-
本文给出一张既能考虑A-15结构型变,又能描述A-15型化合物Tc(超导临界温度)变化规律的图。从而预言:所述A-15系列中大概不会存在Tc很高(>25K)的化合物;铌系列中Nb3Ge的Tc可能是最高的;钒系列中Tc可望还能提高(>17.1K),V3Ge可望提高到12K以上。检查Nb3Si,得不到Geller那样的乐观估计,并认为:以新工艺得到的A-15相Nb3Si,是以牺牲正当化学配比或改变正常原子体积为代价而获得的非理想结构。从Tc与半径比关系及理想A-15结构对半径比的要求来看,笔者认为文献上关于Nb3Si在有较高Tc(>23K)的种种预言,都是缺乏充分依据而不足置信的。A diagram which not only considers the transition of the structural type hut also describes the rule of change of Tc in the A-15 compounds is given in this paper. From this diagram it can be seen that compounds with very high Tc(>25K) are not likely to exist in the A-15 series considered. In the Nb series, Nb3Ge probably has the highest Tc; in V series, the Tc can still be expected to be raised (>17.1K), the Tc of V3Ge is likely to be raised to above 12 K. Examining the case of Nb3Si, one can not get the optimistic estimation as that of Geller. It is considered that Nb3Si of A-15 type obtained by present new technology is a non-ideal structure formed at the expense of the normal stoichiometric ratio or by a change of the ordinary atomic volume. On the basis of the relationship between Tc and radii ratio and on consideration of the radii ratio required by the ideal A-15 structure, the point of view presented in this paper does not agree with the various predictions that the Nb3Si might have a high Tc(>23 K).
[1] -
[1]
计量
- 文章访问数: 6796
- PDF下载量: 535
- 被引次数: 0