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Total dose effects of domestic VDMOS devices used in satellite under different bias conditions are investigated. The dependences of the typical electrical parameters such as threshold voltage, breakdown voltage, on-state resistance, and leakage current on total dose are discussed. The experimental results show that the electrical parameters of the irradiated domestic VDMOS devices fulfill the design requirements. These devices also meet the work demand in a complex ionizing total dose irradiation environment. In addition, our experimental results are meaningful and important for further improving the design and the process of the others types of domestic radiation hardened VDMOS devices.
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Keywords:
- VDMOS /
- the total dose /
- irradiation effect /
- annealing
[1] Grant D A, Gowar J 1989 Power MOSFETs: theory and applications (Wiley: New York)
[2] Singh G, Galloway K F, Russell T J 1986 IEEE Trans. Nucl. Sci. 33 1454
[3] Liu Z L, Hu Z Y, Zhang Z X, Shao H, Chen M, Bi D W, Ning B X, Zou S C 2011 Chin. Phys. B 20 070701
[4] Xue S B, Huang R, Huang D T, Wang S H, Tan F, Wang J, An X, Zhang X 2011 Chin. Phys. B 20 117307
[5] Li L L, Yu Z G, Xiao Z Q, Zhou X J 2011 Acta Phys. Sin. 60 098502 (in Chinese) [李蕾蕾, 于宗光, 肖志强, 周昕杰 2011 60 098502]
[6] Zhao H F, Du L, He L, Bao J L 2011 Acta Phys. Sin. 60 028501 (in Chinese) [赵鸿飞, 杜磊, 何亮, 包军林 2011 60 028501]
[7] Schwank J 2002 IEEE Nuclear and Space Radiation Effects Conference Phoenix, Arizona July 15-19 2002 p Section III-1
[8] Gao B, Yu X F, Ren D Y, Cui J W, Lan B, Li M, Wang Y Y 2011 Acta Phys. Sin. 60 068702 (in Chinese) [高博, 余学峰, 任迪远, 崔江维, 兰博, 李明, 王义元 2011 60 068702]
[9] Lan B 2010 MS Thesis (Urumqi: Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences) (in Chinese) [兰博 2010 硕士学位论文(乌鲁木齐:中国科学院新疆理化技术研究所)]
[10] Seehra S S, Slusark W J 1982 IEEE Trans. Nucl. Sci. 29 1559
[11] McWhorter P J, Miller S L, Miller W M. 1990 IEEE Trans. Nucl. Sci. 37 1682
[12] Lelis A J, Oldham T R, DeLancey W M 1991 IEEE Trans. Nucl. Sci. 38 1590
[13] Fleetwood D M, Thome F V, Tsao S S, Dressendorfer P V, Dandini V J, Schwank J R 1988 IEEE Trans. Nucl. Sci. 35 1099
[14] Saks N S, Klein R B, Griscom D L 1988 IEEE Trans. Nucl. Sci. 35 1234
[15] Srour J R, Marshall C J, Marshall P W 2003 IEEE Trans. Nucl. Sci. 50 653
[16] Zhang M, Shen K Q 2007 Jou.l of Grad. Stu. SEU 5 154 (in Chinese) [张敏, 沈克强 2007 东南大学研究生学报 5 154]
[17] Chen X B 1990 Power MOSFET and High Voltage Integrated Circuit (Nanjing: Southeast University Press) p74 (in Chinese) [陈星弼 1990 功率MOSFET与高压集成电路 (南京:东南大学出版社) 第74页]
[18] Bai C H, Wang B 2007 Mode. Elec. Tec. 16 174 (in Chinese) [白朝辉, 王标 2007 现代电子技术 16 174]
[19] Felix J A, Shaneyfelt M R, Dodd P E, Draper B L, Schwank J R, Dalton S M 2005 IEEE Trans. Nucl. Sci. 52 2378
-
[1] Grant D A, Gowar J 1989 Power MOSFETs: theory and applications (Wiley: New York)
[2] Singh G, Galloway K F, Russell T J 1986 IEEE Trans. Nucl. Sci. 33 1454
[3] Liu Z L, Hu Z Y, Zhang Z X, Shao H, Chen M, Bi D W, Ning B X, Zou S C 2011 Chin. Phys. B 20 070701
[4] Xue S B, Huang R, Huang D T, Wang S H, Tan F, Wang J, An X, Zhang X 2011 Chin. Phys. B 20 117307
[5] Li L L, Yu Z G, Xiao Z Q, Zhou X J 2011 Acta Phys. Sin. 60 098502 (in Chinese) [李蕾蕾, 于宗光, 肖志强, 周昕杰 2011 60 098502]
[6] Zhao H F, Du L, He L, Bao J L 2011 Acta Phys. Sin. 60 028501 (in Chinese) [赵鸿飞, 杜磊, 何亮, 包军林 2011 60 028501]
[7] Schwank J 2002 IEEE Nuclear and Space Radiation Effects Conference Phoenix, Arizona July 15-19 2002 p Section III-1
[8] Gao B, Yu X F, Ren D Y, Cui J W, Lan B, Li M, Wang Y Y 2011 Acta Phys. Sin. 60 068702 (in Chinese) [高博, 余学峰, 任迪远, 崔江维, 兰博, 李明, 王义元 2011 60 068702]
[9] Lan B 2010 MS Thesis (Urumqi: Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences) (in Chinese) [兰博 2010 硕士学位论文(乌鲁木齐:中国科学院新疆理化技术研究所)]
[10] Seehra S S, Slusark W J 1982 IEEE Trans. Nucl. Sci. 29 1559
[11] McWhorter P J, Miller S L, Miller W M. 1990 IEEE Trans. Nucl. Sci. 37 1682
[12] Lelis A J, Oldham T R, DeLancey W M 1991 IEEE Trans. Nucl. Sci. 38 1590
[13] Fleetwood D M, Thome F V, Tsao S S, Dressendorfer P V, Dandini V J, Schwank J R 1988 IEEE Trans. Nucl. Sci. 35 1099
[14] Saks N S, Klein R B, Griscom D L 1988 IEEE Trans. Nucl. Sci. 35 1234
[15] Srour J R, Marshall C J, Marshall P W 2003 IEEE Trans. Nucl. Sci. 50 653
[16] Zhang M, Shen K Q 2007 Jou.l of Grad. Stu. SEU 5 154 (in Chinese) [张敏, 沈克强 2007 东南大学研究生学报 5 154]
[17] Chen X B 1990 Power MOSFET and High Voltage Integrated Circuit (Nanjing: Southeast University Press) p74 (in Chinese) [陈星弼 1990 功率MOSFET与高压集成电路 (南京:东南大学出版社) 第74页]
[18] Bai C H, Wang B 2007 Mode. Elec. Tec. 16 174 (in Chinese) [白朝辉, 王标 2007 现代电子技术 16 174]
[19] Felix J A, Shaneyfelt M R, Dodd P E, Draper B L, Schwank J R, Dalton S M 2005 IEEE Trans. Nucl. Sci. 52 2378
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