牺牲Ni退火对硅衬底GaN基发光二极管p型接触影响的研究

王光绪; 陶喜霞; 熊传兵; 刘军林; 封飞飞; 张萌; 江风益

doi:10.7498/aps.60.078503

摘要

本文通过在硅衬底发光二极管(LED)薄膜p-GaN表面蒸发不同厚度的Ni覆盖层,将其在N2 ∶O2=4 ∶1的气氛中、400℃—750℃的温度范围内进行退火,在去掉薄膜表面Ni覆盖层之后制备Pt/p-GaN欧姆接触层.实验结果表明:退火温度和Ni覆盖层厚度均对硅衬底GaN基LED薄膜p型欧姆接触有重要影响,Ni覆盖退火能够显著降低p型层中Mg受主的激活温度.经牺牲Ni退火后,p型比接触电阻率随退火温度的升高呈先变小后变大的规律,随Ni覆盖层厚度的增加呈先变小后变

关键词:

Abstract

Different thick Ni layers are deposited on the GaN-based LED films grown on Si(111) substrates, then LED films are annealed at 400℃—750 ℃ in the atmosphere of N2 ∶O2=4 ∶1. The Pt / p-GaN contact layer is prepared after removing the Ni-capping layer. It is found that annealing temperature and thickness of Ni-capping layer each have an important influence on the p-type contact of GaN-based LED film. The Ni film can significantly reduce the activation temperature of Mg acceptor of the p-type GaN. The characteristic of p-type contact of Ni-capping sample becomes better first then turns worse with annealing temperature and it become better then turns worse and then better with Ni-capping thickness. After optimization, the specific contact resistivity of Pt/p-GaN in the case of no second annealing can reach 6.1×10-5 Ω·cm2, when Ni-capping layer thickness is 1.5 nm and its annealing temperatune is 450 ℃.

Keywords:

作者及机构信息

(1)南昌大学教育部发光材料与器件工程研究中心,南昌 330047; (2)南昌大学教育部发光材料与器件工程研究中心,南昌 330047;晶能光电(江西)有限公司,南昌 330029

基金项目: 教育部长江学者与创新团队发展计划(批准号:IRT0730)和国家自然科学基金(批准号:51072076, 61040060)资助的课题.

Authors and contacts

(1)Education Ministry Engineering Research Center for Luminescence Materials and Devices, Nanchang University, Nanchang 330047, China; (2)Education Ministry Engineering Research Center for Luminescence Materials and Devices, Nanchang University, Nanchang 330047, China;Latticepower (Jiangxi) Corporation, Nanchang 330029, China

参考文献

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施引文献

[1]	Long H, Fang H, Qi S L, Sang L W, Cao W Y, Yan J, Deng J J, Yang Z J, Zhang G Y 2010 Chin. Phys. B 19 107307
[2]	Mo C L, Fang W Q, Pu Y, Liu H C, Jiang F Y 2005 J. Cryst. Growth 285 312
[3]	Xiong C b, Jiang F y, Fang W q, Wang L, Liu H c, Mo C l 2006 Sci. China E 49 313
[4]	Xiong C, Jiang F, Fang W, Wang L, Mo C, Liu H 2007 J. Lumin. 122-123 185
[5]	Feng F F, Liu J L, Qiu C, Wang G X, Jiang F Y 2010 Acta Phys. Sin. 59 5706 (in Chinese) [封飞飞、刘军林、邱冲、王光绪、江风益 2010 59 5706]
[6]	Senthil Kumar M, Park J Y, Lee Y S, Chung S J, Hong C H, Suh E K 2008 Jpn. J. Appl. Phys. 47 839
[7]	Chen Y X, Shen G D, Han J R, Li J J, Guo W L 2010 Acta Phys. Sin. 59 0545 (in Chinese) [陈依新、沈光地、韩金茹、李建军、郭伟玲 2010 59 0545]
[8]	Sheu J K, Chi G C, Jou M J 2001 IEEE Electr. Device. L. 22 160
[9]	Wang L J, Zhang S M, Zhu J H, Zhu J J, Zhao D G, Liu Z S, Jiang D S, Wang Y T, Yang H 2010 Chin. Phys. B 19 017307
[10]	Huang J Y, Fan G H, Zheng S W, Niu Q L, Li S T, Cao J X, Su J, Zhang Y 2010 Chin. Phys. B 19 047205
[11]	Nakamura S, Mukai T, Senoh M, Iwasa N 1992 Jpn. J. Appl. Phys. 31 L139
[12]	Kuo C H, Chang S J, Su Y K, Wu L W, Sheu J K, Chen C H, Chi G C 2002 Jpn. J. Appl. Phys. 41 L112
[13]	Waki I, Fujioka H, Oshima M, Miki H, Fukizawa A 2001 Appl. Phys. Lett. 78 2899
[14]	Chien-Chih L, Yuag-Hsin C, Mau-Phon H, Yeong-Her W, Yan-Kuin S, Wen-Bin C, Shi-Ming C 2004 IEEE Photonic. Tech. L. 16
[15]	Wang C C, Jenq F L, Liu C C, Hung C I, Wang Y H, Houng M P 2008 Semicond. Sci. Tech. 23 025012
[16]	Waki I, Fujioka H, Oshima M, Miki H, Okuyama M 2002 Appl. Surf. Sci. 190
[17]	Lin R M, Li J C, Chou Y L, Chen K H, Lin Y H, Lu Y C, Wu M C, Hung H, Lai W C 2007 IEEE Photonic. Tech. L. 19 928
[18]	Lee C M, Chuo C C, Liu Y C, Chen I L, Chyi J I 2004 IEEE Electr. Device. L. 25 384
[19]	Jang J S, Park S J, Seong T Y 1999 J. Vac. Sci. Technol. B 17 2667
[20]	Huh C, Kim H S, Kim S W, Lee J M, Kim D J, Lee I H, Park S J 2000 J. Appl. Phys. 87 4464
[21]	Arai T, Sueyoshi H, Koide Y, Moriyama M, Murakami M 2001 J. Appl. Phys. 89 2826
[22]	Jang J S, Park S J, Seong T Y 2002 Phys. Stat. Sol. (a) 194 576
[23]	Koide Y, Ishikawa H, Kobayashi S, Yamasaki S, Nagai S, Umezaki J, Koike M, Murakami M 1997 Appl. Surf. Sci. 117-118 373
[24]	Waki I, Fujioka H, Oshima M, Miki H, Okuyama M 2001 J. Appl. Phys. 90 6500
[25]	Tanner R E, Goldfarb I, Castell M R, Briggs G A D 2001 Surf. Sci. 486 167
[26]	Utlu G, Artun N, Budak S, Tari S 2010 Appl. Surf. Sci. 256 5069
[27]	Ducher R, Kainuma R, Ishida K 2007 Intermetallics 15 148
[28]	Guerin R, Guivarc'h A 1989 J. Appl. Phys. 66 2122
[29]	Venugopalan H S, Mohney S E, Luther B P, Wolter S D, Redwing J M 1997 J. Appl. Phys. 82 650
[30]	Nakamura S, Iwasa N, Senoh M, Mukai T 1992 Jpn. J. Appl. Phys. 31 1258
[31]	Huang K, Han R Q 1979 Fundamentals of semiconductor physics (1st ed) (Beijing:Science press) p207 (in Chinese) [黄昆、韩汝琦 1979 半导体物理基础 (第一版) (北京:科学出版社) 第207页]

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