空间多能电子辐照聚合物充电过程的稳态特性

刘婧; 张海波

doi:10.7498/aps.63.149401

摘要

空间同步轨道上多能电子辐照聚合物的充电过程及其稳态特性是研究和抑制通信卫星静电放电的基础. 在同步电子散射-输运微观模型的基础上，采用具有10–400 keV积分能谱分布的多能电子辐照聚酰亚胺样品，进行了多能电子辐照聚酰亚胺充电过程的数值模拟，获得了空间电荷密度、空间电位、空间电场分布和聚合物样品参数条件下的表面电位和最大场强. 结果表明，多能电子与样品发生散射作用并沉积在样品内形成具有高密度的电荷区域分布，同时在迁移和扩散的作用下输运至样品底部形成样品电流；充电达到稳态、电子迁移率较小时（小于10-10 cm2·V-1·s-1），表面电位绝对值和充电强度随电子迁移率的降低明显加强，捕获密度较大时（大于1014 cm-3），表面电位绝对值和充电强度随捕获密度的增大明显加强；聚合物样品厚度对表面电位和充电强度的影响大于电子迁移率、捕获密度和相对介电常数的影响. 研究结果对于揭示空间多能电子辐照聚合物的充电现象及微观机理、提高航天器故障机理研究水平具有重要科学意义和价值.

关键词:

Abstract

Charging characteristics of polymer irradiated by multi-energetic electrons is a basis to study and prevent electrostatic discharge in space radiation environment. The polymer irradiated by multi-energetic electrons is modeled and simulated. The space charge distribution, surface potential, space potential, surface potential and maximum field strength under the condition of sample parameters are obtained. The results show that because of electron drift and diffusion, electrons can transit through the electron scattering region, forming negative space charges. Some electrons can flow to the substrate of polymer. In the equilibrium state, the surface potential of the film negatively charged decreases with film thickness and trap density increasing, and it increases with electron mobility and relative permittivity increasing. The maximum field strength increases with film thickness and trap density increasing, and it decreases with electron mobility and relative permittivity increasing. The high-energy electrons section of multi-energetic electrons will shorten the equilibrium of charging process.

Keywords:

作者及机构信息

刘婧,
张海波

1.
西安交通大学, 电子科学与技术电子物理与器件教育部重点实验室, 西安 710049

基金项目: 国家自然科学基金（批准号：11175140）资助的课题.

Authors and contacts

1.
Key Laboratory for Physical Electronics and Devices of the Ministry of Education, Department of Electronic Science and Technology, Xi'an Jiaotong University, Xi'an 710049, China

Funds: Project supported by the National Natural Science Foundation of China (Grant No.11175140).

参考文献

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[18]	Takada T, Miyake H, Tanaka Y 2006 IEEE Trans. Plasma Sci. 34 2176
[19]	Paulmier T, Dirassen B, Payan D, Van Eesbeek M 2009 IEEE Trans. Dielectr. Electr. Insul. 16 682
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[29]	Li W Q, Zhang H B 2010 Appl. Surf. Sci. 256 3482
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[34]	Molinie P, Dessante P, Hanna R, Paulmier T, Dirassen B, Belhaj M, Payan D, Balcon N 2012 IEEE Trans. Dielectr. Electr. Insul. 19 1215
[35]	Feng G B, Cao M, Yan L P, Zhang H B 2013 Micron 52-53 62
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[38]	Li W Q, Zhang H B 2010 Micron 41 416
[39]	Zheng F H, Zhang Y W, Xia J F, Xiao C, An Z L 2009 J. Appl. Phys. 106 064105

施引文献

[1]	Garrett H B, Whittlesey A C 2000 IEEE Trans. Plasma Sci. 28 2017
[2]	Li S T, Li G C, Min D M, Zhao N 2013 Acta Phys. Sin. 62 059401 (in Chinese) [李盛涛, 李国倡, 闵道敏, 赵妮 2013 62 059401]
[3]	Balmain K G 1986 IEEE Trans. Electr. Insul. 21 427
[4]	Gao Z X, Li H W, Cai M H, Liu D Q, Huang J G, Han J W 2012 Acta Phys. Sin. 61 039601 (in Chinese) [高著秀, 李宏伟, 蔡明辉, 刘丹秋, 黄建国, 韩建伟 2012 61 039601]
[5]	Cao H F, Liu S H, Sun Y W, Yuan Q Y 2013 Acta Phys. Sin. 62 119401 (in Chinese) [曹鹤飞, 刘尚合, 孙永卫, 原青云 2013 62 119401]
[6]	Huang J G, Yi Z, Meng L F, Zhao H, Liu Y N 2013 Acta Phys. Sin. 62 099401 (in Chinese) [黄建国, 易忠, 孟立飞, 赵华, 刘业楠 2013 62 099401]
[7]	Deforest S E 1972 J. Geophys. Res. 77 651
[8]	Koons H, Mazur J, Lopatin A, Pitchford D, Bogorad A, Herschitz R 2006 J. Spacecr. Rockets 43 178
[9]	Masui H, Toyoda K, Cho M 2008 IEEE Trans. Plasma Sci. 36 2387
[10]	Czeremuszkin G, Latreche M, Wertheimer M R 2001 Nucl. Instrum. Meth. B 185 88
[11]	Mateo-Velez J C, Inguimbert V, Roussel J F, Sarrail D, Levy L, Boulay F, Laffont E, Payan D 2008 IEEE Trans. Plasma Sci. 36 2395
[12]	Huang J G, Han J W 2010 Acta Phys. Sin. 59 2907 (in Chinese) [黄建国, 韩建伟 2010 59 2907]
[13]	Quan R H, Zhang Z L, Han J W, Huang J G, Yan X J 2009 Acta Phys. Sin. 58 1205 (in Chinese) [全荣辉, 张振龙, 韩建伟, 黄建国, 闫小娟 2009 58 1205]
[14]	Griseri V, Perrin C, Laurent C 2009 J. Electrost. 67 400
[15]	Donegan M M, Sample J L, Dennison J R, Hoffmann R 2010 J. Spacecr. Rockets 47 134
[16]	Miyake H, Tanaka Y, Takada T 2007 IEEE Trans. Dielectr. Electr. Insul. 14 520
[17]	Sarrailh P, Mateo-Velez J C, Roussel J F, Dirassen B, Forest J, Thiebault B, Rodgers D, Hilgers A 2012 IEEE Trans. Plasma Sci. 40 368
[18]	Takada T, Miyake H, Tanaka Y 2006 IEEE Trans. Plasma Sci. 34 2176
[19]	Paulmier T, Dirassen B, Payan D, Van Eesbeek M 2009 IEEE Trans. Dielectr. Electr. Insul. 16 682
[20]	Qin X G, He D Y, Wang J 2009 Acta Phys. Sin. 58 684 (in Chinese) [秦晓刚, 贺德衍, 王骥 2009 58 684]
[21]	Quan R H, Han J W, Zhang Z L 2013 Acta Phys. Sin. 62 245205 (in Chinese) [全荣辉, 韩建伟, 张振龙 2013 62 245205]
[22]	Li W Q, Zhang H B 2008 Acta Phys. Sin. 57 3219 (in Chinese) [李维勤, 张海波 2008 57 3219]
[23]	Cao M, Wang F, Liu J, Zhang H B 2012 Chin. Phys. B 21 127901
[24]	Yang W J, Li Y D, Liu C L 2013 Acta Phys. Sin. 62 087901 (in Chinese) [杨文晋, 李永东, 刘纯亮 2013 62 087901]
[25]	Renoud R, Mady F, Attard C, Bigarre J, Ganachaud J P 2004 Phys. Status Solidi A 201 2119
[26]	Dirassen B, Levy L, Reulet R, Payan D 2003 Proceedings of the 9th International Symposium on Materials in a Space Environment Noordwijk, Netherlands Jun. 16-20, 2003 p351
[27]	Yasuda M, Kainuma Y, Kawata H, Hirai Y, Tanaka Y, Watanabe R, Kotera M 2008 J. Appl. Phys. 104 124904
[28]	Perrin C, Griseri V, Inguimbert C, Laurent C 2008 J. Phys. D: Appl. Phys. 41 205417
[29]	Li W Q, Zhang H B 2010 Appl. Surf. Sci. 256 3482
[30]	Zhang H B, Feng R J, Ura K 2003 Chin. Phys. Lett. 20 2011
[31]	Joy D C 1995 Monte Carlo Modeling for Electron Microscopy and Microanalysis (New York: Oxford University Press) p27
[32]	Cornet N, Goeuriot D, Guerret-Piecourt C, Juve D, Treheux D, Touzin M, Fitting H J 2008 J. Appl. Phys. 103 064110
[33]	Touzin M, Goeuriot D, Guerret-Piecourt C, Juve D, Treheux D, Fitting H J 2006 J. Appl. Phys. 99 114110
[34]	Molinie P, Dessante P, Hanna R, Paulmier T, Dirassen B, Belhaj M, Payan D, Balcon N 2012 IEEE Trans. Dielectr. Electr. Insul. 19 1215
[35]	Feng G B, Cao M, Yan L P, Zhang H B 2013 Micron 52-53 62
[36]	Sessler G M, Figueiredo M T, Ferreira G F L 2004 IEEE Trans. Dielectr. Electr. Insul. 11 192
[37]	Sessler G M 1992 IEEE Trans. Electr. Insul. 27 961
[38]	Li W Q, Zhang H B 2010 Micron 41 416
[39]	Zheng F H, Zhang Y W, Xia J F, Xiao C, An Z L 2009 J. Appl. Phys. 106 064105

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