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对一种非加固4007电路中p型金属氧化物半导体场效应晶体管(PMOSFET)在不同剂量率条件下的电离辐射损伤效应及高剂量率辐照后的退火效应进行了研究. 通过测量不同剂量率条件下PMOSFET的亚阈I-V特性曲线,得到阈值电压漂移量随累积剂量、退火时间的变化关系. 实验发现,此种型号的PMOSFET具有低剂量率辐射损伤增强效应. 通过描述H+在氧化层中的输运过程,解释了界面态的形成原因,初步探讨了非加固4007电路中PMOSFET低剂量率辐射损伤增强效应模型.
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关键词:
- p型金属氧化物半导体场效应晶体管 /
- 60Co γ射线 /
- 电离辐射损伤 /
- 低剂量率辐射损伤增强效应
In this paper, the ionizing damage effects and the annealing behaviors of an import producti, p-type metal-oxide-semiconductor field-effect transistor (PMOSFET), an unhardened 4007 circuit under different doses are investigated. We measure the sub-threshold I-V characteristic curves of PMOSFET under different bias doses. The dependence of the drift of threshold voltage on total dose is discussed. We also observe the relationship between the parameter and the annealing time. The experiment results show that the PMOSFET of this kind can enhance low dose rate sensitivity (ELDRS) effect. The interface-trap formation by H+ transmission in the SiO2 is explained.We believe that the interface trap is a primary reason to induce ELDRS effect of PMOSFET. We also discuss the physical model of enhancing low dose rate sensitivity effect of PMOSFET.-
Keywords:
- p-type metal-oxide-semiconductor field-effect transistor /
- 60Co γ-ray /
- total-dose irradiation damage effects /
- enhanced low dose rate sensitivity
[1] Sun J, Guo Q, Zhang J, Ren D Y, Lu W, Yu X F, Wen L, Wang G L, Zheng Y Z 2009 Microelectronics 39 128 (in Chinese) [孙 静、郭 旗、张 军、任迪远、陆 妩、余学锋、文 林、王改丽、郑玉展 2009 微电子学 39 128]
[2] Fan L, Ren D Y, Guo Q, Yan R L, Zhu G W, Wang S J, Liang J B 2002 Nucl. Electron. Detect. Technol. 22 289 (in Chinese) [范 隆、任迪远、郭 旗、严荣良、朱光武、王世金、梁金宝 2002 核电子学与探测技术 22 289]
[3] Fleetwood D M, Winokur P S, Schwank J R 1988 IEEE Trans. Nucl. Sci. 35 1497
[4] Kim S J, Seon J, Min K W, Shin Y H, Choe W 2003 Radiation and its Effects on Components and Systems Conference 669 Huis Ter Duin, The Netherlands, 15—19 September 2003
[5] Bogorad A L, Likar J J, Moyer S K, Ditzler A J, Doorley G P, Herschitz R 2008 Radiation Effects Data Workshop 124
[6] Zheng Y Z, Lu W, Ren D Y, Wang Y Y, Guo Q, Yu X F, He C F 2009 Acta Phys. Sin. 58 5572 (in Chinese) [郑玉展、陆 妩、任迪远、王义元、郭 旗、余学锋、何承发 2009 58 5572]
[7] Chen W H, Du L, Zhuang Y Q, Bao J L, He L, Zhang T F, Zhang X 2009 Acta Phys. Sin. 58 4090 (in Chinese) [陈伟华、杜 磊、庄奕琪、包军林、何 亮、张天福、张 雪 2009 58 4090]
[8] Wang J P, Xu N J, Zhang T Q, Tang H L, Liu J L, Liu C Y, Yao Y J, Peng H L, He B P, Zhang Z X 2000 Acta Phys. Sin. 49 1331 (in Chinese) [王剑屏、徐娜军、张廷庆、汤华莲、刘家璐、刘传洋、姚育娟、彭宏论、何宝平、张正选 2000 49 1331]
[9] Mcwhorter P J, Winokur P S 1986 Appl. Phys. Lett. 48 133
[10] Fan L, Jin T, He C F, Yan R L, Shen Z K 1998 Nucl. Tech. 21 534 (in Chinese) [范 隆、靳 涛、何承发、严荣良、沈志康 1998 核技术 21 534]
[11] Rashkeev S N, Cirba C R, Fleetwood D M, Schrimpf R D, Witczak S C, Michez A, Pantelides S T 2002 IEEE Trans. Nucl. Sci. 49 2650
[12] Mrstik B J, Rendell R W 1991 Appl. Phys. Lett. 59 3012
[13] Witczak S C, Lacoe R C, Mayer D C, Fleetwood D M, Schrimpf R D, Galloway K F 1998 IEEE Trans. Nucl. Sci. 45 2339
[14] Rashkeev S N, Fleetwood D M, Schrimpf R D, Pantelides S T 2001 Phys. Rev. Lett. 87 165506
[15] Bunson P E, Di Ventra M, Pantelides S T, Fleetwood D M, Schrimpf R D 2000 IEEE Trans. Nucl. Sci. 47 2289
[16] Lan B 2010 M. S. Dissertation (Urumqi: Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences) (in Chinese) [兰 博 2010 硕士学位论文(乌鲁木齐:中国科学院新疆理化技术研究所)]
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[1] Sun J, Guo Q, Zhang J, Ren D Y, Lu W, Yu X F, Wen L, Wang G L, Zheng Y Z 2009 Microelectronics 39 128 (in Chinese) [孙 静、郭 旗、张 军、任迪远、陆 妩、余学锋、文 林、王改丽、郑玉展 2009 微电子学 39 128]
[2] Fan L, Ren D Y, Guo Q, Yan R L, Zhu G W, Wang S J, Liang J B 2002 Nucl. Electron. Detect. Technol. 22 289 (in Chinese) [范 隆、任迪远、郭 旗、严荣良、朱光武、王世金、梁金宝 2002 核电子学与探测技术 22 289]
[3] Fleetwood D M, Winokur P S, Schwank J R 1988 IEEE Trans. Nucl. Sci. 35 1497
[4] Kim S J, Seon J, Min K W, Shin Y H, Choe W 2003 Radiation and its Effects on Components and Systems Conference 669 Huis Ter Duin, The Netherlands, 15—19 September 2003
[5] Bogorad A L, Likar J J, Moyer S K, Ditzler A J, Doorley G P, Herschitz R 2008 Radiation Effects Data Workshop 124
[6] Zheng Y Z, Lu W, Ren D Y, Wang Y Y, Guo Q, Yu X F, He C F 2009 Acta Phys. Sin. 58 5572 (in Chinese) [郑玉展、陆 妩、任迪远、王义元、郭 旗、余学锋、何承发 2009 58 5572]
[7] Chen W H, Du L, Zhuang Y Q, Bao J L, He L, Zhang T F, Zhang X 2009 Acta Phys. Sin. 58 4090 (in Chinese) [陈伟华、杜 磊、庄奕琪、包军林、何 亮、张天福、张 雪 2009 58 4090]
[8] Wang J P, Xu N J, Zhang T Q, Tang H L, Liu J L, Liu C Y, Yao Y J, Peng H L, He B P, Zhang Z X 2000 Acta Phys. Sin. 49 1331 (in Chinese) [王剑屏、徐娜军、张廷庆、汤华莲、刘家璐、刘传洋、姚育娟、彭宏论、何宝平、张正选 2000 49 1331]
[9] Mcwhorter P J, Winokur P S 1986 Appl. Phys. Lett. 48 133
[10] Fan L, Jin T, He C F, Yan R L, Shen Z K 1998 Nucl. Tech. 21 534 (in Chinese) [范 隆、靳 涛、何承发、严荣良、沈志康 1998 核技术 21 534]
[11] Rashkeev S N, Cirba C R, Fleetwood D M, Schrimpf R D, Witczak S C, Michez A, Pantelides S T 2002 IEEE Trans. Nucl. Sci. 49 2650
[12] Mrstik B J, Rendell R W 1991 Appl. Phys. Lett. 59 3012
[13] Witczak S C, Lacoe R C, Mayer D C, Fleetwood D M, Schrimpf R D, Galloway K F 1998 IEEE Trans. Nucl. Sci. 45 2339
[14] Rashkeev S N, Fleetwood D M, Schrimpf R D, Pantelides S T 2001 Phys. Rev. Lett. 87 165506
[15] Bunson P E, Di Ventra M, Pantelides S T, Fleetwood D M, Schrimpf R D 2000 IEEE Trans. Nucl. Sci. 47 2289
[16] Lan B 2010 M. S. Dissertation (Urumqi: Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences) (in Chinese) [兰 博 2010 硕士学位论文(乌鲁木齐:中国科学院新疆理化技术研究所)]
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