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报道了采用高压射频等离子体增强化学气相沉积(RF-PECVD) 制备高效率单结微晶硅电池和非晶硅/微晶硅叠层电池时几个关键问题的研究结果, 主要包括: 1)器件质量级本征微晶硅材料工艺窗口的确定及其结构和光电性能表征; 2)孵化层的形成机理以及减小孵化层的有效方法; 3)氢稀释调制技术对本征层晶化率分布及其对提高电池性能的作用; 4)高电导、高晶化率的微晶硅p型窗口层材料的获得, 及其对减小微晶硅电池p/i界面孵化层厚度和提高电池性能的作用等. 在解决上述问题的基础上, 采用高压RF-PECVD制备的单结微晶硅电池效率达8.16%, 非晶硅/微晶硅叠层电池效率11.61%.
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关键词:
- 高压射频等离子体增强化学气相沉积 /
- 微晶硅 /
- 孵化层 /
- 氢稀释调制
Our recent work on deposition and characterization of hydrogenated microcrystalline silicon (μ c-Si:H) thin films and silicon thin film solar cells prepared by RF-PECVD under high-pressure-depletion conditions is summarized in this paper. Several key issues are studied in detail: 1) process windows for device-quality μ c-Si:H thin films, 2) formation mechanism of amorphous silicon incubation layer and the effective methods to reduce the incubation layer thickness, 3) modification of crystalline fraction volume of intrinsic μ c-Si:H layers and its influence on the device performance of μ c-Si:H solar cells, 4) deposition of high conductive p-type μ c-Si:H window layers with high crystalline fraction volume, and the influence of p-layer on the device performance. After solving the above key issues, a high efficiency of 8.16% is obtained for μ c-Si:H sing-junction solar cell with intrinsic layer prepared by RF-PECVD under high-pressure-depletion conditions. When it is used as bottom cell in a-Si:H/μ c-Si:H tandem solar cell, the efficiency of tandem cell reaches 11.61%.-
Keywords:
- high-pressure RF-PECVD /
- hydrogenated microcrystalline silicon /
- incubation layer /
- hydrogen dilution profiling
[1] Shan A V, Schade H, Vanecek M, Meier J, Vallat-Sauvain E,Wyrsch N, Kroll U, Droz C, Bailat J 2004 Prog. Photovolt. Res.Appl. 12 113
[2] Mai Y, Klein S, Geng X, Finger F 2004 Appl. Phys. Lett. 85 2839
[3] Li H, Franken R H, Stolk R L, van derWerf C H M, Schuttauf J A,Rath J K, Schropp R E I 2007 Mater. Res. Soc. Symp. Proc. 989A18.3
[4] Nasuno Y, Kondo M, Matsuda A 2001 Jpn. J. Appl. Phys. 40 L303
[5] Sansonnens L, Schmidt H, Howling A, Hollenstein Ch, Ellert Ch,Buechel A 2006 J. Vac. Sci. Technol. A 24 1425
[6] Hrunski H, Scheib M, Mertz M, Schroeder B 2009 Thin SolidFilms 517 3370
[7] Guo L H, Kondo M, Fukawa M, Saitoh K, Matsuda A, 1998 Jpn.J. Appl. Phys. 37 L1116
[8] Kluth O, Rech B, Houben L, Wieder S, Schöpe G, Beneking C,Wagner H, Löffl A, Schock H W 1999 Thin Solid Films 351 247
[9] Chen X L, Xu B H, Xue J M, Zhao Y, Wei C C, Sun J, Wang Y,Zhang X D, Geng X H 2007 Thin Solid Films 515 3753
[10] Hou G F, Xue J M, Yuan Y J, Sun J, Zhao Y, Geng X H 2007Science in China Ser. G: Phys. Mech. & Astron. 50 731
[11] Hou G F, Xue J M, Sun J, Guo Q C, Zhang D K, Ren H Z, ZhaoY, Geng X H, Li Y G 2007 Aata Phys. Sin. 56 1177 (in Chinese) [侯国付, 薛俊明, 孙建, 郭群超, 张德坤, 任慧志, 赵颖,耿新华, 李乙钢 2007 56 1177]
[12] Hou G F, Guo Q C, Wang Y, Xue J M, Ren H Z, Sun J, Zhang XD, Zhao Y, Geng X H, Li Y G 2005 J. Synthetic Crystals 34 999(in Chinese) [侯国付, 郭群超, 王岩, 薛俊明, 任慧志, 孙建, 张晓丹,赵颖, 耿新华, 李乙钢 2005 人工晶体学报 34 999]
[13] Hou G F, Xue J M, Guo Q C, Sun J, Zhao Y, Geng X H, Li Y G2007 Chin. Phys. 16 553
[14] Han X Y, Hou G F, Li G J, Zhang X D, Yuan Y J, Zhang D K,Chen X L, Wei C C, Sun J, Zhao Y, Geng X H 2008 Acta Phys.Sin. 57 5284 (in Chinese) [韩晓艳, 侯国付, 李贵君, 张晓丹,袁育杰, 张德坤, 陈新亮, 魏长春, 孙健, 耿新华 2008 57 5284]
[15] Hou G F, Xue J M, Yuan Y J, Zhang D K, Sun J, Zhang J J, ZhaoY, Geng X H 2007 J. Synthetic Crystals 36 85 (in Chinese) [侯国付, 薛俊明, 袁育杰, 张德坤, 孙 建, 张建军, 赵颖,耿新华 2007 人工晶体学报 36 85]
[16] Yan B, Yue G, Yang J, Yang J, Guha S, Williamson D L, Jiang C2004 Appl. Phys. Lett. 85 1955
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[1] Shan A V, Schade H, Vanecek M, Meier J, Vallat-Sauvain E,Wyrsch N, Kroll U, Droz C, Bailat J 2004 Prog. Photovolt. Res.Appl. 12 113
[2] Mai Y, Klein S, Geng X, Finger F 2004 Appl. Phys. Lett. 85 2839
[3] Li H, Franken R H, Stolk R L, van derWerf C H M, Schuttauf J A,Rath J K, Schropp R E I 2007 Mater. Res. Soc. Symp. Proc. 989A18.3
[4] Nasuno Y, Kondo M, Matsuda A 2001 Jpn. J. Appl. Phys. 40 L303
[5] Sansonnens L, Schmidt H, Howling A, Hollenstein Ch, Ellert Ch,Buechel A 2006 J. Vac. Sci. Technol. A 24 1425
[6] Hrunski H, Scheib M, Mertz M, Schroeder B 2009 Thin SolidFilms 517 3370
[7] Guo L H, Kondo M, Fukawa M, Saitoh K, Matsuda A, 1998 Jpn.J. Appl. Phys. 37 L1116
[8] Kluth O, Rech B, Houben L, Wieder S, Schöpe G, Beneking C,Wagner H, Löffl A, Schock H W 1999 Thin Solid Films 351 247
[9] Chen X L, Xu B H, Xue J M, Zhao Y, Wei C C, Sun J, Wang Y,Zhang X D, Geng X H 2007 Thin Solid Films 515 3753
[10] Hou G F, Xue J M, Yuan Y J, Sun J, Zhao Y, Geng X H 2007Science in China Ser. G: Phys. Mech. & Astron. 50 731
[11] Hou G F, Xue J M, Sun J, Guo Q C, Zhang D K, Ren H Z, ZhaoY, Geng X H, Li Y G 2007 Aata Phys. Sin. 56 1177 (in Chinese) [侯国付, 薛俊明, 孙建, 郭群超, 张德坤, 任慧志, 赵颖,耿新华, 李乙钢 2007 56 1177]
[12] Hou G F, Guo Q C, Wang Y, Xue J M, Ren H Z, Sun J, Zhang XD, Zhao Y, Geng X H, Li Y G 2005 J. Synthetic Crystals 34 999(in Chinese) [侯国付, 郭群超, 王岩, 薛俊明, 任慧志, 孙建, 张晓丹,赵颖, 耿新华, 李乙钢 2005 人工晶体学报 34 999]
[13] Hou G F, Xue J M, Guo Q C, Sun J, Zhao Y, Geng X H, Li Y G2007 Chin. Phys. 16 553
[14] Han X Y, Hou G F, Li G J, Zhang X D, Yuan Y J, Zhang D K,Chen X L, Wei C C, Sun J, Zhao Y, Geng X H 2008 Acta Phys.Sin. 57 5284 (in Chinese) [韩晓艳, 侯国付, 李贵君, 张晓丹,袁育杰, 张德坤, 陈新亮, 魏长春, 孙健, 耿新华 2008 57 5284]
[15] Hou G F, Xue J M, Yuan Y J, Zhang D K, Sun J, Zhang J J, ZhaoY, Geng X H 2007 J. Synthetic Crystals 36 85 (in Chinese) [侯国付, 薛俊明, 袁育杰, 张德坤, 孙 建, 张建军, 赵颖,耿新华 2007 人工晶体学报 36 85]
[16] Yan B, Yue G, Yang J, Yang J, Guha S, Williamson D L, Jiang C2004 Appl. Phys. Lett. 85 1955
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