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本文首先讨论了在沿[110]方向的单轴应力对体Si材料能带结构参数的影响,在此基础上计算出单轴应变Si中平衡载流子浓度,给出了物理意义明确的导带、价带有效态密度的表达式.最后,结合有效态密度和禁带宽度的表达式,建立了[110]/(001)单轴应变Si本征载流子浓度模型.本文的研究方法亦适用于建立(001)面任意应力方向上的应变Si本征载流子浓度模型,并为相关单轴应变Si器件的设计、建模以及仿真提供了一定的理论参考.
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关键词:
- [110]/(001)单轴应变Si /
- 有效态密度 /
- 本征载流子浓度
In this paper, the effect of uniaxial stress along [110] direction on the energy-band structure parameters of (001)-bulk Si is discussed, thereby we investigate the equilibrium carrier concentration and the expressions of effective density of state (DOS) in conduction and valence band, which contain explicit physical significance. The model of intrinsic carrier concentration is proposed by combining the expressions of DOS and bandgap. The pro- posed method in this paper is also applicable to modeling the intrinsic carrier concentration under the action of uniaxial stress along an arbitrary direction, and provides some references for design, mode- ling and simulation of similar uniaxial strained Si devices.-
Keywords:
- [110]/(001)-uniaxial strained Si /
- effective density of state /
- intrinsic carrier concentration
[1] Zhang Z F, Zhang H M, Hu H Y, Xuan R X, Song J J 2009 Acta Phys.Sin. 58 4948 (in Chinese) [张志锋、张鹤鸣、胡辉勇、宣荣喜、宋建军 2009 58 4948]
[2] Thompson S E, Sun G Y, Choi Y S 2006 IEEE Trans.Electron Devices 53 1010
[3] Shifren L, Wang X, Matagne P 2004 Appl. Phys. Lett. 85 6188
[4] Song J J, Zhang H M, Hu H Y, Dai X Y, Xuan R X 2007 Chin.Phys. 16 3827
[5] Song J J, Zhang H M, Dai X Y, Hu H Y, Xuan R X 2008 Acta Phys. Sin. 57 5918 (in Chinese) [宋建军、张鹤鸣、、戴显英、 胡辉勇、宣荣喜 2008 57 5918] 〖6] Song J J, Zhang H M, Hu H Y, Xuan R X, Dai X Y 2009 Acta Phys. Sin. 58 7947 (in Chinese) [宋建军、张鹤鸣、胡辉勇、宣荣喜、戴显英 2009 58 7947]
[6] Van der Walle C G 1989 Phys. Rew. B 39 1871
[7] Song J J, Zhang H M, Dai X Y, Hu H Y, Xuan R X, 2008 Acta Phys. Sin. 57 7228 (in Chinese) [宋建军、张鹤鸣、戴显英、胡辉勇、宣荣喜 2008 57 7228]
[8] Dhar S, Ungersbk E, Kosina S, Grasser T, Selberherr S 2007 IEEE Trans.Nano. 6 97
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[1] Zhang Z F, Zhang H M, Hu H Y, Xuan R X, Song J J 2009 Acta Phys.Sin. 58 4948 (in Chinese) [张志锋、张鹤鸣、胡辉勇、宣荣喜、宋建军 2009 58 4948]
[2] Thompson S E, Sun G Y, Choi Y S 2006 IEEE Trans.Electron Devices 53 1010
[3] Shifren L, Wang X, Matagne P 2004 Appl. Phys. Lett. 85 6188
[4] Song J J, Zhang H M, Hu H Y, Dai X Y, Xuan R X 2007 Chin.Phys. 16 3827
[5] Song J J, Zhang H M, Dai X Y, Hu H Y, Xuan R X 2008 Acta Phys. Sin. 57 5918 (in Chinese) [宋建军、张鹤鸣、、戴显英、 胡辉勇、宣荣喜 2008 57 5918] 〖6] Song J J, Zhang H M, Hu H Y, Xuan R X, Dai X Y 2009 Acta Phys. Sin. 58 7947 (in Chinese) [宋建军、张鹤鸣、胡辉勇、宣荣喜、戴显英 2009 58 7947]
[6] Van der Walle C G 1989 Phys. Rew. B 39 1871
[7] Song J J, Zhang H M, Dai X Y, Hu H Y, Xuan R X, 2008 Acta Phys. Sin. 57 7228 (in Chinese) [宋建军、张鹤鸣、戴显英、胡辉勇、宣荣喜 2008 57 7228]
[8] Dhar S, Ungersbk E, Kosina S, Grasser T, Selberherr S 2007 IEEE Trans.Nano. 6 97
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