分子包埋纳米粒子薄膜阻变特性研究进展

李建昌; 邵思佳

doi:10.7498/aps.66.017101

摘要

有机分子包埋纳米粒子阻变薄膜是信息存储领域的研究热点之一，本文从器件电极、介质层结构、纳米粒子种类、阻变机理和柔性弯折等方面，综述了其近年来的研究进展.电极/分子及分子/纳米粒子界面性质对器件阻变特性影响较大，但影响规律及界面调控机理仍待探究；分子结构与纳米粒子的种类、尺度及分布可改变膜内界面性质进而影响阻变特性；器件阻变机理主要包括导电细丝、电荷俘获与释放和电荷转移三种，其中导电细丝又分金属、氧空位和碳细丝.分子包埋纳米粒子薄膜阻变研究现多停留在小规模和静态器件方面，下一步应从连续卷绕制备、纳米粒子分布精确控制和耐弯扭特性等方面深入研究，为实现大面积、低成本、高柔性阻变存储器奠定基础.

关键词:

Abstract

Resistive switching of molecular film incorporated with nanoparticles(NPs) has become a hot topic in the information storage industry, which is systematically reviewed from the aspects of electrodes, film structure, NPs, switching mechanism and mechanical properties. There are three sorts of structures i.e., layered, core-shell and complexed films, in which the film thickness affects the device charge transport and switching performance to a large extent. Usually, higher on/off ratio and lower threshold voltage can be expected for device with less-conductive active layers than that with more conductive ones. As a key factor, the interfaces of electrode/organic and molecule/NPs may largely affect the switching performance. It is shown that the type, size and distribution of NPs and molecular structure govern the interfacial behaviors, which in turn influences the switching mechanisms including filament formation/ rupture, charge trapping/ detrapping or charge transfer. For the case of filament theory, it may be ascribed to metallic, oxygen vacant or carbon-rich model. The as-embedded NPs can be classified as metal, metal oxide and/or carbon-like materials such as Au, Ag, Al, ZnO, TiO2, or graphene etc. The Au NPs show distinguishing features of little diameter, high chemical stability and large work function. On the other hand, the metal oxide NPs may form deep interfacial barrier with the target molecules and thus improve the switching characteristics. Small molecular-weight organics are also studied as embedding materials complexed with polymers as to strengthen the switching properties, and charge transfer is believed to be responsible for such an enhancement. Except for concentration and diameter of the NPs, their distribution in the active layer critically influences the memory behavior. The NPs can be made onto the molecular layer in-situ by vacuum thermal evaporation of different metals or sputtering deposition of various metal oxides. In such cases, the thickness of the deposition layer is a key parameter to obtain good switching performance. Although great progress has been made for static devices in small-scale, it is crucial to develop roll-to-roll manufacturing, precise NPs' distribution and dynamic mechanical properties in order to fabricate large-scale, low-cost and flexible memory devices. It still needs hard work on understanding the switching mechanism and engineering the interfacial properties of molecule/electrode and molecule/NPs, especially under bending conditions. New techniques should be developed to fabricate organic memory films embedded with NPs so as to avoid the problems of pinhole, effects of solvent and dust normally existing in traditional spin-coating films.

Keywords:

作者及机构信息

1.
东北大学真空与流体工程技术研究中心, 沈阳 110819

通信作者: 李建昌, jcli@mail.neu.edu.cn

Authors and contacts

1.
Vacuum and Fluid Engineering Research Center, Northeastern University, Shenyang 110819, China

Corresponding author: Li Jian-Chang, jcli@mail.neu.edu.cn

参考文献

[1]	Dearnaley G, Morgan D V, Stoneham A M 1970 J. Non-Crystalline Solids 4 612
[2]	Segui Y, Ai B, Carchano H 1976 J. Appl. Phys. 47 140
[3]	Henisch H K, Meyers J A 1974 Appl. Phys. Lett. 24 589
[4]	Simmons J G, Verderber R R 1967 Proc. Roy. Soc. A 301 77
[5]	Cho B, Kim T W, Choe M, Wang G, Song S, Lee T 2009 Organic Electron. 104 73
[6]	Cho B G, Song S H, Ji Y S, Lee T 2010 Appl. Phys. Lett. 97 063305
[7]	Prakash A, Ouyang J, Lin J L, Yang Y 2006 J. Appl. Phys. 100 054309
[8]	Lee J D, Seung H M, Kwon K C, Park J G 2011 Curr. Appl. Phys. 11 e25
[9]	Lee J D, Seung H M, Kwon K C, Park J G 2010 IEEE Conference on Network Infrastructure & Digital Content Chongqing, September 17-19, 2010 p409
[10]	Bozano L D, Kean B W, Deline V R, Salem J R, Scott J C 2004 Appl. Phys. Lett. 84 607
[11]	Ouyang J, Chu C W, Sieves D, Yang Y 2005 Appl. Phys. Lett. 86 123507
[12]	Ouyang J 2015 J. Mater. Chem. C 3 7243
[13]	Yun D Y, Song W S, Kim T W 2012 Appl. Phys. Lett. 5 103305
[14]	Pan L, Ji Z, Yi X, Zhu X, Chen X, Shang J 2015 Adv. Funct. Mater. 25 2677
[15]	Ramana C V V, Moodely M K, Kannan V, Maity A, Jayaramudu J, Clarke W 2012 Sensors & Actuators B:Chemical 161 684
[16]	Yang Y S, Koo J B, You I K 2012 J. Korean Phys. Soc. 60 1504
[17]	Son D I, Chan H Y, Kim W T, Jung J H, Kim T W 2009 Appl. Phys. Lett. 94 132103
[18]	Dao T T, Tran T V, Higashimine K, Okada H, Mott D, Maenosono S, Murata H 2011 Appl. Phys. Lett. 99 233303
[19]	Ko S H, Chan H Y, Kim T W 2012 J. Electrochem. Soc. 159 G93
[20]	Chen S, Song R, Wang J, Zhao Z, Jie Z, Zhao Y, Quan B, Huang W, Liu S 2008 J. Lumin. 128 1143
[21]	Park J G, Nam W S, Seo S H, Kim Y G, Oh Y H, Lee G S, Paik U G 2009 Nano Lett. 9 1713
[22]	Nam W S, Seo S H, Park J G 2011 Electrochem. Solid State Lett. 14 H277
[23]	Qu X P, Ding A L, Luo W G, Qiu P S, Chen X T 1996 J. Inorg. Mater. 11 499 (in Chinese)[屈新萍, 丁爱丽, 罗维根, 仇萍荪, 陈先同1996无机材料学报11 499]
[24]	Lai P Y, Chen J S 2007 Acta Phys. Chim. Sin. 23 1821
[25]	Capitán M J, álvarez J, Navío C, Miranda R 2016 J. Phys. Condens. Matter 28 185002
[26]	Tondelier D, Lmimouni K, Vuillaume D, Fery C, Haas G 2004 Appl. Phys. Lett. 85 5763
[27]	Ma L, Xu Q, Yang Y 2004 Appl. Phys. Lett. 84 4908
[28]	Kim Y, Yoo D, Jang J, Song Y, Jeong H, Cho K, Hwang W T, Lee W, Kim T W, Lee T 2016 Organic Electron. 33 48
[29]	Mukherjee B, Pal A J 2006 Organic Electron. 7 249
[30]	Ha H J, Lee J M, Kim M, Kim O 2008 Adv. Sci. Technol. 54 470
[31]	Ha H J, Kim O 2013 Organic Electron. 14 979
[32]	Park K K, Jung J H, Kim T W 2011 Appl. Phys. Lett. 98 193301
[33]	He P, Ye C, Deng T F, Wu J J, Zhang J C, Wang H 2016 Chin. J. Rare Metals 40 236 （in Chinese)[何品, 叶葱, 邓腾飞, 吴加吉, 张骏驰, 王浩2016稀有金属40 236]
[34]	Shim J H, Jung J H, Min H L, Kim T W, Son D I, Han A N, Kim S W 2011 Organic Electron. 12 1566
[35]	Lin H T, Pei Z, Chan Y J 2007 IEEE Electron Dev. Lett. 28 569
[36]	Lin H T, Pei Z, Chen J R, Hwang G W, Fan J F, Chan Y J 2007 IEEE Electron Dev. Lett. 28 951
[37]	Jung J H, Kim J H, Kim T W, Song M S, Kim Y H, Jin S 2006 Appl. Phys. Lett. 89 122110
[38]	Yook K S, Jeon S O, Joo C W, Lee J Y, Kim S H, Jang J 2009 Organic Electron. 10 48
[39]	Son D I, Kim T W, Shim J H, Jung J H, Lee D U, Lee J M, Park W I, Choi W K 2010 Nano Lett. 10 2441
[40]	Dong U L, Kim E K, Cho W J, Kim Y H 2011 Appl. Phys. A 102 933
[41]	Tseng Z L, Kao P C, Shih M F, Huang H H, Wang J Y, Chu S Y 2010 Appl. Phys. Lett. 97 212103
[42]	Shi Q, Xu J, Wu Y, Wang Y, Wang X, Hong Y, Jiang L, Li L 2014 Phys. Lett. A 378 3544
[43]	Ouyang J, Chu C W, Szmanda C R, Ma L P, Yang Y 2005 Nature Mater. 3 918
[44]	Joo W J, Choi T L, Lee J, Lee S K, Jung M S, Kim N, Kim J M 2006 J. Phys. Chem. B 110 23812
[45]	Kondo T, Sang M L, Malicki M, Domercq B, Marder S R, Kippelen B 2008 Adv. Funct. Mater. 18 1112
[46]	Xie X Y 2015 M. S. Dissertation (Beijing:Beijing Jiaotong University)（in Chinese)[谢小漪2015硕士学位论文(北京:北京交通大学)]
[47]	Zhao Y X 2007 M. S. Dissertation（Changchun:Jilin University)（in Chinese)[赵昳昕2007硕士学位论文(长春:吉林大学)]
[48]	Chi J Y 2014 M. S. Dissertation (Kaifeng:Henan University)（in Chinese)[赤建玉2014硕士学位论文(开封:河南大学)]
[49]	Dong W 2008 M. S. Dissertation (Harbin:Harbin University of Science and Technology)（in Chinese)[董伟2008硕士学位论文(哈尔滨:哈尔滨理工大学)]
[50]	Wu Z W, Liu Y, Wei S J, Huang X, Zhang D Y, Zhou M, Chen L W, Ma C Q, Wang H 2013 Acta Phys. Chim. Sin. 8 1735
[51]	Jung J H, Jin J Y, Lee I, Kim T W, Roh H G, Kim Y H 2006 Appl. Phys. Lett. 88 112107
[52]	Salaoru I, Paul S 2009 Philosoph. Trans. Roy. Soc. A:Math. Phys. Engineer. Sci. 367 4227
[53]	Xu G Q 2012 M. S. Dissertation (Harbin:Heilongjiang University)（in Chinese)[徐国强2012硕士学位论文(哈尔滨:黑龙江大学)]
[54]	Manzoor K, Vadera S R, Kumar N, Kutty T R N 2004 Solid State Commun. 129 469
[55]	Xiong Y L 2012 Ph. D. Dissertation (Wuhan:Wuhan University of technology)（in Chinese)[熊远禄2012博士学位论文(武汉:武汉理工大学)]
[56]	Ma X D 2013 M. S. Dissertation （Ningxia:Ningxia University)（in Chinese)[马晓东2013硕士学位论文(宁夏:宁夏大学)]
[57]	Tian G, Wu D, Shi L, Qi S, Wu Z 2012 Rsc Adv. 2 9846
[58]	Chen F 2008 M. S. Dissertation (Suzhou:Suzhou University)（in Chinese)[陈芬2008硕士学位论文(苏州:苏州大学)]
[59]	Cui H W, Du G B 2008 Chem. Adh. 30 48
[60]	Ling H F, Han Y, Yi M D, Yang T Fan, Qu L, Xie L H, Huang W 2015 Chin. Sci. Bull. 60 2404
[61]	Wu C, Li F, Guo T 2014 Appl. Phys. Lett. 104 183105
[62]	Li H R, Zhang F J, Zheng D S 2003 Chin. J. Lumin. 24 44 （in Chinese)[李海蓉, 张福甲, 郑代顺2003发光学报24 44]
[63]	Kao P C, Liu C C, Li T Y 2015 Organic Electron. 21 203
[64]	Li W L 2015 M. S. Dissertation（Taiyuan:Taiyuan University of Technology)（in Chinese)[李菀丽2015硕士学位论文(太原:太原理工大学)]
[65]	Ouyang J, Chu C W, Tseng J H, Prakash A, Yang Y 2005 Proc. IEEE 93 1287
[66]	Nam W S, Seo S H, Park K H, Hong S H, Lee G S, Park J G 2010 Curr. Appl. Phys. 10 e37
[67]	Senthilkumar V, Kim Y S 2015 Trans. Electr. Election. Mater. 16 290
[68]	Ling Q D, Lim S L, Song Y, Zhu C X, Chan D S, Kang E T, Neoh K G 2007 Langmuir 23 312
[69]	Bozano L D, Kean B W, Beinhoff M, Carter K R, Rice P M, Scott J C 2005 Adv. Funct. Mater. 15 1933
[70]	Zhao L C, Wu L L, Liu W K, Zhang H Q 2010 The 8th National Symposium on Electronic Process in Organic Solids Xi'an, China June 14-17, 2010 p307
[71]	Zhao S L, Kan P Z, Xu Z, Kong C, Wang D W, Yan Y, Wang Y S 2010 Organic Electron. 11 789
[72]	Li F, Son D I, Cha H M, Seo S M, Kim B J, Kim H J, Jung J H, Kim T W 2007 Appl. Phys. Lett. 90 222109
[73]	Lai P Y, Chen J S 2009 Organic Electron. 10 1590
[74]	Han Y, Wu G, Chen H, Wang M 2008 J. Appl. Polymer Sci. 109 882
[75]	Hao Y Z, Cai C L 2006 J. Funct. Mater. 37 22 (in Chinese)[郝彦忠, 蔡春立2006功能材料37 22]
[76]	Liu M H 2013 M. S. Dissertation (Shanghai:Tongji University)（in Chinese)[刘满华2013硕士学位论文(上海:同济大学)]
[77]	Hu Y S 2013 Ph. D. Dissertation (Changchun:University of Chinese Academy of Science)（in Chinese)[胡永生2013博士学位论文(长春:中国科学院大学)]
[78]	Onlaor K, Thiwawong T, Tunhoo B 2014 Organic Electron. 15 1254
[79]	Ramana C V, Moodley M K, Kannan V, Maity A 2013 Solid-State Electron. 81 45
[80]	Liu X, Ji Z, Shang L, Wang H, Chen Y, Han M, Lu C, Liu M, Chen J 2011 IEEE Electron Dev. Lett. 32 1140
[81]	Reddy V S, Karak S, Dhar A 2009 Appl. Phys. Lett. 94 173304
[82]	Reddy V S, Karak S, Ray S K, Dhar A 2009 Organic Electron. 65 138
[83]	Bao Q Y, Yang J P, Li Y Q, Tang J X 2010 Appl. Phys. Lett. 97 063303
[84]	Verbakel F, Meskers S C J, Leeuw D M D, Janssen R A J 2008 J. Phys. Chem. C 112 5254
[85]	Sun Y, Li L, Wen D, Bai X 2015 Organic Electron. 25 283
[86]	Yue D, Cui R, Ruan X, Huang H, Guo X, Wang Z, Gao X, Yang S, Dong J, Yi F, Sun B 2014 Organic Electron. 15 3482
[87]	Gong X 2014 M. D. Dissertation (Shenyang:Northeastern University)（in Chinese)[宫兴2014硕士学位论文(沈阳:东北大学)]
[88]	Song Y, Ling Q D, Lim S L, Teo E Y H, Tan Y P, Li L, Kang E T, Chan D S H, Zhu C 2007 IEEE Electron Dev. Lett. 28 107
[89]	Son D I, Park D H, Choi W K, Cho S H, Kim W T, Kim T W 2009 Nanotechnology 20 112
[90]	Son D I, You C H, Jung J H, Kim T W 2007 Adv. Mater. 19 4172
[91]	Xie W, Li Y, Sun W, Huang J, Xie H, Zhao X 2010 J. Photochem. Photobiol. A:Chemistry 216 149
[92]	Lin C W, Pan T S, Chen M C, Yang Y J, Tai Y, Chen Y F 2011 Appl. Phys. Lett. 99 023303
[93]	Lai Y S, Tu C H, Kwong D L, Chen J S 2005 Appl. Phys. Lett. 87 122101
[94]	Lin H T, Lin C Y, Pei Z, Chen J R, Chan Y J, Yeh Y H, Wu C C 2011 Organic Electron. 12 1632
[95]	Li C F, Fu X H, Li L R, Zhao H C 2014 Micronanoelectr. Technol. 51 24 （in Chinese)[李丛飞, 傅兴华, 李良荣, 赵海臣2014材料与结构51 24]
[96]	Chen Y C, Su Y K, Huang C Y, Yu H C, Cheng C Y, Chang T H 2011 Appl. Phys. Express 4 054204
[97]	Cölle M, Büchel M, Leeuw D M D 2006 Organic Electron. 7 305
[98]	Ooi P C, Aw K C, Razak K A, Makhsin S R, Gao W 2012 Microelectr. Engineer. 98 74
[99]	Chen J, Ma D 2006 J. Appl. Phys. 100 034512
[100]	Paul S, Kanwal A, Chhowalla M 2005 Nanotechnology 17 145
[101]	Sleiman A, Mabrook M F, Nejm R R, Ayesh A, Ghaferi A, Petty M C, Zeze D A 2012 J. Appl. Phys. 112 24509
[102]	Chan H Y, Jung J H, Jin K K, Kim T W 2011 Curr. Appl. Phys. 11 e40
[103]	Bohnenbuck B, Hauff E V, Parisi J, Deibel C, Dyakonov V 2006 J. Appl. Phys. 99 024506
[104]	Ouyang J 2015 J. Mater. Chem. C 3 7243
[105]	Ouyang J 2013 Organic Electron. 14 1458
[106]	Liu G, Zhuang X, Chen Y, Zhang B, Zhu J, Zhu C X, Neoh K G, Kang E T 2009 Appl. Phys. Lett. 95 253301
[107]	Chung I, Cho K, Yun J, Kim S 2012 Microelectr. Engineer. 97 122
[108]	Wang Z Q, Xu H Y, Li X H, Zhang X T, Liu Y X, Liu Y C 2011 IEEE Electron Dev. Lett. 32 1442
[109]	Kim S, Moon H, Gupta D, Yoo S, Choi Y K 2009 IEEE Transa. Electron Dev. 56 696
[110]	Xu W, Lu T J 2008 Adv. Mech. 38 137
[111]	Suo Z, Ma E Y, Gleskova H, Wagner S 1999 Appl. Phys. Lett. 74 1177
[112]	Mohammed D W, Waddingham R, Flewitt A J, Sierros K A, Bowen J, Kukureka S N 2015 Thin Solid Films 594 197
[113]	Gao W, Zhou B, Liu Y, Ma X, Liu Y, Wang Z, Zhu Y 2003 J. Appl. Polymer Sci. 89 2224
[114]	Choi H R, Eswaran S K, Lee S M, Cho Y S 2015 Acs Appl. Mater. Interfaces 7 17569
[115]	Yong U J, Oh S I, Choa S H, Kim H K, Kang S J 2013 Curr. Appl. Phys. 13 1331
[116]	Tseng Z L, Tsai Y C, Wu S, Juang Y D, Chu S Y 2013 Appl. Phys. A:Mater. Sci. Proc. 112 495
[117]	Son D I, Kim T W, Shim J H, Jung J H, Lee D U, Lee J M, Park W I, Choi W K 2010 Nano Lett. 10 2441
[118]	Song S, Cho B, Kim T, Ji Y, Jo M, Wang G, Choe M, Kahng Y H, Hwang H, Lee T 2010 Adv. Mater. 22 5048
[119]	Yan Y, Huang L B, Zhou Y, Han S T, Zhou L, Zhuang J, Xu Z X, Roy V A L 2015 Sci. Reports 5 15770
[120]	Dong H, Kervran Y, Coulon N, Sagazan O D, Jacques E, Brahim T M 2015 IEEE Trans. Electron Dev. 62 3278
[121]	Fan X, Wang J, Wang H, Liu X, Wang H, Liu X, Wang H 2015 Acs Appl. Mater. Interfaces 7 16287
[122]	Mahajan A, Hyun W J, Walker S B, Lewis J A, Francis L F, Frisbie C D 2015 Acs Appl. Mater. Interfaces 7 1841

施引文献

[1]	Dearnaley G, Morgan D V, Stoneham A M 1970 J. Non-Crystalline Solids 4 612
[2]	Segui Y, Ai B, Carchano H 1976 J. Appl. Phys. 47 140
[3]	Henisch H K, Meyers J A 1974 Appl. Phys. Lett. 24 589
[4]	Simmons J G, Verderber R R 1967 Proc. Roy. Soc. A 301 77
[5]	Cho B, Kim T W, Choe M, Wang G, Song S, Lee T 2009 Organic Electron. 104 73
[6]	Cho B G, Song S H, Ji Y S, Lee T 2010 Appl. Phys. Lett. 97 063305
[7]	Prakash A, Ouyang J, Lin J L, Yang Y 2006 J. Appl. Phys. 100 054309
[8]	Lee J D, Seung H M, Kwon K C, Park J G 2011 Curr. Appl. Phys. 11 e25
[9]	Lee J D, Seung H M, Kwon K C, Park J G 2010 IEEE Conference on Network Infrastructure & Digital Content Chongqing, September 17-19, 2010 p409
[10]	Bozano L D, Kean B W, Deline V R, Salem J R, Scott J C 2004 Appl. Phys. Lett. 84 607
[11]	Ouyang J, Chu C W, Sieves D, Yang Y 2005 Appl. Phys. Lett. 86 123507
[12]	Ouyang J 2015 J. Mater. Chem. C 3 7243
[13]	Yun D Y, Song W S, Kim T W 2012 Appl. Phys. Lett. 5 103305
[14]	Pan L, Ji Z, Yi X, Zhu X, Chen X, Shang J 2015 Adv. Funct. Mater. 25 2677
[15]	Ramana C V V, Moodely M K, Kannan V, Maity A, Jayaramudu J, Clarke W 2012 Sensors & Actuators B:Chemical 161 684
[16]	Yang Y S, Koo J B, You I K 2012 J. Korean Phys. Soc. 60 1504
[17]	Son D I, Chan H Y, Kim W T, Jung J H, Kim T W 2009 Appl. Phys. Lett. 94 132103
[18]	Dao T T, Tran T V, Higashimine K, Okada H, Mott D, Maenosono S, Murata H 2011 Appl. Phys. Lett. 99 233303
[19]	Ko S H, Chan H Y, Kim T W 2012 J. Electrochem. Soc. 159 G93
[20]	Chen S, Song R, Wang J, Zhao Z, Jie Z, Zhao Y, Quan B, Huang W, Liu S 2008 J. Lumin. 128 1143
[21]	Park J G, Nam W S, Seo S H, Kim Y G, Oh Y H, Lee G S, Paik U G 2009 Nano Lett. 9 1713
[22]	Nam W S, Seo S H, Park J G 2011 Electrochem. Solid State Lett. 14 H277
[23]	Qu X P, Ding A L, Luo W G, Qiu P S, Chen X T 1996 J. Inorg. Mater. 11 499 (in Chinese)[屈新萍, 丁爱丽, 罗维根, 仇萍荪, 陈先同1996无机材料学报11 499]
[24]	Lai P Y, Chen J S 2007 Acta Phys. Chim. Sin. 23 1821
[25]	Capitán M J, álvarez J, Navío C, Miranda R 2016 J. Phys. Condens. Matter 28 185002
[26]	Tondelier D, Lmimouni K, Vuillaume D, Fery C, Haas G 2004 Appl. Phys. Lett. 85 5763
[27]	Ma L, Xu Q, Yang Y 2004 Appl. Phys. Lett. 84 4908
[28]	Kim Y, Yoo D, Jang J, Song Y, Jeong H, Cho K, Hwang W T, Lee W, Kim T W, Lee T 2016 Organic Electron. 33 48
[29]	Mukherjee B, Pal A J 2006 Organic Electron. 7 249
[30]	Ha H J, Lee J M, Kim M, Kim O 2008 Adv. Sci. Technol. 54 470
[31]	Ha H J, Kim O 2013 Organic Electron. 14 979
[32]	Park K K, Jung J H, Kim T W 2011 Appl. Phys. Lett. 98 193301
[33]	He P, Ye C, Deng T F, Wu J J, Zhang J C, Wang H 2016 Chin. J. Rare Metals 40 236 （in Chinese)[何品, 叶葱, 邓腾飞, 吴加吉, 张骏驰, 王浩2016稀有金属40 236]
[34]	Shim J H, Jung J H, Min H L, Kim T W, Son D I, Han A N, Kim S W 2011 Organic Electron. 12 1566
[35]	Lin H T, Pei Z, Chan Y J 2007 IEEE Electron Dev. Lett. 28 569
[36]	Lin H T, Pei Z, Chen J R, Hwang G W, Fan J F, Chan Y J 2007 IEEE Electron Dev. Lett. 28 951
[37]	Jung J H, Kim J H, Kim T W, Song M S, Kim Y H, Jin S 2006 Appl. Phys. Lett. 89 122110
[38]	Yook K S, Jeon S O, Joo C W, Lee J Y, Kim S H, Jang J 2009 Organic Electron. 10 48
[39]	Son D I, Kim T W, Shim J H, Jung J H, Lee D U, Lee J M, Park W I, Choi W K 2010 Nano Lett. 10 2441
[40]	Dong U L, Kim E K, Cho W J, Kim Y H 2011 Appl. Phys. A 102 933
[41]	Tseng Z L, Kao P C, Shih M F, Huang H H, Wang J Y, Chu S Y 2010 Appl. Phys. Lett. 97 212103
[42]	Shi Q, Xu J, Wu Y, Wang Y, Wang X, Hong Y, Jiang L, Li L 2014 Phys. Lett. A 378 3544
[43]	Ouyang J, Chu C W, Szmanda C R, Ma L P, Yang Y 2005 Nature Mater. 3 918
[44]	Joo W J, Choi T L, Lee J, Lee S K, Jung M S, Kim N, Kim J M 2006 J. Phys. Chem. B 110 23812
[45]	Kondo T, Sang M L, Malicki M, Domercq B, Marder S R, Kippelen B 2008 Adv. Funct. Mater. 18 1112
[46]	Xie X Y 2015 M. S. Dissertation (Beijing:Beijing Jiaotong University)（in Chinese)[谢小漪2015硕士学位论文(北京:北京交通大学)]
[47]	Zhao Y X 2007 M. S. Dissertation（Changchun:Jilin University)（in Chinese)[赵昳昕2007硕士学位论文(长春:吉林大学)]
[48]	Chi J Y 2014 M. S. Dissertation (Kaifeng:Henan University)（in Chinese)[赤建玉2014硕士学位论文(开封:河南大学)]
[49]	Dong W 2008 M. S. Dissertation (Harbin:Harbin University of Science and Technology)（in Chinese)[董伟2008硕士学位论文(哈尔滨:哈尔滨理工大学)]
[50]	Wu Z W, Liu Y, Wei S J, Huang X, Zhang D Y, Zhou M, Chen L W, Ma C Q, Wang H 2013 Acta Phys. Chim. Sin. 8 1735
[51]	Jung J H, Jin J Y, Lee I, Kim T W, Roh H G, Kim Y H 2006 Appl. Phys. Lett. 88 112107
[52]	Salaoru I, Paul S 2009 Philosoph. Trans. Roy. Soc. A:Math. Phys. Engineer. Sci. 367 4227
[53]	Xu G Q 2012 M. S. Dissertation (Harbin:Heilongjiang University)（in Chinese)[徐国强2012硕士学位论文(哈尔滨:黑龙江大学)]
[54]	Manzoor K, Vadera S R, Kumar N, Kutty T R N 2004 Solid State Commun. 129 469
[55]	Xiong Y L 2012 Ph. D. Dissertation (Wuhan:Wuhan University of technology)（in Chinese)[熊远禄2012博士学位论文(武汉:武汉理工大学)]
[56]	Ma X D 2013 M. S. Dissertation （Ningxia:Ningxia University)（in Chinese)[马晓东2013硕士学位论文(宁夏:宁夏大学)]
[57]	Tian G, Wu D, Shi L, Qi S, Wu Z 2012 Rsc Adv. 2 9846
[58]	Chen F 2008 M. S. Dissertation (Suzhou:Suzhou University)（in Chinese)[陈芬2008硕士学位论文(苏州:苏州大学)]
[59]	Cui H W, Du G B 2008 Chem. Adh. 30 48
[60]	Ling H F, Han Y, Yi M D, Yang T Fan, Qu L, Xie L H, Huang W 2015 Chin. Sci. Bull. 60 2404
[61]	Wu C, Li F, Guo T 2014 Appl. Phys. Lett. 104 183105
[62]	Li H R, Zhang F J, Zheng D S 2003 Chin. J. Lumin. 24 44 （in Chinese)[李海蓉, 张福甲, 郑代顺2003发光学报24 44]
[63]	Kao P C, Liu C C, Li T Y 2015 Organic Electron. 21 203
[64]	Li W L 2015 M. S. Dissertation（Taiyuan:Taiyuan University of Technology)（in Chinese)[李菀丽2015硕士学位论文(太原:太原理工大学)]
[65]	Ouyang J, Chu C W, Tseng J H, Prakash A, Yang Y 2005 Proc. IEEE 93 1287
[66]	Nam W S, Seo S H, Park K H, Hong S H, Lee G S, Park J G 2010 Curr. Appl. Phys. 10 e37
[67]	Senthilkumar V, Kim Y S 2015 Trans. Electr. Election. Mater. 16 290
[68]	Ling Q D, Lim S L, Song Y, Zhu C X, Chan D S, Kang E T, Neoh K G 2007 Langmuir 23 312
[69]	Bozano L D, Kean B W, Beinhoff M, Carter K R, Rice P M, Scott J C 2005 Adv. Funct. Mater. 15 1933
[70]	Zhao L C, Wu L L, Liu W K, Zhang H Q 2010 The 8th National Symposium on Electronic Process in Organic Solids Xi'an, China June 14-17, 2010 p307
[71]	Zhao S L, Kan P Z, Xu Z, Kong C, Wang D W, Yan Y, Wang Y S 2010 Organic Electron. 11 789
[72]	Li F, Son D I, Cha H M, Seo S M, Kim B J, Kim H J, Jung J H, Kim T W 2007 Appl. Phys. Lett. 90 222109
[73]	Lai P Y, Chen J S 2009 Organic Electron. 10 1590
[74]	Han Y, Wu G, Chen H, Wang M 2008 J. Appl. Polymer Sci. 109 882
[75]	Hao Y Z, Cai C L 2006 J. Funct. Mater. 37 22 (in Chinese)[郝彦忠, 蔡春立2006功能材料37 22]
[76]	Liu M H 2013 M. S. Dissertation (Shanghai:Tongji University)（in Chinese)[刘满华2013硕士学位论文(上海:同济大学)]
[77]	Hu Y S 2013 Ph. D. Dissertation (Changchun:University of Chinese Academy of Science)（in Chinese)[胡永生2013博士学位论文(长春:中国科学院大学)]
[78]	Onlaor K, Thiwawong T, Tunhoo B 2014 Organic Electron. 15 1254
[79]	Ramana C V, Moodley M K, Kannan V, Maity A 2013 Solid-State Electron. 81 45
[80]	Liu X, Ji Z, Shang L, Wang H, Chen Y, Han M, Lu C, Liu M, Chen J 2011 IEEE Electron Dev. Lett. 32 1140
[81]	Reddy V S, Karak S, Dhar A 2009 Appl. Phys. Lett. 94 173304
[82]	Reddy V S, Karak S, Ray S K, Dhar A 2009 Organic Electron. 65 138
[83]	Bao Q Y, Yang J P, Li Y Q, Tang J X 2010 Appl. Phys. Lett. 97 063303
[84]	Verbakel F, Meskers S C J, Leeuw D M D, Janssen R A J 2008 J. Phys. Chem. C 112 5254
[85]	Sun Y, Li L, Wen D, Bai X 2015 Organic Electron. 25 283
[86]	Yue D, Cui R, Ruan X, Huang H, Guo X, Wang Z, Gao X, Yang S, Dong J, Yi F, Sun B 2014 Organic Electron. 15 3482
[87]	Gong X 2014 M. D. Dissertation (Shenyang:Northeastern University)（in Chinese)[宫兴2014硕士学位论文(沈阳:东北大学)]
[88]	Song Y, Ling Q D, Lim S L, Teo E Y H, Tan Y P, Li L, Kang E T, Chan D S H, Zhu C 2007 IEEE Electron Dev. Lett. 28 107
[89]	Son D I, Park D H, Choi W K, Cho S H, Kim W T, Kim T W 2009 Nanotechnology 20 112
[90]	Son D I, You C H, Jung J H, Kim T W 2007 Adv. Mater. 19 4172
[91]	Xie W, Li Y, Sun W, Huang J, Xie H, Zhao X 2010 J. Photochem. Photobiol. A:Chemistry 216 149
[92]	Lin C W, Pan T S, Chen M C, Yang Y J, Tai Y, Chen Y F 2011 Appl. Phys. Lett. 99 023303
[93]	Lai Y S, Tu C H, Kwong D L, Chen J S 2005 Appl. Phys. Lett. 87 122101
[94]	Lin H T, Lin C Y, Pei Z, Chen J R, Chan Y J, Yeh Y H, Wu C C 2011 Organic Electron. 12 1632
[95]	Li C F, Fu X H, Li L R, Zhao H C 2014 Micronanoelectr. Technol. 51 24 （in Chinese)[李丛飞, 傅兴华, 李良荣, 赵海臣2014材料与结构51 24]
[96]	Chen Y C, Su Y K, Huang C Y, Yu H C, Cheng C Y, Chang T H 2011 Appl. Phys. Express 4 054204
[97]	Cölle M, Büchel M, Leeuw D M D 2006 Organic Electron. 7 305
[98]	Ooi P C, Aw K C, Razak K A, Makhsin S R, Gao W 2012 Microelectr. Engineer. 98 74
[99]	Chen J, Ma D 2006 J. Appl. Phys. 100 034512
[100]	Paul S, Kanwal A, Chhowalla M 2005 Nanotechnology 17 145
[101]	Sleiman A, Mabrook M F, Nejm R R, Ayesh A, Ghaferi A, Petty M C, Zeze D A 2012 J. Appl. Phys. 112 24509
[102]	Chan H Y, Jung J H, Jin K K, Kim T W 2011 Curr. Appl. Phys. 11 e40
[103]	Bohnenbuck B, Hauff E V, Parisi J, Deibel C, Dyakonov V 2006 J. Appl. Phys. 99 024506
[104]	Ouyang J 2015 J. Mater. Chem. C 3 7243
[105]	Ouyang J 2013 Organic Electron. 14 1458
[106]	Liu G, Zhuang X, Chen Y, Zhang B, Zhu J, Zhu C X, Neoh K G, Kang E T 2009 Appl. Phys. Lett. 95 253301
[107]	Chung I, Cho K, Yun J, Kim S 2012 Microelectr. Engineer. 97 122
[108]	Wang Z Q, Xu H Y, Li X H, Zhang X T, Liu Y X, Liu Y C 2011 IEEE Electron Dev. Lett. 32 1442
[109]	Kim S, Moon H, Gupta D, Yoo S, Choi Y K 2009 IEEE Transa. Electron Dev. 56 696
[110]	Xu W, Lu T J 2008 Adv. Mech. 38 137
[111]	Suo Z, Ma E Y, Gleskova H, Wagner S 1999 Appl. Phys. Lett. 74 1177
[112]	Mohammed D W, Waddingham R, Flewitt A J, Sierros K A, Bowen J, Kukureka S N 2015 Thin Solid Films 594 197
[113]	Gao W, Zhou B, Liu Y, Ma X, Liu Y, Wang Z, Zhu Y 2003 J. Appl. Polymer Sci. 89 2224
[114]	Choi H R, Eswaran S K, Lee S M, Cho Y S 2015 Acs Appl. Mater. Interfaces 7 17569
[115]	Yong U J, Oh S I, Choa S H, Kim H K, Kang S J 2013 Curr. Appl. Phys. 13 1331
[116]	Tseng Z L, Tsai Y C, Wu S, Juang Y D, Chu S Y 2013 Appl. Phys. A:Mater. Sci. Proc. 112 495
[117]	Son D I, Kim T W, Shim J H, Jung J H, Lee D U, Lee J M, Park W I, Choi W K 2010 Nano Lett. 10 2441
[118]	Song S, Cho B, Kim T, Ji Y, Jo M, Wang G, Choe M, Kahng Y H, Hwang H, Lee T 2010 Adv. Mater. 22 5048
[119]	Yan Y, Huang L B, Zhou Y, Han S T, Zhou L, Zhuang J, Xu Z X, Roy V A L 2015 Sci. Reports 5 15770
[120]	Dong H, Kervran Y, Coulon N, Sagazan O D, Jacques E, Brahim T M 2015 IEEE Trans. Electron Dev. 62 3278
[121]	Fan X, Wang J, Wang H, Liu X, Wang H, Liu X, Wang H 2015 Acs Appl. Mater. Interfaces 7 16287
[122]	Mahajan A, Hyun W J, Walker S B, Lewis J A, Francis L F, Frisbie C D 2015 Acs Appl. Mater. Interfaces 7 1841

[1]	李伟, 朱慧文, 孙彤, 屈文山, 李建刚, 杨辉, 高志翔, 施薇, 魏斌, 王华. 基于1, 2 - 二氰基苯/聚合物复合材料的高耐久性有机阻变存储器. , 2023, 72(4): 048501. doi: 10.7498/aps.72.20221507
[2]	李婧, 丁帅帅, 胡文平. 有机自旋电子器件中的自旋界面研究进展. , 2022, 71(6): 067201. doi: 10.7498/aps.71.20211786
[3]	姬超, 梁春军, 由芳田, 何志群. 界面修饰对有机-无机杂化钙钛矿太阳能电池性能的影响. , 2021, 70(2): 028402. doi: 10.7498/aps.70.20201222
[4]	李会华, 张嘉辉, 余森江, 卢晨曦, 李领伟. 柔性基周期性厚度梯度薄膜的应变效应. , 2021, 70(1): 016801. doi: 10.7498/aps.70.20201008
[5]	郭宁, 周舟, 倪牮, 蔡宏琨, 张建军, 孙艳艳, 李娟. 基于二维有机无机杂化钙钛矿的薄膜晶体管. , 2020, 69(19): 198102. doi: 10.7498/aps.69.20200701
[6]	姚宽明, 姚靖仪, 海照, 李登峰, 解兆谦, 于欣格. 用于触觉感知的自供能可拉伸压电橡胶皮肤电子器件. , 2020, 69(17): 178701. doi: 10.7498/aps.69.20200664
[7]	侯艳洁, 胡春光, 张雷, 陈雪娇, 傅星, 胡小唐. 纳米有机薄膜有效导电层的反射光谱法研究. , 2016, 65(20): 200201. doi: 10.7498/aps.65.200201
[8]	柴玉华, 郭玉秀, 卞伟, 李雯, 杨涛, 仪明东, 范曲立, 解令海, 黄维. 柔性有机非易失性场效应晶体管存储器的研究进展. , 2014, 63(2): 027302. doi: 10.7498/aps.63.027302
[9]	庞华, 邓宁. Ni/HfO2/Pt阻变单元特性与机理的研究. , 2014, 63(14): 147301. doi: 10.7498/aps.63.147301
[10]	容佳玲, 陈赟汉, 周洁, 张雪, 王立, 曹进. 基于ITO/聚甲基丙烯酸甲酯/Al的有机阻变存储器SPICE仿真. , 2013, 62(22): 228502. doi: 10.7498/aps.62.228502
[11]	张兆慧, 韩奎, 曹娟, 王帆, 杨丽娟. 有机分子超薄膜的结构对摩擦的影响. , 2012, 61(2): 028701. doi: 10.7498/aps.61.028701
[12]	向辉, 刘大欢, 阳庆元, 密建国, 仲崇立. 骨架柔性对短链烷烃分子在金属-有机骨架材料中扩散的影响. , 2011, 60(9): 093602. doi: 10.7498/aps.60.093602
[13]	李艳武, 刘彭义, 侯林涛, 吴冰. Rubrene作电子传输层的异质结有机太阳能电池. , 2010, 59(2): 1248-1251. doi: 10.7498/aps.59.1248
[14]	毛宏颖, 黄寒, 严欣澂, 陈桥, 钱惠琴, 张建华, 李海洋, 何丕模, 鲍世宁. 有机半导体perylene和tetracene在Ag(110)表面上有序薄膜的结构与电子态研究. , 2005, 54(1): 460-466. doi: 10.7498/aps.54.460
[15]	时东霞, 巴德纯, 庞世瑾, 宋延林, 高鸿钧. 有机纳米信息存储中的结构转变. , 2001, 50(5): 990-993. doi: 10.7498/aps.50.990
[16]	时东霞, 宋延林, 张昊旭, 解思深, 庞世瑾, 高鸿钧. 有机单体3-phenyl-1-ureidonitrile薄膜的超高密度信息存储. , 2001, 50(2): 361-364. doi: 10.7498/aps.50.361
[17]	刘丽英, 徐雷, 侯占佳, 徐志凌, 陈杰, 王文澄, 李富铭. 有机/无机薄膜凝胶动态过程的实时光学二次谐波产生研究. , 1999, 48(1): 69-73. doi: 10.7498/aps.48.69
[18]	许杞安, 沈明荣, 宁兆元, 朱警生. 电解有机溶液法制备CNx薄膜. , 1999, 48(7): 1292-1296. doi: 10.7498/aps.48.1292
[19]	马立平, 杨文军, 薛增泉, 陈慧英, 庞世瑾. 有机复合薄膜中超高密度信息存储研究. , 1998, 47(7): 1229-1232. doi: 10.7498/aps.47.1229
[20]	钱人元, 金祥凤, 周淑芹. 有机固体薄膜的交流电导. , 1980, 29(8): 992-999. doi: 10.7498/aps.29.992

计量

文章访问数: 7735
PDF下载量: 519
被引次数: 0

姓名
邮箱
手机号码
标题
留言内容
验证码

搜索

留言板