溅射沉积自诱导混晶界面与Ge量子点的生长研究

熊飞; 潘红星; 张辉; 杨宇

doi:10.7498/aps.60.088102

摘要

在不同的沉积温度下采用离子束溅射技术,在Si基底上生长得到分布密度高、尺寸单模分布的圆顶形Ge量子点.研究发现:随沉积温度的升高Ge量子点的分布密度增大,尺寸减小,当沉积温度升高到750 ℃时,溅射沉积15个单原子层厚的Ge原子层,生长得到高度和底宽分别为14.5和52.7 nm的Ge量子点,其分布密度高达1.681010 cm-2;Ge量子点的形貌、尺寸和分布密度随沉积温度的演变规律与热平衡状态下气相凝聚的量子点不同,具有稳定形状特征和尺寸分布的Ge量子点是

关键词:

Abstract

The dense domes of Ge quantum dots on Si (001) substrate with a monomodal morphology distribution are deposited at different temperatures by ion beam sputtering (IBS). The areal density of the Ge quantum dots is observed to increase with elevating temperature, but the dots size to decrease. As the deposition temperature increases to 750 ℃, the smaller Ge quantum dots each with a height of 14.5 nm and base width of 52.7 nm are obtained by sputtering 15 monolayer Ge coverage, and the dots areal density is up to 1.681010 cm-2 at the same time. Thus the evolution of Ge quantum dot prepared by IBS is very different from that by vapor deposition at thermal equilibrium condition. The stable shape and the size distribution are demonstrated to result from the kinetic behavior of the surface atoms which is restricted by the thermodynamic limitations. A mix-crystal interface including amorphous and crystal components is revealed by Raman spectrum, and this special interface is demonstrated to contribute to the high density of Ge quantum dots, since the boundaries between the two different components can provide more preferential centers for the nucleation. As the density increases at high deposition temperature, the elastic repulsion between islands is enhanced, resulting in the surface atoms growing along the orientation of high index during the IBS deposition, and inducing the increase in aspect ratio and the reduction in island size.

Keywords:

作者及机构信息

1.
云南大学工程技术研究院,昆明 650091;

2.
昆明理工大学光电子新材料研究所,昆明 650093

基金项目: 云南省应用基础研究基金(批准号:2008CC012,2009CD003)、云南省教育厅科学研究基金重点项目(批准号:09C008)和云南大学科研基金(批准号:2009E28Q)资助的课题.

Authors and contacts

1.
Research Institute of Engineering and Technology, Yunnan University, Kunming 650091, China;

2.
Institute of Advanced Materials for Photo-electronics, Kunming University of Science and Technology, Kunming 650093, China

参考文献

[1]	Eaglesham D J, Cerullo M 1990 Phys. Rev. Lett. 64 1943
[2]	Larsson M, Elfving A, Holtz P O, Hnsson G V, Ni W X 2003 Surf. Sci. 532535 832
[3]
[4]
[5]	Rokhinson L P, Tsui D C, Benton J L 1999 Appl. Phys. Lett. 75 2413
[6]	Tong S, Lee J Y, Kin H J, Liu F, Wang K L 2005 Opt. Mater. 27 1097
[7]
[8]	Wang X, Jiang Z M, Zhu H J, Lu F, Huang D M, Kiu X H, Hu C W, Chen Y F, Zhu Z Q, Yao T 1997 Appl. Phys. Lett. 71 3543
[9]
[10]	Kamins T I, Carr E C, Williams R S, Rosner S J 1997 J. Appl. Phys. 81 211
[11]
[12]
[13]	Ross F M, Tromp R M, Reuter M C 1999 Science 286 1931
[14]	Jin G, Liu J L, Wang K L 2003 Appl. Phys. Lett. 83 2847
[15]
[16]
[17]	Medeiros-Ribeiro G, Bratkovski A M, Kamins T I, Ohlberg D A A, Williams R S 1998 Science 279 353
[18]
[19]	Capellini G, De Seta M, Evangelisti F 2003 J. Appl. Phys. 93 291
[20]	Shchukin V A, Ledentsov N N, Kopev P S, Bimberg D 1995 Phys. Rev. Lett. 75 2968
[21]
[22]	Kamins T I, Medeiros-Ribeiro G, Ohlberg D A A, Williams R S 1999 J. Appl. Phys. 85 1159
[23]
[24]	Sasaki K, Nabetani Y, Miyashita H, Hata T 2000 Thin Solid Films 369 171
[25]
[26]
[27]	Sasaki K, Takahashi Y, Ikeda T, Hata T 2002 Vacuum 66 457
[28]	Sasaki K, Nakata K, Hata T 1997 Appl. Surf. Sci. 113/114 43
[29]
[30]	Sasaki K, Nagai H, Hata T 2000 Vacuum 59 397
[31]
[32]	Vescan L, Stoica T, Chretien O, Goryll M, Mateeva E, Muck A 2000 J. Appl. Phys. 87 7275
[33]
[34]
[35]	Ross F M, Tersoff J, Tromp R M 1998 Phys. Rev. Lett. 80 984
[36]
[37]	Wagner R J, Gulari E 2005 Surf. Sci. 590 1
[38]
[39]	Shchukin V A, Ledentsov N N, Hoffmann A, Bimberg D, Soshnikov I P, Volovik B V, Ustnov V M, Litvinov D, Gerthsen D 2002 Phys. Stat. Sol. B 224 503
[40]
[41]	Barab A L 1999 Mater. Sci. Eng. B 67 23
[42]
[43]	Koduvely H M, Zangwill A 1999 Phys. Rev. B 60 R2204
[44]
[45]	Zhang Y W, Brower A F 2001 Appl. Phys. Lett. 78 2706
[46]
[47]	Chung H C, Liu C P, Lai Y L 2008 Appl. Phys. A 91 267
[48]	Floro J A, Lucadamo G A, Chason E, Freund L B, Sinclair M, Twesten R D, Hwang R Q 1998 Phys. Rev. Lett. 80 4717
[49]
[50]	Rickman J M, Srolovitz D J 1993 Surf. Sci. 284 211
[51]
[52]	Gonzalez-Hernandez J, Azarbayejani G H, Tsu R, Pollak F H 1985 Appl. Phys. Lett. 47 1350
[53]
[54]
[55]	Liu J L, Jin G, Tang Y S, Luo Y H, Wang K L, Yu D P 2000 Appl. Phys. Lett. 76 586
[56]	Duan B X, Yang Y T 2009 Acta Phys. Sin. 58 7114 (in Chinese) [段宝兴、杨印堂 2009 58 7114]
[57]
[58]
[59]	Cai Q J, Zhou H, Lu F 2007 Appl. Surf. Sci. 253 4792
[60]	Brya W J 1973 Solid State Commun. 12 253
[61]
[62]	Cerdeira F, Pinczuk A, Bean J C, Batlogg B, Wilson B A 1984 Appl. Phys. Lett. 45 1138
[63]

施引文献

[1]	Eaglesham D J, Cerullo M 1990 Phys. Rev. Lett. 64 1943
[2]	Larsson M, Elfving A, Holtz P O, Hnsson G V, Ni W X 2003 Surf. Sci. 532535 832
[3]
[4]
[5]	Rokhinson L P, Tsui D C, Benton J L 1999 Appl. Phys. Lett. 75 2413
[6]	Tong S, Lee J Y, Kin H J, Liu F, Wang K L 2005 Opt. Mater. 27 1097
[7]
[8]	Wang X, Jiang Z M, Zhu H J, Lu F, Huang D M, Kiu X H, Hu C W, Chen Y F, Zhu Z Q, Yao T 1997 Appl. Phys. Lett. 71 3543
[9]
[10]	Kamins T I, Carr E C, Williams R S, Rosner S J 1997 J. Appl. Phys. 81 211
[11]
[12]
[13]	Ross F M, Tromp R M, Reuter M C 1999 Science 286 1931
[14]	Jin G, Liu J L, Wang K L 2003 Appl. Phys. Lett. 83 2847
[15]
[16]
[17]	Medeiros-Ribeiro G, Bratkovski A M, Kamins T I, Ohlberg D A A, Williams R S 1998 Science 279 353
[18]
[19]	Capellini G, De Seta M, Evangelisti F 2003 J. Appl. Phys. 93 291
[20]	Shchukin V A, Ledentsov N N, Kopev P S, Bimberg D 1995 Phys. Rev. Lett. 75 2968
[21]
[22]	Kamins T I, Medeiros-Ribeiro G, Ohlberg D A A, Williams R S 1999 J. Appl. Phys. 85 1159
[23]
[24]	Sasaki K, Nabetani Y, Miyashita H, Hata T 2000 Thin Solid Films 369 171
[25]
[26]
[27]	Sasaki K, Takahashi Y, Ikeda T, Hata T 2002 Vacuum 66 457
[28]	Sasaki K, Nakata K, Hata T 1997 Appl. Surf. Sci. 113/114 43
[29]
[30]	Sasaki K, Nagai H, Hata T 2000 Vacuum 59 397
[31]
[32]	Vescan L, Stoica T, Chretien O, Goryll M, Mateeva E, Muck A 2000 J. Appl. Phys. 87 7275
[33]
[34]
[35]	Ross F M, Tersoff J, Tromp R M 1998 Phys. Rev. Lett. 80 984
[36]
[37]	Wagner R J, Gulari E 2005 Surf. Sci. 590 1
[38]
[39]	Shchukin V A, Ledentsov N N, Hoffmann A, Bimberg D, Soshnikov I P, Volovik B V, Ustnov V M, Litvinov D, Gerthsen D 2002 Phys. Stat. Sol. B 224 503
[40]
[41]	Barab A L 1999 Mater. Sci. Eng. B 67 23
[42]
[43]	Koduvely H M, Zangwill A 1999 Phys. Rev. B 60 R2204
[44]
[45]	Zhang Y W, Brower A F 2001 Appl. Phys. Lett. 78 2706
[46]
[47]	Chung H C, Liu C P, Lai Y L 2008 Appl. Phys. A 91 267
[48]	Floro J A, Lucadamo G A, Chason E, Freund L B, Sinclair M, Twesten R D, Hwang R Q 1998 Phys. Rev. Lett. 80 4717
[49]
[50]	Rickman J M, Srolovitz D J 1993 Surf. Sci. 284 211
[51]
[52]	Gonzalez-Hernandez J, Azarbayejani G H, Tsu R, Pollak F H 1985 Appl. Phys. Lett. 47 1350
[53]
[54]
[55]	Liu J L, Jin G, Tang Y S, Luo Y H, Wang K L, Yu D P 2000 Appl. Phys. Lett. 76 586
[56]	Duan B X, Yang Y T 2009 Acta Phys. Sin. 58 7114 (in Chinese) [段宝兴、杨印堂 2009 58 7114]
[57]
[58]
[59]	Cai Q J, Zhou H, Lu F 2007 Appl. Surf. Sci. 253 4792
[60]	Brya W J 1973 Solid State Commun. 12 253
[61]
[62]	Cerdeira F, Pinczuk A, Bean J C, Batlogg B, Wilson B A 1984 Appl. Phys. Lett. 45 1138
[63]

[1]	刘恒, 李晔, 杜梦超, 仇鹏, 何荧峰, 宋祎萌, 卫会云, 朱晓丽, 田丰, 彭铭曾, 郑新和. AlGaN合金的原子层沉积及其在量子点敏化太阳能电池的应用. , 2023, 72(13): 137701. doi: 10.7498/aps.72.20230113
[2]	王国建, 刘燕文, 李芬, 田宏, 朱虹, 李云, 赵恒邦, 王小霞, 张志强. 离子束表面处理对光电阴极发射的影响. , 2021, 70(21): 218503. doi: 10.7498/aps.70.20210587
[3]	李晔, 王茜茜, 卫会云, 仇鹏, 何荧峰, 宋祎萌, 段彰, 申诚涛, 彭铭曾, 郑新和. 原子层沉积的超薄InN强化量子点太阳能电池的界面输运. , 2021, 70(18): 187702. doi: 10.7498/aps.70.20210554
[4]	张鑫鑫, 靳映霞, 叶晓松, 王茺, 杨宇. 高速率沉积磁控溅射技术制备Ge点的退火生长研究. , 2014, 63(15): 156802. doi: 10.7498/aps.63.156802
[5]	吴建芳, 张国峰, 陈瑞云, 秦成兵, 肖连团, 贾锁堂. 界面电子转移对量子点荧光闪烁行为的影响. , 2014, 63(16): 167302. doi: 10.7498/aps.63.167302
[6]	包锦, 闫翠玲, 闫祖威. 三元混晶四层系统的表面和界面声子极化激元. , 2014, 63(10): 107105. doi: 10.7498/aps.63.107105
[7]	袁征, 戴一帆, 解旭辉, 周林. 离子束修形中光学元件表面热量沉积数值模拟. , 2012, 61(22): 225201. doi: 10.7498/aps.61.225201
[8]	杨杰, 王茺, 靳映霞, 李亮, 陶东平, 杨宇. 离子束溅射Ge量子点的应变调制生长. , 2012, 61(1): 016804. doi: 10.7498/aps.61.016804
[9]	熊飞, 杨杰, 张辉, 陈刚, 杨培志. 原子轰击调制离子束溅射沉积Ge量子点的生长演变. , 2012, 61(21): 218101. doi: 10.7498/aps.61.218101
[10]	张学贵, 王茺, 鲁植全, 杨杰, 李亮, 杨宇. 离子束溅射自组装Ge/Si量子点生长的演变. , 2011, 60(9): 096101. doi: 10.7498/aps.60.096101
[11]	陈立宝, 虞红春, 许春梅, 王太宏. 离子束辅助沉积硅薄膜负极材料的研究. , 2009, 58(7): 5029-5034. doi: 10.7498/aps.58.5029
[12]	何丽静, 林晓娉, 王铁宝, 刘春阳. 单晶Si表面离子束溅射沉积Co纳米薄膜的研究. , 2007, 56(12): 7158-7164. doi: 10.7498/aps.56.7158
[13]	王森, 俞国军, 巩金龙, 李勤涛, 朱德彰, 朱志远. 低能氩离子束对多孔铝阳极氧化膜表面的刻蚀效应研究. , 2006, 55(3): 1517-1522. doi: 10.7498/aps.55.1517
[14]	卢励吾, 王占国, C.L.Yang, J.Wang, Z.H.Ma, I.K.Sou, WeikunGe. 分子束外延生长ZnSe自组织量子点光、电行为研究. , 2002, 51(2): 310-314. doi: 10.7498/aps.51.310
[15]	张永平, 闫隆, 解思深, 庞世谨, 高鸿钧. Si(111)-(7×7)表面上Ge量子点的自组织生长. , 2002, 51(2): 296-299. doi: 10.7498/aps.51.296
[16]	廖梅勇, 秦复光, 柴春林, 刘志凯, 杨少延, 姚振钰, 王占国. 离子能量和沉积温度对离子束沉积碳膜表面形貌的影响. , 2001, 50(7): 1324-1328. doi: 10.7498/aps.50.1324
[17]	王震遐, 俞国庆, 阮美龄, 朱福英, 朱德彰, 潘浩昌, 徐洪杰. Ar+离子束轰击在石墨表面形成六方金刚石纳米晶的研究. , 2000, 49(8): 1524-1527. doi: 10.7498/aps.49.1524
[18]	吴正云, 黄启圣. 聚焦Ga+离子束注入方法研制半导体量子线结构. , 1996, 45(3): 486-490. doi: 10.7498/aps.45.486
[19]	王震遐, 潘冀生, 陶振兰, 章骥平, 张慧明, 张伟坪, 卢兆伦. 溅射原子角分布与靶点表面形貌的关联研究. , 1991, 40(2): 316-322. doi: 10.7498/aps.40.316
[20]	傅英, 徐文兰. Ge1-xSix混晶声子谱. , 1988, 37(1): 162-166. doi: 10.7498/aps.37.162

计量

文章访问数: 6076
PDF下载量: 1280
被引次数: 0

姓名
邮箱
手机号码
标题
留言内容
验证码

搜索

留言板