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鉴于国内核物理实验对高性能硅探测器有大量需求, 而国外对中国进行技术封锁, 满足实验需求的高性能探测器不易获得. 中国科学院近代物理研究所在原有制备工艺基础上首次采用套刻技术, 有效减少了光刻及腐蚀过程造成的SiO2沾污, 大幅提高了探测器性能和成品率. 本文对采用该工艺研制的300 μm厚, 有效面积50 mm×50 mm硅探测器进行电学性能测试和在束探测性能测试. 探测器在–45 V耗尽电压下, 其漏电流小于40 nA, 对5 MeV左右的α粒子的能量分辨(σ)约为45 keV. 将该探测器作为能量沉积(ΔE)探测器, 利用250 MeV/u的11C放射性束流及其在次级碳靶上的反应产物对探测器进行了探测性能测试. 测试结果显示, 该探测器对于C元素的电荷数Z的分辨为0.17, 与文献中记录的国外生产的同类型探测器的实验数据(Z分辨0.19)相当, 可以满足中高能放射性束实验对轻质量区粒子鉴别的要求.In view of the great demand for large-area silicon detectors in domestic nuclear physics experiments, a type of 300-μm-thick high-performance square silicon detector with a large active area of 50 mm×50 mm by using overprinting technology is developed in the Institute of Modern Physics of the Chinese Academy of Sciences. Based on this technology, SiO2 contamination caused by the photolithography and corrosion processes is effectively reduced. The detector has an excellent performance with a yield of up to 80%. Under –45 V (depletion voltage) bias, the leakage current of the detector is less than 40 nA. The detector is tested with a three-component α radioactive source. The energy resolution (σ) is about 45 keV for 5-MeV α particles. Used as an energy deposition(ΔE) detector, the detector performance is also tested for measuring reaction products of 250 MeV/u 11C radioactive beams impinging on a carbon target. The results show that the charge number resolution of a single silicon detector is 0.17 for the carbon isotope, which is similar to that measured with the same type of detectors available from the market. With the average deposition energy of three silicon detectors used, the charge number resolution for carbon isotope reaches a better value of 0.11. With this resolution, C and B isotopes are clearly distinguished, meeting the requirements for particle identification in intermediate- and high-energy radioactive beam experiments.
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Yang F D, Hao X Y, Zhao J B, Zhang X Y, He G K 2019 Chinese Patent CN201811621988.8 (in Chinese)
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图 1 (a)探测器p+-n-n+结构示意图; (b)封装好的探测器实物图
Fig. 1. (a) Schematic diagram of p+-n-n+ structure of detector; (b) picture of silicon detector assembled in a readout board.
图 2 (a)显微镜下SiO2沾污照片; (b)补刻版示意图
Fig. 2. (a) Photos of SiO2 contamination under microscope; (b) schematic diagram of supplementary photomask.
图 3 探测器的C-V特性曲线(a)和I-V特性曲线(b)
Fig. 3. (a) C-V characteristic curves and (b) I-V characteristic curves of detector.
图 6 Si1—Si3探测器的三组分α源测试能谱
Fig. 6. Energy spectra for Si1–Si3 detectors measuring three component α source.
图 7 (a)—(c)分别为250 MeV/u的 11C打靶后在Si1—Si3探测器上的沉积能量分布; (d)为Si1—Si3沉积能量加和求平均后的分布(所有能谱已标定)
Fig. 7. (a)–(c) Spectra for the energy deposition on Si1–Si3 detectors for 250 MeV/u 11C reaction products after the target; (d) spectrum for the average energy deposition on Si1–Si3 detectors for 250 MeV/u 11C reaction products after the target (the above spectra are already calibrated).
图 8 有靶(蓝色)和空靶(红色)情况下250 MeV/u的11C 在Si1—Si3探测器上沉积能量加和平均后的分布
Fig. 8. Spectrum for the average energy deposition on Si1–Si3 detectors for 250 MeV/u 11C with target (blue) and without target (red).
图 9 250 MeV/u的11C打靶后在Si1—Si3探测器沉积能量的二维关联图
Fig. 9. Two-dimensional correlation spectrum for the energy deposition on Si1–Si3 detectors for 250 MeV/u 11C with target.
图 10 (a)—(c)基于250 MeV/u的11C打靶后在Si1—Si3探测器沉积的能量得到的粒子电荷数Z的分布; (d) Si1—Si3探测器沉积能量加和平均后得到的粒子电荷数Z的分布图(已刻度)
Fig. 10. (a)–(c) Distribution of atomic number Z deduced from the energy deposition on Si1–Si3 detectors for 250 MeV/u 11C reaction products after target; (d) distribution of atomic number Z deduced from the average value of the energy deposition on Si1–Si3 detectors (calibrated)
图 11 有靶(蓝色)和空靶(红色)情况下250 MeV/u的11C 在Si1—Si3探测器上的Z鉴别图
Fig. 11. Distribution of atomic number Z for 250 MeV/u 11C on Si1–Si3 detectors with target (blue) and empty target (red).
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[1] Tanihata I 2016 Eur. Phys. J. Plus 131 90
Google Scholar
[2] Nakamura T, Sakurai H, Watanabe H 2017 Prog. Part. Nucl. Phys. 97 53
Google Scholar
[3] 崔保群, 唐兵, 马鹰俊, 马瑞刚, 陈立华, 黄青华, 马燮 2019 原子能科学技术 53 1572
Google Scholar
Cui B Q, Tang B, Ma Y J, Ma R G, Chen L H, Huang Q H, Ma X 2019 Atom. Ener. Sci. Tech. 53 1572
Google Scholar
[4] 曾晟, 柳卫平, 叶沿林, 北京ISOL团队 2019 原子能科学技术 53 2321
Google Scholar
Zeng S, Liu W P, Ye Y L, Bei Jing ISOL team 2019 Atom. Ener. Sci. Tech. 53 2321
Google Scholar
[5] Sun Z, Zhan W L, Guo Z Y, Xiao G, Li J X 2003 Nucl. Instrum. Meth. A 503 496
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[6] Zhan W L, Xu H S, Xiao G Q, Xia J W, Yuan Y J, HIRFL-CSR Group 2010 Nucl. Phys. A 834 694c
Google Scholar
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[9] Li R, Wang X, Li H, Chen C, Zu K, Hu R, Zhao C, Li Z 2019 JINST 14 C05020
Google Scholar
[10] 邹鸿, 陈鸿飞, 邹积清, 宁宝俊, 施伟红, 田大宇, 张录 2007 核电子学与探测技术 27 170
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Zou H, Chen H F, Zou J Q, Ning B J, Shi W H, Tian D Y, Zhang L 2007 Nucl. Elec. and Det. Tech. 27 170
Google Scholar
[11] Bao P F, Lin C J, Yang F, Guo Z Q, Guo T S, Yang L, Sun L J, Jia H M, Xu X X, Ma N R, Zhang H Q, Liu Z H 2014 Chin. Phys. C 38 126001
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[12] 孟祥承 2003 核电子学与探测技术 23 4
Google Scholar
Meng X C 2003 Nucl. Elec. and Det. Tech. 23 4
Google Scholar
[13] 谢一冈, 陈昌, 王曼, 吕军光, 孟祥承, 王锋, 顾树棣, 过雅南 2003粒子探测器与数据获取 (北京: 科学出版社) 第230页
Xie Y G, Chen C, Wang M, Lv J G, Meng X C, Wang F, Gu S D, Guo Y N 2003 Particle Detector and Data Acquisition (Beijing: Science Press) p230 (in Chinese)
[14] 丁洪林 2010 核辐射探测器 (哈尔滨: 哈尔滨工程大学出版社) 第168页
Ding H L 2010 Nuclear Radiation Detector (Harbin: Harbin Engineering University Press) p168 (in Chinese)
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Google Scholar
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Lu X T, Jiang D X, Ye Y L 2000 Nuclear Physics (Beijing: Atomic Energy Press) p82 (in Chinese)
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[22] 杨昉东, 郝晓勇, 赵江滨, 张向阳, 何高魁 2019 中国专利 CN201811621988.8
Yang F D, Hao X Y, Zhao J B, Zhang X Y, He G K 2019 Chinese Patent CN201811621988.8 (in Chinese)
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