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ZnO thin films were implanted at room temperature with 80 keV N+ or 400 keV Xe+ ions. The implantation fluences of N+ and Xe+ ranged from 5.0×1014 to 1.0×1017/cm2, and from 2.0×1014 to 5.0×1015/cm2, respectively. The samples were analyzed using Raman spectroscopy and the Raman scattering modes of the N- and Xe-ion implanted samples varying with implantation fluences were investigated. It was found that Raman peaks (bands) at 130 and 578 cm-1 appeared in the spectra of ion-implanted ZnO samples, which are independent of the ion species, whereas a new peak at 274 cm-1 was found only in N-ion implanted samples, and Raman band at 470 cm-1 was found clearly in Xe-ion implanted samples. The relative intensity (peak area) increased with the increasing of the implantation fluences. From the comparison of the Raman spectra of N- and Xe-ion implanted ZnO samples and considering the damage induced by the ions, we analyzed the origin of the observed new Raman peaks (bands) and discussed the structure changes of ZnO films induced by N- and Xe-ion implantations.
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Keywords:
- ZnO films /
- ion implantation /
- Raman spectroscopy
[1] zgür V, Alivov Y I, Liu C, Teke A, Reshchikov M A, Do Agˇ an S, Avrutin V, Cho S J, Morko H 2005 J. Appl. Phys. 98 041301
[2] Pearton S J, Norton D P, Ip K, Heo Y W, Steiner T 2005 Prog. Mater. Sci. 50 293
[3] Zhang D H, Wang Q P, Xue Z Y 2003 Acta Phys. Sin. 52 1484 (in Chinese) [张德恒、王卿璞、薛忠营 2003 52 1484]
[4] Pan F, Song C, Liu X J, Yang Y C, Zeng F 2008 Mater. Sci. Eng. R 62 1
[5] Kucheyev S O, Williams J S, Jagadish C, Zou J, Evans C, Nelson A J, Hamza A V 2003 Phys. Rev. B 67 094115
[6] Chen Z Q, Maekawa M, Yamamoto S, Kawasuso A, Yuan X L, Sekiguchi T, Suzuki R, Ohdaira T 2004 Phys. Rev. B 69 035210
[7] Wang K, Ding Z B, Chen T X, Chen D, Yao S D, Fu Z X 2008 Nucl. Instrum. Meth. Phys. Res. B 266 2962
[8] Chen Z Q, Kawasuso A 2006 Acta Phys. Sin. 55 4353 (in Chinese) [陈志权、河裾厚男 2006 55 4353]
[9] Yu J G, Xing H Z, Zhao Q, Mao H B, Shen Y, Wang J Q, Lai Z S, Zhu Z Q 2006 Solid State Commun. 138 502
[10] Friedrich F, Nickel N H 2007 Appl. Phys. Lett. 91 111903
[11] Li H, Sang J P, Mei F, Ren F, Zhang L, Liu C 253 Appl. Surf. Sci. 253 8524
[12] Chen Z Q, Kawasuso A, Xu Y, Naramoto H, Yuan X L, Sekiguchi T, Suzuki R, Ohdaira T 2005 J. Appl. Phys. 97 013528
[13] Reuss F, Kirchner C, Gruber Th, Kling R, Maschek S, Limmer W, Waag A, Ziemann P 2004 J. Appl. Phys. 95 3385
[14] Kaschner A, Haboeck U, Strassburg M, Strassburg M, Kaczmarczyk G, Hoffmann A, Thomsen C, Zeuner A, Alves H R, Hofmann D M, Meyer B K 2002 Appl. Phys. Lett. 80 1909
[15] Bundesmann C, Ashkenov N, Schubert M, Spemann D, Butz T, Kaidashev E M, Lorenz M, Grundmann M 2003 Appl. Phys. Lett. 83 1974
[16] Wang J B, Zhong H M, Li Z F, Lu W 2006 Appl. Phys. Lett. 88 101913
[17] Zang H, Wang Z G, Wei K F, Sun J R, Yao C F, Shen T L, Ma Y Z, Yang C S, Pang L L, Zhu Y B 2010 Nuclear Physics Review 27 87(in Chinese)[臧 航、王志光、魏孔芳、孙建荣、姚存峰、申铁龙、马艺准、杨成绍、庞立龙、朱亚斌 2010 原子核物理评论 27 87]
[18] Damen T C, Porto S P S, Tell B 1966 Phys. Rev. 142 570
[19] Kennedy J, Sundrakannan B, Katiyar R S, Markwitz A, Li Z, Gao W 2008 Current Appl. Phys. 8 291
[20] Liu X J, Song C, Zeng F, Pan F 2008 Thin Solid Films 516 8757
[21] Du C L, Gu Z B, Lu M H, Wang J, Zhang S T, Zhao J, Cheng G X, Heng H, Chen Y F 2006 J. Appl. Phys. 99 123515
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[1] zgür V, Alivov Y I, Liu C, Teke A, Reshchikov M A, Do Agˇ an S, Avrutin V, Cho S J, Morko H 2005 J. Appl. Phys. 98 041301
[2] Pearton S J, Norton D P, Ip K, Heo Y W, Steiner T 2005 Prog. Mater. Sci. 50 293
[3] Zhang D H, Wang Q P, Xue Z Y 2003 Acta Phys. Sin. 52 1484 (in Chinese) [张德恒、王卿璞、薛忠营 2003 52 1484]
[4] Pan F, Song C, Liu X J, Yang Y C, Zeng F 2008 Mater. Sci. Eng. R 62 1
[5] Kucheyev S O, Williams J S, Jagadish C, Zou J, Evans C, Nelson A J, Hamza A V 2003 Phys. Rev. B 67 094115
[6] Chen Z Q, Maekawa M, Yamamoto S, Kawasuso A, Yuan X L, Sekiguchi T, Suzuki R, Ohdaira T 2004 Phys. Rev. B 69 035210
[7] Wang K, Ding Z B, Chen T X, Chen D, Yao S D, Fu Z X 2008 Nucl. Instrum. Meth. Phys. Res. B 266 2962
[8] Chen Z Q, Kawasuso A 2006 Acta Phys. Sin. 55 4353 (in Chinese) [陈志权、河裾厚男 2006 55 4353]
[9] Yu J G, Xing H Z, Zhao Q, Mao H B, Shen Y, Wang J Q, Lai Z S, Zhu Z Q 2006 Solid State Commun. 138 502
[10] Friedrich F, Nickel N H 2007 Appl. Phys. Lett. 91 111903
[11] Li H, Sang J P, Mei F, Ren F, Zhang L, Liu C 253 Appl. Surf. Sci. 253 8524
[12] Chen Z Q, Kawasuso A, Xu Y, Naramoto H, Yuan X L, Sekiguchi T, Suzuki R, Ohdaira T 2005 J. Appl. Phys. 97 013528
[13] Reuss F, Kirchner C, Gruber Th, Kling R, Maschek S, Limmer W, Waag A, Ziemann P 2004 J. Appl. Phys. 95 3385
[14] Kaschner A, Haboeck U, Strassburg M, Strassburg M, Kaczmarczyk G, Hoffmann A, Thomsen C, Zeuner A, Alves H R, Hofmann D M, Meyer B K 2002 Appl. Phys. Lett. 80 1909
[15] Bundesmann C, Ashkenov N, Schubert M, Spemann D, Butz T, Kaidashev E M, Lorenz M, Grundmann M 2003 Appl. Phys. Lett. 83 1974
[16] Wang J B, Zhong H M, Li Z F, Lu W 2006 Appl. Phys. Lett. 88 101913
[17] Zang H, Wang Z G, Wei K F, Sun J R, Yao C F, Shen T L, Ma Y Z, Yang C S, Pang L L, Zhu Y B 2010 Nuclear Physics Review 27 87(in Chinese)[臧 航、王志光、魏孔芳、孙建荣、姚存峰、申铁龙、马艺准、杨成绍、庞立龙、朱亚斌 2010 原子核物理评论 27 87]
[18] Damen T C, Porto S P S, Tell B 1966 Phys. Rev. 142 570
[19] Kennedy J, Sundrakannan B, Katiyar R S, Markwitz A, Li Z, Gao W 2008 Current Appl. Phys. 8 291
[20] Liu X J, Song C, Zeng F, Pan F 2008 Thin Solid Films 516 8757
[21] Du C L, Gu Z B, Lu M H, Wang J, Zhang S T, Zhao J, Cheng G X, Heng H, Chen Y F 2006 J. Appl. Phys. 99 123515
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