基于人工表面等离激元的小型化电可调缺口带滤波器

孙淑鹏; 程用志; 罗辉; 陈浮; 杨玲玲; 李享成

doi:10.7498/aps.73.20231447

摘要

具有小型化的缺口带滤波器在微波集成系统中具有广泛的应用前景. 本文基于倒山形单元的人工表面等离激元(spoof surface plasmon polariton, SSPP)提出了一种新型小型化电可调缺口带滤波器. 与相同横向尺寸的传统SSPP单元相比, 所提出的倒山形单元的色散曲线表现出更好的慢波特性, 渐近频率降低至原来的55%. 缺口带的频率可通过调整变容二极管两端的偏置电压来动态控制. 随着偏置电压从0.5 V增至30 V, 缺口带频率从2.1 GHz移动到2.3 GHz, 实现动态调节. 仿真结果表明, 缺口带滤波器通带内实现了较低的插入损耗(S₂₁ < –1 dB)和良好的回波损耗(S₁₁ > –10 dB), 并且具有小型化的优势, 尺寸仅为0.78λ_g × 0.35λ_g, λ_g是中心频率处的波长. 采用印刷电路板技术实际加工了缺口带滤波器. 实物测量和仿真结果吻合较好, 验证了设计的可靠性.

关键词:

Abstract

In this paper, a novel miniaturized electronical controlled notch band filter based on spoof surface plasmon polaritons (SSPPs) with inverted “山”-shaped unit is designed and experimentally demonstrated. The notch band filter is mainly composed of four parts: microstrip transmission line, transition structure, inverted “山”-shaped SSPPs, and split ring resonator (SRR) structure, and a varactor diode is embedded in the slit notch of the SRR structure to realize electronic control. Comparing with the traditional SSPP unit with the same lateral size, the dispersion curve of the proposed inverted “山”-shaped unit shows better slow wave characteristics, and the asymptotic frequency is reduced to 55%. The frequency of the notch band can be dynamically controlled by adjusting the external bias voltage at both ends of the varactor diode. As the external bias voltage increases from 0.5 V to 30 V, the notch band frequency can be changed from 2.1 GHz to 2.3 GHz and achieve easily electronic regulation. The simulation results show that the notched band filter achieves low insertion loss (S₂₁ < –1 dB) and great return loss (S₁₁ > –10 dB) in the pass band, which has the advantage of miniaturization with the size only 0.78λ_g × 0.35λ_g. It is worth noting that when the equivalent capacitance of the slit notch is changed, the transmission coefficient of the notched band is always less than –15 dB, showing superior band-stop performance. At the same time, by comparing and analyzing the electric field distribution of notch band filter, the transmission mechanism of microwave signal is further verified. In order to verify the its effectiveness, the traditional printed circuit board technology is used to fabricate notch band filter. The measurement results are in good agreement with the simulation ones, verifying the feasibility of the design. The electronically controlled notch band filter has higher integration and can effectively suppress the interference frequency band.

Keywords:

作者及机构信息

1.
武汉科技大学信息科学与工程学院, 武汉　430081

2.
武汉科技大学, 耐火材料与冶金国家重点实验室, 武汉　430081

3.
武汉软件工程职业学院电子工程学院, 武汉　430205

4.
湖北隆中实验室, 襄阳　441000

通信作者: 程用志, chengyz@wust.edu.cn ; 李享成, lixiangcheng@wust.edu.cn

基金项目: 国家自然科学基金(批准号: 52304410, 51972242)、湖北省自然科学基金创新群体项目(批准号: 2020CFA038)、湖北省重点研发计划(批准号: 2020BAA028)、湖北省重大项目(批准号: 2023BAA003)和湖北省青年拔尖人才培养计划资助的课题.

Authors and contacts

1.
School of Information Science and Engineering, Wuhan University of Science and Technology, Wuhan 430081, China

2.
State Key Laboratory of Refractory Materials and Metallurgy, Wuhan University of Science and Technology, Wuhan 430081, China

3.
School of Electronic Engineering, Wuhan Software Engineering Vocational College, Wuhan 430205, China

4.
Hubei Longzhong Laboratory, Xiangyang 441000, China

Corresponding author: Cheng Yong-Zhi, chengyz@wust.edu.cn ; Li Xiang-Cheng, lixiangcheng@wust.edu.cn

Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 52304410, 51972242), the Science Fund for Creative Research Groups of the National Natural Science Foundation of Hubei Province, China (Grant No. 2020CFA038), the Key Research and Development Project of Hubei Province, China (Grant No. 2020BAA028), the Major Program of Hubei Province, China (Grant No. 2023BAA003), and the Young Top-notch Talent Cultivation Program of Hubei Province, China.

文章全文 : translate this paragraph

参考文献

[1]	Bi X K, Zhang X, Huang G L, Yuan T 2019 IEEE Access 7 49169 Google Scholar
[2]	Pendry J B, Martin-Moreno L, Garcia-Vidal F J 2004 Science 305 847 Google Scholar
[3]	Liao Z, Zhao J, Pan B C 2014 Appl. Phys. 47 315103 Google Scholar
[4]	Sun S P, Cheng Y Z, Luo H, Chen F, Li X C 2023 Plasmonics 18 165 Google Scholar
[5]	Li X P, Zhang J X, Yang H L, Xi X L 2022 J. Electron. Inf. Technol. 44 1327 [李绪平, 张佳翔, 杨海龙, 席晓莉 2022 电子与信息学报 44 1327]Google Scholar Li X P, Zhang J X, Yang H L, Xi X L 2022 J. Electron. Inf. Technol. 44 1327 Google Scholar
[6]	孙淑鹏, 程用志, 罗辉, 陈浮, 李享成 2023 72 064101 Google Scholar Sun S P, Cheng Y Z, Luo H, Chen F, Li X C 2023 Acta Phys. Sin. 72 064101 Google Scholar
[7]	朱华利, 张勇, 叶龙芳 2022 光学学报 42 1523001 Google Scholar Zhu H L, Zhang Y, Ye L F 2022 Acta Opt. Sin. 42 1523001 Google Scholar
[8]	Chen P, Li L, Yang K, Chen Q 2018 IEEE Microw. Wirel. Co. 28 984 Google Scholar
[9]	罗宇轩, 程用志, 陈浮, 罗辉, 李享成 2023 72 044101 Google Scholar Luo Y X, Cheng Y Z, Chen F, Luo H, Li X C 2023 Acta Phys. Sin 72 044101 Google Scholar
[10]	朱登玮, 曾瑞敏, 唐泽恬, 丁召, 杨晨 2020 激光与光电子学进展 57 172401 Google Scholar Zhu D W, Zeng R M, Tang Z T, Ding Z, Yang C 2020 Laser Optoelectron. Prog. 57 172401 Google Scholar
[11]	Sangam R S, Kshetrimayum R S 2021 IET Microw. Antennas Propag. 15 289 Google Scholar
[12]	Wang J, Zhao L, Hao Z C, Shen X P, Cui T J 2019 Optics Letters 44 3374 Google Scholar
[13]	Kianinejad A, Chen Z N, Qiu C W 2015 IEEE T. Microw. Theory. 63 1817 Google Scholar
[14]	Yin J Y, Ren J, Zhang Q, Zhang H C, Liu Y Q, Li Y B, Wan X, Cui T J 2016 IEEE T. Antenn. Propag. 64 5181 Google Scholar
[15]	Wang Z X, Zhang H C, Lu J Y 2019 J. Phys. D Appl. Phys. 52 025107 Google Scholar
[16]	Ye L F, Chen Z K, Zhang Y 2022 IEEE T. Circuits-II 70 1445 Google Scholar
[17]	Xu J, Zhang H C, Tang W X 2016 Appl. Phys. Lett. 108 191906 Google Scholar
[18]	Lin H, Yu J B, Xiao B G 2023 J. Phys. B 56 075401 Google Scholar
[19]	Liu H, Wang Z, Zhang Q, Ma H 2019 IEEE Access 7 44212 Google Scholar
[20]	Jiang T, Shen L, Zhang X 2009 Prog. Electromagn. Res. 8 91 Google Scholar

施引文献

图 1 (a)矩形、T形、开口环形和倒山形SSPP 结构; (b)色散曲线的比较

Fig. 1. (a) Rectangular, T-shaped, split-ring shaped, inverted “山”-shaped SSPP structure; (b) comparison of dispersion curves.

下载: 全尺寸图片幻灯片

图 2 (a) SSPP波导示意图; (b) 对应的等效LC电路; (c)电磁和等效LC电路仿真S参数(S₁₁和 S₂₁)

Fig. 2. (a) Schematic of the SSPP waveguide; (b) the corresponding equivalent LC circuit model; (c) the comparisons of S-parameters (S₁₁ and S₂₁) from EM and equivalent LC circuit simulations.

下载: 全尺寸图片幻灯片

图 3 (a)电可调缺口带滤波器示意图; (b) 对应的等效LC电路; (c)电磁和等效LC电路仿真得到的S参数(S₁₁和S₂₁); (d)电磁仿真得到的S参数(S₁₁和S₂₁)相位

Fig. 3. (a) Schematic diagram of an electrically adjustable notched band filter; (b) the corresponding equivalent LC circuit model; (c) comparisons of S-parameters (S₁₁ and S₂₁) from EM and equivalent LC circuit simulations; (d) the phases of S-parameters (S₁₁ and S₂₁) from EM simulation.

下载: 全尺寸图片幻灯片

图 4 缺口带滤波器的LC等效电路传输系数随等效电容的变化

Fig. 4. Transmission coefficient of the notched band filter as a function of equivalent capacitance.

下载: 全尺寸图片幻灯片

图 5 1.5 GHz, 2.25 GHz和5.0 GHz处的z分量电场分布

Fig. 5. z-component electric field distribution at 1.5 GHz, 2.25 GHz and 5.0 GHz.

下载: 全尺寸图片幻灯片

图 6 (a)电可调缺口带滤波器的实物图; (b)—(d)模拟和实测的S参数对比曲线.

Fig. 6. (a) Physical plot of electrically adjustable notched band filter; (b)–(d) the comparison curves of simulated and measured S-parameters.

下载: 全尺寸图片幻灯片

表 1 与参考文献中滤波器的性能对比

Table 1. Comparison with filters in references.

参考文献	频率范围	插入损耗	电可调	尺寸(λ_g×λ_g)
[5]	0—12.5	0.9	否	0.98×0.17
[8]	7.3—11.2	2	否	2.85×0.67
[9]	1.49—3.63	2.5	否	1.17×0.64
[10]	0—7.1	3	否	2.45×0.47
[11]	8—13.5	2	否	1.87×0.63
[17]	6.4—10.2	1.5	是	3.70×0.94
本文	0—3.7	1	是	0.78×0.35

下载: 导出CSV

map

[1]	Bi X K, Zhang X, Huang G L, Yuan T 2019 IEEE Access 7 49169 Google Scholar
[2]	Pendry J B, Martin-Moreno L, Garcia-Vidal F J 2004 Science 305 847 Google Scholar
[3]	Liao Z, Zhao J, Pan B C 2014 Appl. Phys. 47 315103 Google Scholar
[4]	Sun S P, Cheng Y Z, Luo H, Chen F, Li X C 2023 Plasmonics 18 165 Google Scholar
[5]	Li X P, Zhang J X, Yang H L, Xi X L 2022 J. Electron. Inf. Technol. 44 1327 [李绪平, 张佳翔, 杨海龙, 席晓莉 2022 电子与信息学报 44 1327]Google Scholar Li X P, Zhang J X, Yang H L, Xi X L 2022 J. Electron. Inf. Technol. 44 1327 Google Scholar
[6]	孙淑鹏, 程用志, 罗辉, 陈浮, 李享成 2023 72 064101 Google Scholar Sun S P, Cheng Y Z, Luo H, Chen F, Li X C 2023 Acta Phys. Sin. 72 064101 Google Scholar
[7]	朱华利, 张勇, 叶龙芳 2022 光学学报 42 1523001 Google Scholar Zhu H L, Zhang Y, Ye L F 2022 Acta Opt. Sin. 42 1523001 Google Scholar
[8]	Chen P, Li L, Yang K, Chen Q 2018 IEEE Microw. Wirel. Co. 28 984 Google Scholar
[9]	罗宇轩, 程用志, 陈浮, 罗辉, 李享成 2023 72 044101 Google Scholar Luo Y X, Cheng Y Z, Chen F, Luo H, Li X C 2023 Acta Phys. Sin 72 044101 Google Scholar
[10]	朱登玮, 曾瑞敏, 唐泽恬, 丁召, 杨晨 2020 激光与光电子学进展 57 172401 Google Scholar Zhu D W, Zeng R M, Tang Z T, Ding Z, Yang C 2020 Laser Optoelectron. Prog. 57 172401 Google Scholar
[11]	Sangam R S, Kshetrimayum R S 2021 IET Microw. Antennas Propag. 15 289 Google Scholar
[12]	Wang J, Zhao L, Hao Z C, Shen X P, Cui T J 2019 Optics Letters 44 3374 Google Scholar
[13]	Kianinejad A, Chen Z N, Qiu C W 2015 IEEE T. Microw. Theory. 63 1817 Google Scholar
[14]	Yin J Y, Ren J, Zhang Q, Zhang H C, Liu Y Q, Li Y B, Wan X, Cui T J 2016 IEEE T. Antenn. Propag. 64 5181 Google Scholar
[15]	Wang Z X, Zhang H C, Lu J Y 2019 J. Phys. D Appl. Phys. 52 025107 Google Scholar
[16]	Ye L F, Chen Z K, Zhang Y 2022 IEEE T. Circuits-II 70 1445 Google Scholar
[17]	Xu J, Zhang H C, Tang W X 2016 Appl. Phys. Lett. 108 191906 Google Scholar
[18]	Lin H, Yu J B, Xiao B G 2023 J. Phys. B 56 075401 Google Scholar
[19]	Liu H, Wang Z, Zhang Q, Ma H 2019 IEEE Access 7 44212 Google Scholar
[20]	Jiang T, Shen L, Zhang X 2009 Prog. Electromagn. Res. 8 91 Google Scholar

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