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To study the radicals behavior in the hot wire chemical vapour deposition (HWCVD) process for the preparation of microcrystalline Si (μc-Si: H) thin film, a weak radio frequency (rf) power was introduced to excite the radicals generated in HWCVD chamber. The spectrum of rf-excited HWCVD (rf-HWCVD) was obtained by subtracting the emission of hot wires from the spectrum measured by OES. The influence of the rf power on the rf-HWCVD spectrum can be neglected as the rf power density was less than 0.1 W/cm2. Under the same deposition parameters,the emission spectra for rf-HWCVD and plasma enhanced CVD (PECVD) processes are different. Under the low deposition pressure (7.5 Pa), the intensities of SiH* and Hα vary with the hot wire temperature reversely, which is characteristic of HWCVD with high gas dissociation rate and high concentration of atomic H. The ratio of intensity of Hα to SiH* in the emission spectrum of rf-HWCVD varying with deposition pressure is consistent with the crystalline fraction of μc-Si: H film. The results indicate that the optical emission spectroscopy measurement is a suitable method for the investigation of the HWCVD process excited by a weak rf-power.
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Keywords:
- HWCVD /
- OES /
- microcrystalline silicon
[1] Wei J, Chang J M, Tzeng Y 1992 Thin Solid Films 212 91
[2] Matsumura H 2001 Thin Solid Films 47 395
[3] Zhu M, Guo X, Chen G, Han H, He M, Sun K 2000 Thin Solid Films 360 205
[4] Liu F Z, Ward S, Gedvilas L, Keyes B, Wang Q, Sanchez E, Wang S 2004 J. Appl. Phys. 96 2973
[5] Zhou B Q 2005 Ph. D. Dissertation (Beijing: Graduate University of Chinese Academy of Sciences)(in Chinese) [周秉卿 2005 博士学位论文 (北京: 中国科学院研究生院)]
[6] Wang L J 2003 MS Thesis (Beijing: Graduate University of Chinese Academy of Sciences)(in Chinese) [汪六九 2003 硕士学位论文 (北京: 中国科学院研究生院)]
[7] Rath J K, Verkerk A D, Liu Y, Brinza M, Goedheer W J, Schropp R E I 2009 Materials Science and Engineering B 159 38
[8] Wu Z M, Lei Q S, Geng X H, Zhao Y, Sun J, Xi J P 2006 Chin. Phys. 15
[9] Yang H D, Wu C Y, Li H B, Mai Y H, Zhu F, Zhou Z H, Zhao Y, Geng X H, Xiong S Z 2003 Acta Phys. Sin. 52 2324 (in Chinese) [杨恢东、 吴春亚、 李洪波、 麦耀华、 朱 峰、 周祯华、 赵 颖、 耿新华、 熊绍珍 2003 52 2324]
[10] Duan H L, Zaharias G A, Bent Stacey F 2002 Materials Research Society 715 A15.5.1
[11] Nozaki Y, Kitazoe M, Horii K, Umemoto H, Masuda A,
[12] Fantz U 1998 Plasma Phys. Control. Fusion 40 1035
[13] Matsuda A 2004 Jpn. J. Appl. Phys. 43 7909
[14] Perrin J, Aarts J F M 1983 Chem. Phys. 80 351
[15] Kampas F J, Griffith R W 1981 J. Appl. Phys. 52 1285
[16] Gicquel A, Chenevier M, Hassouni K, Tserepi A, Dubus M 1998 J. Appl. Phys. 83 7504
[17] Fukuda Y, Sakuma Y, Fukai C, Fujimura Y, Azuma K, Shirai H 2001 Thin Solid Films 386 256
[18] Takai M, Nishimoto T, Kondo M, Matsuda A 2001 Thin Solid Films 390 83
[19] Matsuda A 1997 Plasma Phys. Control. Fusion 39 A431
[20] Chantana J, Higuchi T, Nagai T, Sasaki S, Sobajima Y, Toyama T, Sada C, Matsuda A, Okamoto H 2010 Phys. Status Solidi A 207 587
[21] Zhang X D, Zhao Y, Zhu F, Wei C C, Wu C Y, Gao Y T, Hou G F, Sun J, Geng X H, Xiong S Z 2005 Acta Phys. Sin. 54 446 (in Chinese) [张晓丹、 赵 颖、 朱 峰、 魏长春、 吴春亚、 高艳涛、 侯国付、 孙 建、 耿新华、 熊绍珍 2005 54 446]
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[1] Wei J, Chang J M, Tzeng Y 1992 Thin Solid Films 212 91
[2] Matsumura H 2001 Thin Solid Films 47 395
[3] Zhu M, Guo X, Chen G, Han H, He M, Sun K 2000 Thin Solid Films 360 205
[4] Liu F Z, Ward S, Gedvilas L, Keyes B, Wang Q, Sanchez E, Wang S 2004 J. Appl. Phys. 96 2973
[5] Zhou B Q 2005 Ph. D. Dissertation (Beijing: Graduate University of Chinese Academy of Sciences)(in Chinese) [周秉卿 2005 博士学位论文 (北京: 中国科学院研究生院)]
[6] Wang L J 2003 MS Thesis (Beijing: Graduate University of Chinese Academy of Sciences)(in Chinese) [汪六九 2003 硕士学位论文 (北京: 中国科学院研究生院)]
[7] Rath J K, Verkerk A D, Liu Y, Brinza M, Goedheer W J, Schropp R E I 2009 Materials Science and Engineering B 159 38
[8] Wu Z M, Lei Q S, Geng X H, Zhao Y, Sun J, Xi J P 2006 Chin. Phys. 15
[9] Yang H D, Wu C Y, Li H B, Mai Y H, Zhu F, Zhou Z H, Zhao Y, Geng X H, Xiong S Z 2003 Acta Phys. Sin. 52 2324 (in Chinese) [杨恢东、 吴春亚、 李洪波、 麦耀华、 朱 峰、 周祯华、 赵 颖、 耿新华、 熊绍珍 2003 52 2324]
[10] Duan H L, Zaharias G A, Bent Stacey F 2002 Materials Research Society 715 A15.5.1
[11] Nozaki Y, Kitazoe M, Horii K, Umemoto H, Masuda A,
[12] Fantz U 1998 Plasma Phys. Control. Fusion 40 1035
[13] Matsuda A 2004 Jpn. J. Appl. Phys. 43 7909
[14] Perrin J, Aarts J F M 1983 Chem. Phys. 80 351
[15] Kampas F J, Griffith R W 1981 J. Appl. Phys. 52 1285
[16] Gicquel A, Chenevier M, Hassouni K, Tserepi A, Dubus M 1998 J. Appl. Phys. 83 7504
[17] Fukuda Y, Sakuma Y, Fukai C, Fujimura Y, Azuma K, Shirai H 2001 Thin Solid Films 386 256
[18] Takai M, Nishimoto T, Kondo M, Matsuda A 2001 Thin Solid Films 390 83
[19] Matsuda A 1997 Plasma Phys. Control. Fusion 39 A431
[20] Chantana J, Higuchi T, Nagai T, Sasaki S, Sobajima Y, Toyama T, Sada C, Matsuda A, Okamoto H 2010 Phys. Status Solidi A 207 587
[21] Zhang X D, Zhao Y, Zhu F, Wei C C, Wu C Y, Gao Y T, Hou G F, Sun J, Geng X H, Xiong S Z 2005 Acta Phys. Sin. 54 446 (in Chinese) [张晓丹、 赵 颖、 朱 峰、 魏长春、 吴春亚、 高艳涛、 侯国付、 孙 建、 耿新华、 熊绍珍 2005 54 446]
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