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光致发光光谱能够揭示半导体材料带隙、杂质能级等电子结构信息，还可分析界面、载流子寿命、量子效率，在紫外-近红外波段得到广泛应用.在约4 m以长红外波段，由于热背景干扰强、光致发光信号弱、探测能力低，光致发光光谱研究长期受限.本文介绍了利用傅里叶变换光谱仪测量光致发光光谱的常规方法，简述了为突破红外波段困境于1989年提出、历经20多年发展的连续扫描傅里叶变换双调制光致发光光谱方法及所受机理局限；分析了2006年报道的基于步进扫描傅里叶变换光谱仪的红外调制光致发光光谱方法的抗干扰、灵敏度、信噪比优势，例举了国际上诸多研究组对红外调制光致发光光谱方法有效性的例证和以此取得的应用研究进展；总结了近年来宽波段、高通量扫描成像和空间微区分辨红外调制光致发光光谱测试方法发展以及从0.56-20 m可见-远红外宽波段覆盖到千级通道光谱高通量检测、2-3 m微区分辨红外调制光致发光光谱技术进步，列举了应用研究稀氮/稀铋量子阱、HgCdTe外延膜、InAs/GaSb超晶格等可见-远红外半导体材料阶段结果和合作研究典型进展.论文展现了红外调制光致发光光谱方法先进性和宽波段、高通量扫描成像与空间微区分辨光谱测试方法有效性，预见了未来进一步应用研究方向.
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关键词:
- 光致发光 /
- 傅里叶变换红外光谱仪 /
- 步进扫描 /
- 半导体
Photoluminescence (PL) spectroscopy has been widely used in the ultraviolet-near-infrared spectral range for over seventy years since the very early report in 1950’s, because it not only reveals the electronic structure information of, e.g., band gap and impurity energy levels of semiconductor materials, but also serves as an efficient tool for analyzing interfacial structures, carrier lifetime, and quantum efficiency. In the infrared band beyond about 4 μm, however, the study of PL spectroscopy had been limited for decades long due to strong thermal background interference, weak PL signal and low detection ability. In this review, a conventional PL method is introduced based on a Fourier transform infrared (FTIR) spectrometer, and a continuous-scan FTIR spectrometer-based double-modulation PL (csFTIR-DMPL) method is briefly described that was proposed in 1989 for breaking through the dilemma of the infrared band, and developed continuously in the later more than 20 years, with its limitations emphasized. Then, a step-scan FTIR spectrometer-based infrared modulated PL (ssFTIR-MPL) method reported in 2006 is analyzed with highlights on its advantages of anti-interference, sensitivity and signal-to-noise ratio, followed by enumerating its effectiveness demonstration and application progress in many research groups worldwide. Further developments in recent years are then summarized of wide-band, high-throughput scanning imaging and spatial micro-resolution infrared modulated PL spectroscopic experimental systems, and the technological progresses are demonstrated of infrared-modulated PL spectroscopy from 0.56-20 μm visible-far-infrared broadband coverage to > 1k high-throughput spectra imaging and ≤2-3 μm spatial micro-resolution. Typical achievements of collaborative research are enumerated in the visible-far-infrared semiconductor materials of dilute nitrogen/dilute bismuth quantum wells, HgCdTe epitaxial films, and InAs/GaSb superlattices. The results presented demonstrate the advancement of infrared modulated PL spectroscopy and the effectiveness of the experimental systems, and foresee further application and development in the future. -
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