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Ba1-xSrxTiO3及Ba0.6-xPbxSr0.4TiO3陶瓷的制备和介温特性研究

王梦 贺建龙 杨卫明 吴云翼 李建军 雷强 于军

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Ba1-xSrxTiO3及Ba0.6-xPbxSr0.4TiO3陶瓷的制备和介温特性研究

王梦, 贺建龙, 杨卫明, 吴云翼, 李建军, 雷强, 于军

Synthesis and temperature dependence of permittivity of Ba1-xSrxTiO3 and Ba0.6-xPbxSr0.4TiO3 ceramics

Wang Meng, He Jian-Long, Yang Wei-Ming, Wu Yun-Yi, Li Jian-Jun, Lei Qiang, Yu Jun
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  • 用固相反应法制备了Ba1-xSrxTiO3(BST)及Ba0.6-xPbxSr0.4TiO3(BPST)陶瓷,通过XRD,FESEM和拉曼谱分析了Pb掺杂对Ba0.6Sr0.4TiO3样品的晶格、相变及表面形貌的影响.测试了BST及B
    Ba1-xSrxTiO3 (BST) and Ba0.6-xPbxSr0.4TiO3 (BPST) ceramics were prepared by conventional solid-state reaction method. The analysis of XRD, FESEM and Raman spectroscopy showed the effects of Pb-doping on the crystal lattice,phase transition and surface morphology of Ba0.6Sr0.4TiO3, respectively. And the temperature dependence of permittivity (ε-T properties)for all ceramics were measured at a frequency of 10 kHz. The mechanism that Curie temperature and the peak value of permittivity are modulated by Sr and Pb content in BST and BPST perovskite has been revealed. In addition, all samples exhibit a diffused phase transition (DPT), especially for the ceramic Ba0.5Pb0.4Sr0.1TiO3, which can improve its temperature stability of tunability as phase shifter than others. Some ferroelectric parameters are calculated to interpret the DPT by adopting Smolenski’s theory and Curie-Wise law. For example, the values of diffuseness exponent α,Curie constant and transition region have changed from 1.29 to 1.73, from 1.25×105 to 2.87×105 K, and from 13.2 ℃ to 22.3 ℃, respectively.
    • 基金项目: 国家自然科学基金面上项目(批准号:60971008),高等学校博士学科点专项基金(批准号:200804870071) 资助的课题.
    [1]

    Franco F De, Alexopoulos N G 1997 IEEE Trans. on Microw. Theory Tech.45 963

    [2]

    Gabriel Velu,Karine Blary 2007 IEEE Trans. on Microw. Theory Tech. 55 438

    [3]

    Suherman PM, Jackson J, Tse Y 2006 J. Appl. Phys. 99 104101

    [4]

    Taeksoo Ji,Hargsoon,Jose K 2006 IEEE Trans. on Microw. Theory Tech. 54 1131

    [5]

    Xia Y D, Cai C, Zhi X Y, Pan B 2006 Appl.Phys.Lett. 88 182909

    [6]

    Pervez N K, Hansen P J, York R A 2004 Appl.Phys.Lett.85 4451

    [7]

    Cole M W, Ngo E, Hirsch S 2007 J.Appl.Phys. 102 034104

    [8]

    Smolenski G A 1970 J.Phys.Soc.Jpn. (supplement) 28 26

    [9]

    Liou Y C, Wu C T 2008 Ceram. Int. 34 517

    [10]

    Zhong W L 2000 Ferroelectric Physics(Beijing: Science Press) p342—343(in Chinese)[钟维烈2000铁电体物理学(北京:科学出版社) 第342—343页]

    [11]

    Szymczak L, Ujma Z, Adamzyk M, Pawelczyk M 2008 Ceram. Int. 34 1993

    [12]

    Alexandru H V, Berbercaru C, Ioachim A,Nedelcu L 2006 Appl. Surf.Scie. 253 354

    [13]

    Mohan C R K, Najpai P K 2008 Physica B 403 2173

    [14]

    Berbercaru C, Alexandru H V,Porosnicu,Velea A 2008 Thin Solid Films 516 8210

    [15]

    Tang Q W, Shen M R, Fang L 2006 Acta Phy.Sin.55 1346 (in Chinese)[唐秋文、沈明荣、方 亮 2006 55 1346]

    [16]

    Chang F G,Song G L,Fang K,Wang Z K 2007 Acta Phy.Sin. 56 6068 (in Chinese)[常方高、宋桂林、房 坤、王照奎 2007 56 6068]

    [17]

    Mao C W,Dong X L,Wang G S,Yao C H,Cao F,Cao S,Tang L H,Wang Y L 2009 Acta Phy.Sin. 58 5784(in Chinese)[毛朝梁、董显林、王根水、姚春华、曹 菲、曹 盛、杨丽慧、王永令2009 58 5784]

    [18]

    Sugita N,Tokumitsu E,Osada M, Kakaihana M 2003 Japan.J.Appl.Phys.42 L944

    [19]

    Zhu J,Mao X Y,Chen X B 2004 Acta Phy.Sin. 53 3929(in Chinese)[朱 骏、毛翔宇、陈小兵 2004 53 3929]

    [20]

    Pasha U M, Zheng H, Thakerur O P 2007 Appl.Phys.Lett.91 062908

    [21]

    Zhang J J,Zhai J W,Chou X J,Shao J,Lu X,Yao L 2009 Acta Materi. 57 4491

    [22]

    Tenne D A,Soukiassian A,Xi X X,Choosuwan H,Guo R,Bgalla A S 2004 Phys. Rev.B 70 174302

  • [1]

    Franco F De, Alexopoulos N G 1997 IEEE Trans. on Microw. Theory Tech.45 963

    [2]

    Gabriel Velu,Karine Blary 2007 IEEE Trans. on Microw. Theory Tech. 55 438

    [3]

    Suherman PM, Jackson J, Tse Y 2006 J. Appl. Phys. 99 104101

    [4]

    Taeksoo Ji,Hargsoon,Jose K 2006 IEEE Trans. on Microw. Theory Tech. 54 1131

    [5]

    Xia Y D, Cai C, Zhi X Y, Pan B 2006 Appl.Phys.Lett. 88 182909

    [6]

    Pervez N K, Hansen P J, York R A 2004 Appl.Phys.Lett.85 4451

    [7]

    Cole M W, Ngo E, Hirsch S 2007 J.Appl.Phys. 102 034104

    [8]

    Smolenski G A 1970 J.Phys.Soc.Jpn. (supplement) 28 26

    [9]

    Liou Y C, Wu C T 2008 Ceram. Int. 34 517

    [10]

    Zhong W L 2000 Ferroelectric Physics(Beijing: Science Press) p342—343(in Chinese)[钟维烈2000铁电体物理学(北京:科学出版社) 第342—343页]

    [11]

    Szymczak L, Ujma Z, Adamzyk M, Pawelczyk M 2008 Ceram. Int. 34 1993

    [12]

    Alexandru H V, Berbercaru C, Ioachim A,Nedelcu L 2006 Appl. Surf.Scie. 253 354

    [13]

    Mohan C R K, Najpai P K 2008 Physica B 403 2173

    [14]

    Berbercaru C, Alexandru H V,Porosnicu,Velea A 2008 Thin Solid Films 516 8210

    [15]

    Tang Q W, Shen M R, Fang L 2006 Acta Phy.Sin.55 1346 (in Chinese)[唐秋文、沈明荣、方 亮 2006 55 1346]

    [16]

    Chang F G,Song G L,Fang K,Wang Z K 2007 Acta Phy.Sin. 56 6068 (in Chinese)[常方高、宋桂林、房 坤、王照奎 2007 56 6068]

    [17]

    Mao C W,Dong X L,Wang G S,Yao C H,Cao F,Cao S,Tang L H,Wang Y L 2009 Acta Phy.Sin. 58 5784(in Chinese)[毛朝梁、董显林、王根水、姚春华、曹 菲、曹 盛、杨丽慧、王永令2009 58 5784]

    [18]

    Sugita N,Tokumitsu E,Osada M, Kakaihana M 2003 Japan.J.Appl.Phys.42 L944

    [19]

    Zhu J,Mao X Y,Chen X B 2004 Acta Phy.Sin. 53 3929(in Chinese)[朱 骏、毛翔宇、陈小兵 2004 53 3929]

    [20]

    Pasha U M, Zheng H, Thakerur O P 2007 Appl.Phys.Lett.91 062908

    [21]

    Zhang J J,Zhai J W,Chou X J,Shao J,Lu X,Yao L 2009 Acta Materi. 57 4491

    [22]

    Tenne D A,Soukiassian A,Xi X X,Choosuwan H,Guo R,Bgalla A S 2004 Phys. Rev.B 70 174302

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出版历程
  • 收稿日期:  2009-09-03
  • 修回日期:  2010-01-08
  • 刊出日期:  2010-09-15

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