非对称方势阱中的激子及其与声子的相互作用

邓艳平; 吕彬彬; 田强

doi:10.7498/aps.59.4961

摘要

采用类LLP(Lee-Low-Pines)变换和分数维变分法,在讨论有限深非对称方势阱Ga1－xAlxAs/ GaAs/Ga0.7Al0.3As的分数维基础上,计算了其中激子的基态能量以及声子对其影响,随着势阱宽度增加,激子能量先减小后增大,出现一个最小值.讨论了一侧势垒高度变化对分数维、激子基态能量的影响,并发现声子作用使得激子能量明显增大.另外,非对称方势阱中的激子结合能随阱宽的减小而增

关键词:

By LLP(Lee-Low-Pines)-like transformation and fractional-dimension variational treatment, the ground-state energies of excitons confined in Ga1－xAlxAs/GaAs/Ga0.7Al0.3As asymmetric square quantum well and the influence of phonons are demonstrated. The exciton ground-state energy has a minimum value with the increasing well width. And we make clear the effects of the barrier height on the fractional dimension, exciton ground energy and binding energy. After taking into account of the interaction of exciton with LO-phonons, the values of the exciton ground-state energies increase remarkablely. Moreover, the exciton binding energy increases as the asymmetric well-width decreases or the barrier height increases.

Keywords:

作者及机构信息

1.
北京师范大学物理系,北京 100875

基金项目: 国家自然科学基金(批准号:10574011)资助的课题.

Authors and contacts

1.
Department of Physics, Beijing Normal University, Beijing 100875, China

参考文献

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[19]	Greene R L, Bajaj K K, Phelps D E 1984 Phys. Rev. B 29 1807
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[21]	Zheng R S, Matsuura M 1997 Phys. Rev. B 56 2058
[22]	Andreani L C, Pasquarello A 1990 Phys. Rev. B 42 8928
[23]	Leavitt R P, Little J W 1990 Phys. Rev. B 42 11744
[24]	Antonelli A, Cen J, Bajaj K K 1996 Semicond. Sci. Technol. 11 74
[25]	Chen R, Bajaj K K 1997 Phys. Stat. Sol. (b) 199 417
[26]	Zhao G J, Liang X X, Ban S L 2003 Mod. Phys. Lett. B 17 863
[27]	He X F 1991 Phys. Rev. B 43 2063
[28]	Mathiew H, Lefebvre P, Christol P 1992 Phys. Rev. B 46 4092
[29]	de Dios-Leyva M, Bruno-Alfonso A, Matos-Abiague A, Oliveira L E 1997 J. Phys.: Condens. Matter 9 8477
[30]	Wang Z P, Liang X X, Wang X 2007 Phys J. B 59 41
[31]	Matos-Abiague A 2002 Semicond. Sci. Technol. 17 150
[32]	Mayes A, Yasan A, McClintock R, Shiell D, Darvish S R, Kung P, Razegh M 2004 Appl. Phys. Lett. 84 1046
[33]	Koga T, Nitta J, Akazaki T, Takayanagi H, 2002 Phys. Rev. Lett. 89 046801
[34]	Mathieu H, Lefebvre P, Christol P 1992 Phys. Rev. B 46 4092
[35]	Wang Z P, Liang X X 2005 Chin. Phys. Lett. 22 2367
[36]	Oshiro K, Akai K, Matsuura M 2002 Phys. Rev. B 66 153308

施引文献

[1]	Zhang H, Liu L, Liu J J 2007 Acta Phys.Sin. 56 487(in Chinese) [张红、刘磊、刘建军 2007 56 487]
[2]	Miller R C, Gossard A C, Kleinman D A, Munteanu O 1984 Phys. Rev. B 29 3470
[3]	Sen S, Capasso F, Gossard A C, Spah R A,Hutchinson A L, Chu S N G 1987 Appl. Phys. Lett. 51 1428
[4]	Chou S Y, Harris J S 1988 Appl. Phys. Lett. 52 1422
[5]	Yuh P, Wang K L 1988 Phys. Rev. B 38 13370
[6]	Kopf R F, Herman M H, Schnoes M L, Perley A P, Livescu G, Ohring M 1992 J. Appl. Phys. 71 5004
[7]	Liu C H,Chen C Y,Ma B K 2002 Acta Phys. Sin. 51 2022(in Chinese) [刘翠红、陈传誉、马本堃 2002 51 2022]
[8]	Zhao F Q,Zhou B Q 2007 Acta Phys. Sin. 56 4856(in Chinese) [赵凤岐、周炳卿 2007 56 4856]
[9]	Yu Y F, Xiao J L, Yin J W, Wang Z W 2008 Chin. Phys. B 17 2236
[10]	Sakiroglu S, Dogan U, Yildiz A, Akgungor K, Epik H, Ergun Y, Sari H, Sokmen I 2009 Chin. Phys. B 18 1578
[11]	Harouni M B, Roknizadeh R, Naderi M H 2009 Phys. Rev. B 79 165304
[12]	Mikhailov I D, Garcia L F, Marin J H 2008 Microelectron. J. 39 378
[13]	Senger R T, Bajaj K K 2003 Phys. Rev. B 68 045313
[14]	Wendler L, Haupt R 1987 Phys. Stat. Sol. (b) 143 487
[15]	Mori N, Ando T 1989 Phys. Rev. B 40 6275
[16]	Liang X X 1992 J. Phys.: Condens. Matter 4 9769
[17]	Zhao F Q, Liang X X 2002 Chin. Phys. Lett. 19 974
[18]	Miller R C, Kleinmann D A, Tsang W T, Gossard A C 1981 Phys. Rev. B 24 1134
[19]	Greene R L, Bajaj K K, Phelps D E 1984 Phys. Rev. B 29 1807
[20]	Miller D A, Chemla D S, Damen T D, Gossard A C, Wiegmann W, Wood T, Burrus C A 1985 Phys. Rev. B 32 1043
[21]	Zheng R S, Matsuura M 1997 Phys. Rev. B 56 2058
[22]	Andreani L C, Pasquarello A 1990 Phys. Rev. B 42 8928
[23]	Leavitt R P, Little J W 1990 Phys. Rev. B 42 11744
[24]	Antonelli A, Cen J, Bajaj K K 1996 Semicond. Sci. Technol. 11 74
[25]	Chen R, Bajaj K K 1997 Phys. Stat. Sol. (b) 199 417
[26]	Zhao G J, Liang X X, Ban S L 2003 Mod. Phys. Lett. B 17 863
[27]	He X F 1991 Phys. Rev. B 43 2063
[28]	Mathiew H, Lefebvre P, Christol P 1992 Phys. Rev. B 46 4092
[29]	de Dios-Leyva M, Bruno-Alfonso A, Matos-Abiague A, Oliveira L E 1997 J. Phys.: Condens. Matter 9 8477
[30]	Wang Z P, Liang X X, Wang X 2007 Phys J. B 59 41
[31]	Matos-Abiague A 2002 Semicond. Sci. Technol. 17 150
[32]	Mayes A, Yasan A, McClintock R, Shiell D, Darvish S R, Kung P, Razegh M 2004 Appl. Phys. Lett. 84 1046
[33]	Koga T, Nitta J, Akazaki T, Takayanagi H, 2002 Phys. Rev. Lett. 89 046801
[34]	Mathieu H, Lefebvre P, Christol P 1992 Phys. Rev. B 46 4092
[35]	Wang Z P, Liang X X 2005 Chin. Phys. Lett. 22 2367
[36]	Oshiro K, Akai K, Matsuura M 2002 Phys. Rev. B 66 153308

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