InGaAs/AlGaAs量子阱红外探测器中势垒生长温度的研究

霍大云; 石震武; 张伟; 唐沈立; 彭长四

doi:10.7498/aps.66.068501

摘要

InGaAs/AlGaAs量子阱是中波量子阱红外探测器件最常用的材料体系，本文以结构为2.4 nm In0.35Ga0.65As/40 nm Al0.34Ga0.66As的多量子阱材料为研究对象，利用分子束外延生长，固定InGaAs势阱的生长温度（465℃），然后依次升高分别选取465，500，545，580℃生长AlGaAs势垒层，从而获得四个不同的多量子阱样品.通过荧光光谱以及X射线衍射测试系统分析了势垒层生长温度对InGaAs量子阱发光和质量的影响，并较准确地给出了量子阱大致的温致弛豫轨迹：465500℃，开始出现相分离，但缺陷水平较低，属弹性弛豫阶段；500545℃，相分离加剧并伴随缺陷水平的上升，属弹性弛豫向塑性弛豫过渡阶段；545580℃，相分离以及缺陷水平急剧上升，迅速进入塑性弛豫阶段，尤其是580℃时，量子阱的材料质量被严重破坏.

关键词:

Abstract

The InGaAs/AlGaAs quantum wells have been extensively applied to quantum well infrared photodetector of mid-wavelength. In this letter, four samples of 2.4 nm In0.35Ga0.65As/40 nm Al0.34Ga0.66As multi-quantum wells are grown by molecular beam epitaxy with the InGaAs wells growing all at a temperature of 465℃ but the AlGaAs wells growing at temperatures of 465℃, 500℃, 545℃, and 580℃ respectively. The dependence of InGaAs quantum well strain relaxation on the AlGaAs growth temperature is systematically studied by photoluminescence spectroscopy and X-ray diffraction and then the thermal-induced relaxations of three key-stages are clearly observed in the following temperature ranges. 1) 465-500℃ for the stage of elastic relaxation: the phase separation begins to take place with a low defect density; 2) 500-545℃ for the transition stage from elastic relaxation to plastic relaxation: the phase separation will be further intensified with defect density increasing; 3) 545-580℃ for the fast stage dominated by elastic relaxation and the defect density will sharply increase. Especially when AlGaAs temperature increases to 580℃, a very serious plastic relaxation will take place and the InGaAs quantum well will be dramatically destroyed.

Keywords:

作者及机构信息

1.
苏州大学光电信息科学与工程学院/苏州纳米科技协同创新中心, 苏州 215006

通信作者: 石震武, zwshi@suda.edu.cn

基金项目: 国家自然科学基金（批准号：11504251）、江苏高校优势学科建设工程、科技部国际合作项目（批准号：2013DFG12210）、江苏省高校自然科学研究重大项目（批准号：12 KJA140001）和江苏省普通高校研究生科研创新计划（批准号：KYLX15_1252）资助的课题.

Authors and contacts

1.
School of Optoelectronics Information Science and Engineering, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215006, China

Corresponding author: Shi Zhen-Wu, zwshi@suda.edu.cn

Funds: Project supported by the National Natural Science Foundation of China (Grant No. 11504251), the Priority Academic Program Development of Jiangsu Higher Education Institutions (PAPD), China, the International Cooperation Project by MOST, China (Grant No. 2013DFG12210), the Natural Science Research Project of Jiangsu Higher Education, China (Grant No. 12KJA140001), and the Post-graduate Innovation Project of Jiangsu Higher Education, China (Grant No. KYLX15_1252).

参考文献

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[2]	Yuan X Z, Lu W, Li N, Chen X S, Shen X C, Zi J 2003 Acta Phys. Sin. 52 503 (in Chinese) [袁先漳, 陆卫, 李宁, 陈效双, 沈学础, 资剑 2003 52 503]
[3]	Levine B F, Bethea C G, Hasnain G, Shen V O, Pelve E, Abbott R R, Hsieh S J 1990 Appl. Phys. Lett. 56 851
[4]	Lee S C, Krishna, Brueck S R J 2009 Opt. Express 17 23160
[5]	Castellano F, Rossi F, Faist J, Lhuillier E, Berger V 2009 Phys. Rev. B 79 205304
[6]	Levine B F 1993 J. Appl. Phys. 74 R1
[7]	Nedelcu A, Costard E, Bois P, Marcadet X 2007 Infrared Phys. Technol. 50 227
[8]	Li N, Yuan X Z, Li N, Lu W, Li Z F, Dou H F, Shen X C, Jin L, Li H W, Zhou J M, Huang Y 2000 Acta Phys. Sin. 49 797 (in Chinese) [李娜, 袁先漳, 李宁, 陆卫, 李志峰, 窦红飞, 沈学础, 金莉, 李宏伟, 周均铭, 黄绮 2000 49 797]
[9]	Gunapala S, Bandara S, Bock J, Ressler M, Liu J, Mumolo J, Rafol S, Ting D, Wemer M 2002 Aerospace Conference Proceedings Montana, American, March 9-16, pp3-1437
[10]	Choi K K, Jhabvala M D, Sun J, Jhabvala C A, Waczynski A, Olver K 2013 Appl. Phys. Lett. 103 201113
[11]	Costard E, Bois P, de Rossi A, Nedelcu A, Cocle O, Gauthier F H, Audier F 2003 C. R. Phys. 10 1089
[12]	Wang L M, Zhang R, Lin Y N, Xu S L 2008 Infrared Laser Eng. S2 570 (in Chinese) [王力民, 张蕊, 林一楠, 徐世录 2008 红外与激光工程 S2 570]
[13]	Lourenco M A, Homewood K P, Considine L 1994 Mater. Sci. Eng. B 28 507
[14]	Whaley G J, Cohen P I 1990 Appl. Phys. Lett. 57 144
[15]	Sasaki T, Suzuki H, Sai A, Takahasi M, Fujikawa S, Kamiya I, Ohshita Y, Yamaguchi M 2011 J. Cryst. Growth 323 13
[16]	Quillec M, Goldstein L, Roux G L, Burgeat J, Primot J 1984 J. Appl. Phys. 55 2094
[17]	Tanner B K, Parbrook P J, Whitehouse C R, Keir A M, Johnson A D, Jones J, Wallis D, Smith L M, Luun B, Hogg J H C 2001 J. Phys. D: Appl. Phys. 34 A109
[18]	Li Q, Wang G T 2010 Appl. Phys. Lett. 97 181107
[19]	Zhang G, Ovtchinnikov A, Pessa M 1993 J. Cryst. Growth 127 209
[20]	Cho Y H, Gainer G H, Fischer A J, Song J J, Keller S, Mishra U K, DenBaars S P 1998 Appl. Phys. lett. 73 1370
[21]	Shi Z W, Wang L, Zhen H L, Wang W X, Chen H 2013 Nanoscale Res. Lett. 8 310

施引文献

[1]	Levine B F, Choi K K, Bethea C G, Walker J, Malik R J 1987 Appl. Phys. Lett. 50 1092
[2]	Yuan X Z, Lu W, Li N, Chen X S, Shen X C, Zi J 2003 Acta Phys. Sin. 52 503 (in Chinese) [袁先漳, 陆卫, 李宁, 陈效双, 沈学础, 资剑 2003 52 503]
[3]	Levine B F, Bethea C G, Hasnain G, Shen V O, Pelve E, Abbott R R, Hsieh S J 1990 Appl. Phys. Lett. 56 851
[4]	Lee S C, Krishna, Brueck S R J 2009 Opt. Express 17 23160
[5]	Castellano F, Rossi F, Faist J, Lhuillier E, Berger V 2009 Phys. Rev. B 79 205304
[6]	Levine B F 1993 J. Appl. Phys. 74 R1
[7]	Nedelcu A, Costard E, Bois P, Marcadet X 2007 Infrared Phys. Technol. 50 227
[8]	Li N, Yuan X Z, Li N, Lu W, Li Z F, Dou H F, Shen X C, Jin L, Li H W, Zhou J M, Huang Y 2000 Acta Phys. Sin. 49 797 (in Chinese) [李娜, 袁先漳, 李宁, 陆卫, 李志峰, 窦红飞, 沈学础, 金莉, 李宏伟, 周均铭, 黄绮 2000 49 797]
[9]	Gunapala S, Bandara S, Bock J, Ressler M, Liu J, Mumolo J, Rafol S, Ting D, Wemer M 2002 Aerospace Conference Proceedings Montana, American, March 9-16, pp3-1437
[10]	Choi K K, Jhabvala M D, Sun J, Jhabvala C A, Waczynski A, Olver K 2013 Appl. Phys. Lett. 103 201113
[11]	Costard E, Bois P, de Rossi A, Nedelcu A, Cocle O, Gauthier F H, Audier F 2003 C. R. Phys. 10 1089
[12]	Wang L M, Zhang R, Lin Y N, Xu S L 2008 Infrared Laser Eng. S2 570 (in Chinese) [王力民, 张蕊, 林一楠, 徐世录 2008 红外与激光工程 S2 570]
[13]	Lourenco M A, Homewood K P, Considine L 1994 Mater. Sci. Eng. B 28 507
[14]	Whaley G J, Cohen P I 1990 Appl. Phys. Lett. 57 144
[15]	Sasaki T, Suzuki H, Sai A, Takahasi M, Fujikawa S, Kamiya I, Ohshita Y, Yamaguchi M 2011 J. Cryst. Growth 323 13
[16]	Quillec M, Goldstein L, Roux G L, Burgeat J, Primot J 1984 J. Appl. Phys. 55 2094
[17]	Tanner B K, Parbrook P J, Whitehouse C R, Keir A M, Johnson A D, Jones J, Wallis D, Smith L M, Luun B, Hogg J H C 2001 J. Phys. D: Appl. Phys. 34 A109
[18]	Li Q, Wang G T 2010 Appl. Phys. Lett. 97 181107
[19]	Zhang G, Ovtchinnikov A, Pessa M 1993 J. Cryst. Growth 127 209
[20]	Cho Y H, Gainer G H, Fischer A J, Song J J, Keller S, Mishra U K, DenBaars S P 1998 Appl. Phys. lett. 73 1370
[21]	Shi Z W, Wang L, Zhen H L, Wang W X, Chen H 2013 Nanoscale Res. Lett. 8 310

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