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利用透射扫描电子显微镜和X射线能谱仪,在入射电压V0为40,80,100,120,160和200kV下,测定了从Ge到Sn八种元素薄膜的标识X射线强度比值I(L)/I(K),并结合Cliff-LorimerkXSi因子和它的内插值,扩充了目前仅有的少数几个L系的Cliff-Lorimer因子。为了确定哪个电离截面Q公式最好,比较了利用九种不同Q公式计算出的I(L)/I(K)和我们的实验值I(L)/I(K)。发现两者之间存在着很大的差别。进一步考虑计算强度公式中各物理参量引起的误差后,我们认为上述差别主要来源于不准确的Q公式,而且和实验值符合最好的Fabredela Ripelle的电离截面也需要进行修正。利用我们修正后的Q公式,在V0为100和200kV下,分析了几种已知成分的样品并和EDAX的分析结果进行了比较。结果表明:在不同电压下,利用不同线系K—K,K—L,我们分析结果的误差有显著的降低。The intensity ratios I(L)/I(K) of eight kinds of pure element's thin films from Ge to Sn have been measured in a TEM using X-ray EDS at 40, 80, 100, 120,160 and 200 kV. Using these I(L)/I(K) values, the Cliff-Lorimer factor KXSi and their interpolated values for the K lines, the KXSi values for L lines are obtained. In order to determine which Q ionization cross-section formula in literature is the best, the calculated values I(L)/I(K) using nine formulas of Q were compared with expermental data. It has been found that there are large discrepancies between the expermental data and calculated values. After considering the errors by various parameters used in calculation, it becomes evident that the discrepancy is mainly caused by inaccuacy of cross-section and the best formula of Q proposed by Fabre de la Ripelle must also be revised. The quantitative analysis for several specimens with known composition was done using our revised Q and EDAX-9100's progroms. The results snow that by using our revised formula of Q, the errors of analytical results from K-K and K-L lines at 100 and 200 kV could be reduced significantly.
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