硅基III-V族量子点激光器的发展现状和前景

王霆; 张建军; Huiyun Liu

doi:10.7498/aps.64.204209

摘要

本文简要综述了硅基III-V族量子点激光器的研究进展. 在介绍了量子点激光器的优势和发展后, 重点介绍了近年来硅基、锗基III-V族量子点材料生长上的突破性进展及所带来的器件性能的大幅提高, 如实现了锗基和硅基1.3 m InAs/GaAs量子点激光器的室温激射, 锗基量子点激光器的阈值电流低至55.2 A/cm2并可达60 ℃以上的连续激射, 通过锗硅虚拟衬底, 在硅基上实现了30 ℃下以16.6 mW的输出功率达到4600 h的激光寿命, 这些突破性的进展为硅基光电子集成打开了新的大门.

关键词:

Abstract

In this article, the recent progress of III-V quantum dot lasers on silicon substrates for silicon photonic integration is reviewed. By introducing various epitaxial techniques, room-temperature 1.3-m InAs/GaAs quantum dot laser on Si, Ge and SiGe substrates have been achieved respectively. Quantum dot lasers on Ge substrate has an ultra-low threshold current density of 55.2 A/cm2 at room temperature, which can operate over 60 ℃ in continuous-wave mode. Futhermore, by using the SiGe virtual substrate, at 30 ℃ and an output power of 16.6 mW, a laser lifetime of 4600 h has been reached, which indicates a bright future for the large-scale photonic integration.

Keywords:

作者及机构信息

1.
中国科学院物理研究所, 北京 100190;

2.
Department of Electrical and Electronic Engineering, University College London, Torrington Place, London, UK

Authors and contacts

1.
Institute of Physics, Chinese Academy Sciences, Beijing 100190, China;

2.
Department of Electrical and Electronic Engineering, University College London, Torrington Place, London, UK

参考文献

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施引文献

[1]	Zhou Z P 2012 Si-based Optoeletronics (Beijing: Beijing University Press) (in Chinese) [周治平 2012 硅基光电子学 (北京: 北京大学出版社)]
[2]	Camacho-Aguilera R E, Cai Y, Patel N, Bessette J T, Romagnoli M, Kimerling L C, Michel J 2012 Opt. Express 20 11316
[3]	Wirths S, Geiger R, von den Driesch N, Mussler G, Stoica T, Mantl S, Ikonic Z, Luysberg M, Chiussi S, Hartmann J M, Sigg H, Faist J, Buca D, Grtzmacher D 2015 Nat. Photon. 9 88
[4]	D'Avezac M, Luo J W, Chanier T, Zunger A 2012 Phys. Rev. Lett. 108 027401
[5]	Liu H, Wang T, Jiang Q, Hogg R, Tutu F, Pozzi F, Seeds A 2011 Nat. Photon. 5 416
[6]	Wang T, Liu H, Lee A, Pozzi F, Seeds A 2011 Opt. Express 19 11381
[7]	Lee A, Jiang A, Tang M, Seeds A, Liu H 2012 Opt. Express 20 22181
[8]	Chen S, Tang M, Wu J, Jiang Q, Dorogan V, Benamara M, Mazur Y, Salamo G, Seeds A, Liu H 2014 Electron Lett. 50 1467
[9]	Kroemer H 1963 Proc. IEEE 51 1782
[10]	Alferov Z I, Kazarinov R 1963 181737
[11]	Asada M, Miyamoto Y, Suematsu Y 1986 IEEE J. Quant. Electron. 22 1915
[12]	Arakawa Y, Sakaki H 1982 Appl. Phys. Lett. 40 939
[13]	Liu G, Stintz A, Li H, Malloy K, Lester L 1999 Electron. Lett. 35 1163
[14]	Liu H, Hopkinson M, Harrison C, Steer M, Frith R, Sellers I, Mowbray D, Skolnick M 2003 J. Appl. Phys. 93 2931
[15]	Liu H, Sellers I, Badcock T, Mowbray D, Skolnick M, Groom K, Gutierrez M, Hopkinson M, Ng J, David J 2004 Appl. Phys. Lett. 85 704
[16]	Liu H, Sellers I, Gutierrez M, Groom K, Soong W, Hopkinson M, David J, Beanland R, Badcock T, Mowbray D 2004 J. Appl. Phys. 96 1988
[17]	Sugawara M, Usami M 2009 Nat. Photon. 3 30
[18]	Maximov M V, Ledentsov N N 2004 Dekker Encyclopedia Nanosci. Nanotechnol. 3109
[19]	Li S, Gong Q, Cao C, Wang X, Yan J, Wang Y, Wang H 2013 Infrared Phys. Technol. 60 216
[20]	Dingle R, Henry C H 1976 US3982207A
[21]	Hirayama H, Matsunaga K, Asada M, Suematsu Y 1994 Electron Lett. 30 142
[22]	Kirstaedter N, Ledentsov N N, Grundmann M, Bimberg D, Ustinov V M, Ruvimov S S, Maximov M V, Kop'ev P S, Alferov Z I, Richter U, Werner P, Gosele U, Heydenreich J 1994 Electron Lett. 30 1416
[23]	Wu J, Chen S, Seeds A, Liu H 2015 J. Phys. D 48 363001
[24]	van der Ziel J P, Dupuis R D, Logan R A, Pinzone C J 1987 Appl. Phys. Lett. 51 89
[25]	Choi H K, Wang C A, Karam N H 1991 Appl. Phys. Lett. 59 2633
[26]	Kazi Z I, Thilakan P, Egawa T, Umeno M, Jimbo T 2001 Jpn. J. Appl. Phys. 40 4903
[27]	Kazi Z I, Egawa T, Jimbo T, Umeno M 2000 Jpn. J. Appl. Phys. 39 3860
[28]	Groenert M E, Pitera A J, Ram R J, Fitzgerald E A 2003 J. Vac. Sci. Technol. B 21 1064
[29]	Liu A Y, Herrick R W, Ueda O, Petroff P M, Gossard A C, Bowers J E 2015 IEEE J. Quantum Electron. 21 1900708
[30]	Jalali B, Fathpour S 2006 J. Lightwave Techn. 24 4600
[31]	Rong H, Jones R, Liu A, Cohen O, Hak D, Fang A, Paniccia M 2005 Nature 433 725
[32]	Chen X, Li C, Tsang H K 2011 NPG Asia Materials 3 34
[33]	Park H, Fang A W, Kodama S, Bowers J E 2005 Opt. Express 13 9460
[34]	Tanabe K, Watanabe K, Arakawa Y 2012 Sci. Rep. 2 349
[35]	Liang D, Bowers J E 2010 Nat. Photon. 4 511
[36]	Wang W 1984 Appl. Phys. Lett. 44 1149
[37]	Fletcher R M, Wagner D K, Ballantyne J M 1984 Appl. Phys. Lett. 44 967
[38]	Deppe D, Holonyak J N, Nam D, Hsieh K, Jackson G, Matyi R, Shichijo H, Epler J, Chung H 1987 Appl. Phys. Lett. 51 637
[39]	Deppe D, Nam D, Holonyak J N, Hsieh K, Matyi R, Shichijo H, Epler J, Chung H 1987 Appl. Phys. Lett. 51 1271
[40]	Kaliski R, Holonyak J N, Hsieh K, Nam D, Lee J, Shichijo H, Burnham R, Epler J, Chung H 1987 Appl. Phys. Lett. 50 836
[41]	Hall D, Deppe D, Holonyak J N, Matyi R, Shichijo H, Epler J 1988 J. Appl. Phys. 64 2854
[42]	Linder K, Phillips J, Qasaimeh O, Liu X, Krishna S, Bhattacharya P, Jiang J 1999 Appl. Phys. Lett. 74 1355
[43]	Kazi Z I, Egawa T, Umeno M, Jimbo T 2001 J. Appl. Phys. 90 5463
[44]	Mi Z, Bhattacharya P, Yang J, Pipem K 2005 Electron. Lett. 41 742
[45]	Mi Z, Yang J, Bhattacharya P, Huffaker D 2006 Electron. Lett. 42 121
[46]	Yang J, Bhattacharya P, Mi Z 2007 IEEE Trans. Electron Devices 54 2849
[47]	Yang J, Bhattacharya P, Wu Z 2007 IEEE Photon. Technol. Lett. 19 747
[48]	Yang J, Bhattacharya P 2008 Opt. Express 16 5136
[49]	Li L, Guimard D, Rajesh M, Arakawa Y 2008 Appl. Phys. Lett. 92 3105
[50]	Tanabe K, Watanabe K, Arakawa Y 2012 Sci. Rep. 2 349
[51]	Liu A Y, Zhang C, Norman J, Snyder A, Lubyshev D, Fastenau J M, Liu A W, Gossard A C, Bowers J E 2014 Appl. Phys. Lett. 104 041104
[52]	Liu A Y, Zhang C, Snyder A, Lubyshev D, Fastenau J M, Liu A W, Gossard A C, Bowers J E 2014 J. Vac. Sci. Technol. B 32 02C108

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