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在室温下，采用射频磁控溅射法制备了Cu/TiOx纳米晶复合薄膜.利用X射线粉末衍射（XRD）、X射线光电子能谱（XPS）对其结构进行表征，并研究了Cu/TiOx复合薄膜的UV-vis吸收谱和亲水性.结果表明，退火前后薄膜中钛元素皆以Ti3+形式存在.薄膜在可见区有吸收，吸收限为600 nm左右.Cu/TiOx复合薄膜具有良好的亲水性.这主要是由于Cu的掺杂，使得薄膜的性能的亲水性变好.
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关键词:
- Cu/TiOx复合薄膜 /
- 射频磁控溅射 /
- XPS /
- 亲水性
Cu/TiOx composite films have been deposited by RF magnetron sputtering at room temperature. The chemical components and structures of the Cu/TiOx composite films have been characterized by X-ray diffractometer (XRD), X-ray photoelectron spectroscopy (XPS), UV-vis spectroscopy and water contact angel measurement. It is found that the titanium presents in the form of Ti3+ before and after annealing. The results of UV-vis spectroscopy show the visible light absorption features of Cu/TiOx composite films with the absorption edge at about 600 nm. Contact angle results indicate that the Cu/TiOx films are hydrophilic, which is attributed to the added Cu.-
Keywords:
- Cu/TiOx composite films /
- RF magnetron sputtering /
- X-ray potoelectron spectroscopy /
- hydrophilicity
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[16] ］Wang D Y, Lin H C, Yen C C 2006 Thin Solid Films 515 1047
[17] ］Geng X H, Sun J, Sun F H, Wang G H, Wei C C, Xiong S Z, Xu S Z, Yue Q, Zhang X D, Zhao Y 2009 Acta Phys.Sin. 58 1293 ( in Chinese ) ［耿新华、孙建、孙福河、王光红、魏长春、熊绍珍、许盛之、岳强、张晓丹、赵颖 2009 58 1293］
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[20] ］Ji F, Ma J, Ma H L, Wang Y H,Yu X H, Zhang X J 2005 Acta Phys.Sin. 54 1731 ( in Chinese ) ［计峰、马瑾、马洪磊、王玉恒、余旭浒、张锡健 2005 54 1731］
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[22] ］Hou D L, Zhao R B, Meng H J, Jia L Y, Ye X J, Zhou H J, Li X L 2008 Thin Solid Films 516 3223
[23] ］Wang D Y, Lin H C, Yen C C 2006 Thin Solid Films 515 1047
[24] ］Sanjines R, Tang H, Berger H, Gozzo F, Margaritondo G, Levy F 1994 J. Appl. Phys. 75 2945
[25] ］Liang Y J, Che M C 1993 The Handbook of Inorganic Thermodynamics (1st ed) (Shenyang: Northeasten University Press) p379 ［梁英教、车荫昌 1993 无机物热力学数据手册 (第一版)（沈阳：东北大学出版社）第379页］
[26] ］Lee H J, Hahn S H, Kim E J, You Y Z 2004 J. Mater. Sci. 39 3683
[27] ］Zhang Y, Wang S T, Li X B, Chen L Y, Qian Y T, Zhang Z D 2006 J. Crystal Growth 291 196
[28] ］Xu Y Y, Chen D R, Jiao X. L 2005 J. Phys. Chem. 109 13561
[29] ］Zhang L L, Liu P Y, Zhong F, Zuo L, Sun W D 2005 J. Vac. Sci. Technol. 25 259 ( in Chinese ) ［张丽丽、刘彭义、仲飞、翟琳、孙汪典 2005 真空科学与技术学报 25 259］
[30] ］Sakai N, Wang R, Fujishima A, Watanabe T, Hashimoto K 1998 Langmuir 14 5918
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[1] ［1］Park D R, Zhang J, Ikeue K, Yamashita H, Anpo M 1999 J. Catal. 185 114
[2] ［2］Francois M, Danglot J, Grimbert B, Mounaix P, Muller M, Vanbe-sien O, Lippens D 2002 Microelectron. Eng. 61 537
[3] ［3］Hagfeldt A, Graetzel M 1995 Chem. Rev. 95 49
[4] ［4］Li Y, Sun S, Ma M, Ouyang Y, Yan W 2008 Chem. Eng. J. 142 147
[5] ［5］Sunada K, Watanabe T, Hashimoto K 2003 Environ. Sci. Technol. 37 4785
[6] ［6］Ollis D F, Pelizzetti E, Serpone N 1991 Environ. Sci. Technol. 25 1522
[7] ［7］Lee D, Rubner M F, Cohen R E 2006 Nano Lett. 6 2305
[8] ［8］Liu Y Y, Qian L Q, Gou C, Jia X, Wang J W, Tang W H 2009 J. Alloys Compd. 479 532
[9] ［9］Jian J K, Li Q, Sun Y F, Zheng Y F, Zhou X L 2008 Acta Phys.Sin. 57 3880 ( in Chinese ) ［简基康、李茜、孙言飞、郑毓峰、周向玲 2008 57 3880］
[10] ］Young C, Lim T M, Chiang K, Scott J, Amal R 2008 Appl. Catal. B: Environ. 78 1
[11] ］Paramasivam I, Macak J M, Schmuki P 2008 Electrochem. Commun. 10 71
[12] ］Kontapakdee K, Panpranot J, Praserthdam P 2007 Catal. Commun. 8 2166
[13] ］Patil S R, tangar U L, Gross S, Schubert U 2008 J. Adv. Oxid. Technol. 11 327
[14] ］Meng F M, Sun Z Q 2009 Appl. Sur. Sci. 255 6715
[15] ］Ashkaarran A A, Mohammadizadeh M R 2007 Eur. Phys. J. Appl. Phys. 40 155
[16] ］Wang D Y, Lin H C, Yen C C 2006 Thin Solid Films 515 1047
[17] ］Geng X H, Sun J, Sun F H, Wang G H, Wei C C, Xiong S Z, Xu S Z, Yue Q, Zhang X D, Zhao Y 2009 Acta Phys.Sin. 58 1293 ( in Chinese ) ［耿新华、孙建、孙福河、王光红、魏长春、熊绍珍、许盛之、岳强、张晓丹、赵颖 2009 58 1293］
[18] ］Sirghi L, Nakamura M, Hatanaka Y, Takai O 2001 Langmuir 17 8199
[19] ］Shen J, Wo S T, Cui X L, Cai Z W, Yang X L, Zhang Z J 2004 Acta Phys. -Chim. Sin. 20 1191 (in Chinese) ［沈杰、沃松涛、崔晓莉、蔡臻炜、杨锡良、章壮健 2004 物理化学学报 20 1191］
[20] ］Ji F, Ma J, Ma H L, Wang Y H,Yu X H, Zhang X J 2005 Acta Phys.Sin. 54 1731 ( in Chinese ) ［计峰、马瑾、马洪磊、王玉恒、余旭浒、张锡健 2005 54 1731］
[21] ］Liu S H, Wang D H, Pan C H 1988 X-ray Photoelectron Spectroscopy (1st ed) ( Beijing: Science Press ) p47 ( in Chinese ) ［刘世宏、王当憨、潘承璜 1988 X-射线光电子能谱分析 (第一版) (北京:科学出版社) 第47页］
[22] ］Hou D L, Zhao R B, Meng H J, Jia L Y, Ye X J, Zhou H J, Li X L 2008 Thin Solid Films 516 3223
[23] ］Wang D Y, Lin H C, Yen C C 2006 Thin Solid Films 515 1047
[24] ］Sanjines R, Tang H, Berger H, Gozzo F, Margaritondo G, Levy F 1994 J. Appl. Phys. 75 2945
[25] ］Liang Y J, Che M C 1993 The Handbook of Inorganic Thermodynamics (1st ed) (Shenyang: Northeasten University Press) p379 ［梁英教、车荫昌 1993 无机物热力学数据手册 (第一版)（沈阳：东北大学出版社）第379页］
[26] ］Lee H J, Hahn S H, Kim E J, You Y Z 2004 J. Mater. Sci. 39 3683
[27] ］Zhang Y, Wang S T, Li X B, Chen L Y, Qian Y T, Zhang Z D 2006 J. Crystal Growth 291 196
[28] ］Xu Y Y, Chen D R, Jiao X. L 2005 J. Phys. Chem. 109 13561
[29] ］Zhang L L, Liu P Y, Zhong F, Zuo L, Sun W D 2005 J. Vac. Sci. Technol. 25 259 ( in Chinese ) ［张丽丽、刘彭义、仲飞、翟琳、孙汪典 2005 真空科学与技术学报 25 259］
[30] ］Sakai N, Wang R, Fujishima A, Watanabe T, Hashimoto K 1998 Langmuir 14 5918
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