, Laster L F 2001 IEE Photon. Technol. Lett. 13 767
[10] Schwertberger R, Gold D, Reithmaier J P, Forchel A 2002 IEE Photon. Technol. Lett. 14 735
[11] Schwertberger R, Gold D, Reithmaier J P, Forchel A 2003 J. Cryst. Growth 251 248
[12] Allen C N, Poole P J, Marshall P, Fraser J, Raymond S, Fafard S 2002 Appl. Phys. Lett 80 3629
[13] Jin S K, Jin H L, Sung U H, Won S H, Kwack H S, Chul W L, Dae K O 2004 Appl. Phys. Lett. 85 1033
[14] Jiang J P 2000 Semiconductor laser (1st Edn.) (Beijing: Electronic Industries Press) pp320-330 (in Chinese) [江剑平 2000 半导体激光器 (电子工业出版社) 第320—330页]
[15] Deng S L 2005 Master's Dissertation (Beijing: Institute of Semiconductors, Chinese Academy of Sciences) (in Chinese) [邓盛凌 2005 硕士学位论文 (北京: 中科院半导体所)]
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