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In this paper, switching behaviors of MQCA inverter and majority logic gate with various nanomagnet thicknesses and spacings are studied. Single domain approximation Landau-Lifshitz-Gilbert equation is employed to model and simulate the circuits. It is shown that thicker nanomagnet needs larger switching magnetic pulse and logic circuits comprised of thicker nanomagnet demonstrate slower switching; majority logic gate needs more time to switch than inverter when they have the same nanomagnet thicknesses and spacings. Moreover, it is also shown that nanomagnet spacing has a larger effect on switching behavior of inverter than on majority logic gate.
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Keywords:
- magnetic quantum cellular automata /
- switching behavior /
- thickness and spacing /
- logic circuit
[1] Lent C S, Tougaw P D 1997 Proc. IEEE 85 541
[2] Amlani I, Orlov A, Toth G, Bernstein G H, Lent C S, Snider G L 1999 Science 284 5412
[3] Hu W, Sarveswaran K, Lieberman M, Bernstein G H 2005 IEEE Trans. Nanotechnol. 4 312
[4] Yang X K, Cai L, Zhao X H 2010 Electron. Lett. 46 825
[5] Vankamamidi V, Ottavi M, Lombardi F 2008 IEEE Trans. Comput. 57 606
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[7] Imre A, Csaba G, Ji L, Bernstein G H, Porod W 2006 Science 311 205
[8] Song S Y, Guo G H, Zhang G F, Song W B 2009 Acta. Phys. Sin. 58 5757 (in Chinese) [宋三元、郭光华、张光富、宋文斌 2009 58 5757]
[9] Niemier M, Dingler A, Sharon H X 2008 Proceedings of 26th IEEE International Conference on Computer Design 506
[10] Kumari A, Bhanja S 2009 IEEE Nanotechnology Materials and Devices Conference 50
[11] Carlton D B, Emley N C, Tuchfeld E, Bokor J 2008 Nano Letters 8 4173
[12] Niemier M, Crocker M, Sharon H X 2008 IEEE International Symposium on Defect and Fault Tolerance of VLSI Systems 534
[13] Alam M T, Siddiq M J, Bernstein G H, Niemier M, Porod W, Sharon H X 2010 IEEE Trans. Nanotechnol. 9 348
[14] Fidler J, Schrefl T 2000 J. Phys. D: Appl. Phys. 33 135
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[1] Lent C S, Tougaw P D 1997 Proc. IEEE 85 541
[2] Amlani I, Orlov A, Toth G, Bernstein G H, Lent C S, Snider G L 1999 Science 284 5412
[3] Hu W, Sarveswaran K, Lieberman M, Bernstein G H 2005 IEEE Trans. Nanotechnol. 4 312
[4] Yang X K, Cai L, Zhao X H 2010 Electron. Lett. 46 825
[5] Vankamamidi V, Ottavi M, Lombardi F 2008 IEEE Trans. Comput. 57 606
[6] Csaba G, Lugli P, Csurgay A, Porod W 2005 J. Comput. Electron. 4 105
[7] Imre A, Csaba G, Ji L, Bernstein G H, Porod W 2006 Science 311 205
[8] Song S Y, Guo G H, Zhang G F, Song W B 2009 Acta. Phys. Sin. 58 5757 (in Chinese) [宋三元、郭光华、张光富、宋文斌 2009 58 5757]
[9] Niemier M, Dingler A, Sharon H X 2008 Proceedings of 26th IEEE International Conference on Computer Design 506
[10] Kumari A, Bhanja S 2009 IEEE Nanotechnology Materials and Devices Conference 50
[11] Carlton D B, Emley N C, Tuchfeld E, Bokor J 2008 Nano Letters 8 4173
[12] Niemier M, Crocker M, Sharon H X 2008 IEEE International Symposium on Defect and Fault Tolerance of VLSI Systems 534
[13] Alam M T, Siddiq M J, Bernstein G H, Niemier M, Porod W, Sharon H X 2010 IEEE Trans. Nanotechnol. 9 348
[14] Fidler J, Schrefl T 2000 J. Phys. D: Appl. Phys. 33 135
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