We describe a new technique for MeV heavy-ion backscattering analysis of trace heavy elements on the surface and near surface. Pulse pileup problems are eliminated by choice of incidence ion mass M1, which is the same as or larger then that of bulk atom M2. Using 3 MeV Si beam, we could measure quantities of arsenic implanted in silicon down to 2×1012 atoms/cm2. Experimental results also show that sensitivity for impurity element on silicon substrate is as high as 2.2 ×109 atoms/cm2 for Au.