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垂直多结光伏型集成硅X射线探测器的实现和实验

张治国

引用本文:
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垂直多结光伏型集成硅X射线探测器的实现和实验

张治国

Realization and experiment of vertical multijunction integrated photovoltaic Si X-ray detector

Zhang Zhi-Guo
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  • 介绍垂直多结器件的结构, 给出了热迁移制结的工艺条件和结果; 介绍了处理器件电极引线的隔离线方法, 解决了经过热迁移掺杂后光刻电极套不准的难题, 解决了把所有P型区域连接起来的问题, 达到了敏感区金属零遮挡的目的. 描述了利用展宽电极尺度的方法实现多单元器件的集成; 给出了X光强与光电流电压之间的数学模型和几个重要参数, 介绍了器件输出电压与X光强度之间的测量关系, 理论与实际情况符合得非常好. 最后对测量数据做了分析, 证明器件有足够的灵敏度和分辨率.
    The structure of the vertical multijunction detector is introduced, and the result and technologcial conditions of preparing junction by thermomigration method are presented. In addition, the insulation line method of processing electrode wire is specially introduced; the problem of photoetching electrode after thermomigration is solved; the effects of technologcial conditions on device performance are analyzed. Besides, the difficulty in connecting all P regions is solved, and the aim of zero shade for sensitive regions is achieved. Specially, in order to realize integrating multicell device, a method of widening the size of electrode wire is described. Several important parameters are described, and the math model for the relationship of the X-ray intensity with both photovoltage and photocurrent is set up. At the same time, we introduce the measurement relation between the output voltage of the device and X-ray intensity, which shows that the measurement data and theoretical results are consistent. Finally, we analyze the measurement data, and demonstrate that the device has good enough sensibility and resolution.
    • 基金项目: 福建省高校服务海西建设重点项目(批准号: A100)和内蒙古自然科学基金(批准号: 86044)资助的课题.
    • Funds: Project supported by the Important Item of University Serving Haixi of Fujian Provinca, China (Grant No. A100) and the Natural Science Foundation of Inner Mongoliz, China (Grant No. 86044).
    [1]

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    [2]

    Koenig T, Hamann E, Procz S, Ballabriga R, Cecilia A, Zuber M, Llopart X, Campbell M, Fauler A, Baumbach T, Fiederle M 2013 IEEE Trans. Nucl. Sci. 60 4713

    [3]

    Rocha J G, Dias R A, Goncalves L, Minas G, Ferreira A, Costa C M, Mendez S L 2009 IEEE Sensors J. 9 1154

    [4]

    Ryu S G, Tsuru T G, Nakashima S, Takeda A, Arai Y, Miyoshi T, Ichimiya R, Ikemoto Y, Matsumoto H, Imamura T, Ohmoto T, Iwata A 2011 IEEE Trans. Nucl. Sci. 58 2528

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    Porro M, Andricek L, Aschauer S, et al. 2011 IEEE Trans. Nucl. Sci. 59 3339

    [6]

    Kim H S, Han S W, Yang J H, et al. 2013 IEEE J. Solid-St. Circ. 48 541

    [7]

    Mikerov V, Koshelev A, Ozerov O 2013 IEEE Trans. Nucl. Sci. 60 963

    [8]

    Guo C, Xu R K, Lee Z H, Xia G X, Ning J M, Song F J 2004 Acta Phys. Sin. 53 1331 (in Chinese) [郭存, 徐荣昆, 李正宏, 夏广新, 宁家敏, 宋凤军 2004 53 1331]

    [9]

    Andrii O S, Volodimir Y D 2012 Radiation Measurements 47 27 e29

    [10]

    Zhao X L, Kang X, Chen L, Zhang Z B, Liu J L, Ouyang X P, Peng W B, He Y N 2014 Acta Phys. Sin. 63 098502 (in Chinese) [赵小龙, 康雪, 陈亮, 张忠兵, 刘金良, 欧阳晓平, 彭文博, 何永宁 2014 63 098502]

    [11]

    Yu B, Chen B L, Hou L F, Su M, Huang T X, Liu S Y 2013 Acta Phys. Sin. 62 098502 (in Chinese) [余波, 陈伯伦, 侯立飞, 苏明, 黄天晅, 刘慎业 2013 62 098502]

    [12]

    Akarin I, Joseph L K, Maxim S, Paul J S 2011 Org. Electron. 12 1903

    [13]

    Miller N A, Neil G C O', Beall J A, Hilton G C, Irwin K D, Schmidt D R, Vale L R, Ullom J N 2008 Appl. Phys. Lett. 92 163501

    [14]

    Aghamir F M, Behbahani R A 2014 Chin. Phys. B 23 065203

    [15]

    Zhang Z G 2006 Chin. J. Semicond. 27 1294 (in Chinese) [张治国 2006 半导体学报 27 1294]

    [16]

    Cline H E, Anthony T R 1976 J. Appl. Phys. 47 2325

    [17]

    Cline H E, Anthony T R 1976 J. Appl. Phys. 47 2332

    [18]

    Anthony T R, Cline H E 1976 J. Appl. Phys. 47 2550

    [19]

    Zhang Z H, Wu Q L 1994 Semicond. Technol. 2 55 (in Chinese) [张治国, 吴巧兰 1994 半导体技术 2 55]

  • [1]

    Brambilla A, Buffet P O, Gonon G, Rinkel J, Moulin V, Boudou C, Verger L 2013 IEEE Trans. Nucl. Sci. 60 408

    [2]

    Koenig T, Hamann E, Procz S, Ballabriga R, Cecilia A, Zuber M, Llopart X, Campbell M, Fauler A, Baumbach T, Fiederle M 2013 IEEE Trans. Nucl. Sci. 60 4713

    [3]

    Rocha J G, Dias R A, Goncalves L, Minas G, Ferreira A, Costa C M, Mendez S L 2009 IEEE Sensors J. 9 1154

    [4]

    Ryu S G, Tsuru T G, Nakashima S, Takeda A, Arai Y, Miyoshi T, Ichimiya R, Ikemoto Y, Matsumoto H, Imamura T, Ohmoto T, Iwata A 2011 IEEE Trans. Nucl. Sci. 58 2528

    [5]

    Porro M, Andricek L, Aschauer S, et al. 2011 IEEE Trans. Nucl. Sci. 59 3339

    [6]

    Kim H S, Han S W, Yang J H, et al. 2013 IEEE J. Solid-St. Circ. 48 541

    [7]

    Mikerov V, Koshelev A, Ozerov O 2013 IEEE Trans. Nucl. Sci. 60 963

    [8]

    Guo C, Xu R K, Lee Z H, Xia G X, Ning J M, Song F J 2004 Acta Phys. Sin. 53 1331 (in Chinese) [郭存, 徐荣昆, 李正宏, 夏广新, 宁家敏, 宋凤军 2004 53 1331]

    [9]

    Andrii O S, Volodimir Y D 2012 Radiation Measurements 47 27 e29

    [10]

    Zhao X L, Kang X, Chen L, Zhang Z B, Liu J L, Ouyang X P, Peng W B, He Y N 2014 Acta Phys. Sin. 63 098502 (in Chinese) [赵小龙, 康雪, 陈亮, 张忠兵, 刘金良, 欧阳晓平, 彭文博, 何永宁 2014 63 098502]

    [11]

    Yu B, Chen B L, Hou L F, Su M, Huang T X, Liu S Y 2013 Acta Phys. Sin. 62 098502 (in Chinese) [余波, 陈伯伦, 侯立飞, 苏明, 黄天晅, 刘慎业 2013 62 098502]

    [12]

    Akarin I, Joseph L K, Maxim S, Paul J S 2011 Org. Electron. 12 1903

    [13]

    Miller N A, Neil G C O', Beall J A, Hilton G C, Irwin K D, Schmidt D R, Vale L R, Ullom J N 2008 Appl. Phys. Lett. 92 163501

    [14]

    Aghamir F M, Behbahani R A 2014 Chin. Phys. B 23 065203

    [15]

    Zhang Z G 2006 Chin. J. Semicond. 27 1294 (in Chinese) [张治国 2006 半导体学报 27 1294]

    [16]

    Cline H E, Anthony T R 1976 J. Appl. Phys. 47 2325

    [17]

    Cline H E, Anthony T R 1976 J. Appl. Phys. 47 2332

    [18]

    Anthony T R, Cline H E 1976 J. Appl. Phys. 47 2550

    [19]

    Zhang Z H, Wu Q L 1994 Semicond. Technol. 2 55 (in Chinese) [张治国, 吴巧兰 1994 半导体技术 2 55]

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出版历程
  • 收稿日期:  2014-06-11
  • 修回日期:  2014-08-21
  • 刊出日期:  2014-12-05

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