n型有序多孔硅基氧化钨室温气敏性能研究

胡明; 刘青林; 贾丁立; 李明达

doi:10.7498/aps.62.057102

摘要

利用电化学腐蚀方法制备了n型有序多孔硅, 并以此为基底用直流磁控溅射法在其表面溅射不同厚度的氧化钨薄膜. 利用X射线和扫描电子显微镜表征了材料的成分和结构, 结果表明, 多孔硅的孔呈柱形有序分布, 溅射10 min的WO3薄膜是多晶结构, 比较松散地覆盖在整个多孔硅的表面. 分别测试了多孔硅和多孔硅基氧化钨在室温条件下对二氧化氮的气敏性能, 结果表明, 相对于多孔硅, 多孔硅基氧化钨薄膜对二氧化氮的气敏性能显著提高. 对多孔硅基氧化钨复合结构的气敏机理分析认为, 多孔硅和氧化钨薄膜复合形成的异质结对良好的气敏性能起到主要作用, 氧化钨薄膜表面出现了反型层引起了气敏响应时电阻的异常变化.

关键词:

Abstract

n-type porous silicons are prepared by the electrochemical corrosion method, on which tungsten oxide thin films with different thickness values are sputtered using DC reactive magnetron sputtering. The structures of ordered porous silicons and tungsten oxide thin films are characterized using field emission scanning electron microscope, which show that the pores are pillared and ordered and the thin films cover the porous layer loosely with many pores open to ambient air. The X-ray diffraction characterization indicates that the lattice structure of tungsten oxide thin film is mainly triclinic polycrystalline. The gas-sensing properties at room temperature for both ordered porous silicon and composite structure are studied, which indicate that the latter is much more sensitive to nitrogen dioxide than the former. And there is a critical spurting time of WO3 thin film, which in our case is 10 min. The sensing mechanism of composite structure is discussed and the probable explanation for the improvement of sensitivity to NO2 is the formation of hetero-junctions between the ordered porous silicon layer and the WO3 thin film. In addition, there exists an inversion layer on the surface of the WO3 thin film, which causes the anomalous resistance to change during the gas sensing measurements.

Keywords:

ordered porous silicon /
tungsten oxide thin films /
nitrogen dioxide /
gas-sensing properties at room temperature

作者及机构信息

1.
天津大学电子信息工程学院, 天津 300072

基金项目: 国家自然科学基金 (批准号: 60771019) 和天津市应用基础及前沿技术研究计划 (批准号: 11JCZDJC15300) 资助的课题.

Authors and contacts

1.
School of Electronic Information Engineering, Tianjin University, Tianjin 300072, China

Funds: Project supported by the National Natural Science Foundation of China (Grant No. 60771019), and the Tianjin Key Research Program of Application Foundation and Advanced Technology, China (Grant No. 11JCZDJC15300).

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[36]	Dai F P, Lv S Y, Feng B X, Jiang S R, Chen C 2003 Acta Phys. Sin. 52 1003 (in Chinese) [代富平, 吕淑媛, 冯博学, 蒋生蕊, 陈冲 2003 52 1003]
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[38]	Ghimbeu C M, Lumbreras M, Siadat M, Schoonman J 2010 Mater. Sci. Semicond. Process. 13 1
[39]	Granitzer P, Rumpf K, Pölt P, Reichmann A, Krenn H 2007 Physica E 38 205
[40]	Ouyang H, Christophersen M, Viard R, Miller B L, Fauchet P M 2005 Adv. Funct. Mater. 15 1851
[41]	Sun F Y, Hu M, Sun P, Liu B, Zhang J 2010 Nanotechnology and Precision Engineering 8 156
[42]	Gurlo A, Bârsan N, Oprea A, Sahm M, Sahm T, Weimar U 2004 Appl. Phys. Lett. 85 2280
[43]	Qin Y, Sun X, Li X, Hu M 2012 Sens. Actuators B 162 244
[44]	Hao Q, Li L, Yin X, Liu S, Li Q, Wang T 2011 Mater. Sci. Eng. B 176 600
[45]	Oprea A, Bârsan N, Weimar U 2009 Sens. Actuators B 142 470
[46]	Zhang C, Debliquy M, Boudiba A, Liao H, Coddet C 2010 Sens. Actuators B 144 280
[47]	Wang J X, Sun X W, Yang Y, Wu C M L 2009 Nanotechnology 20 465501

施引文献

[1]	Fine G F, Cavanagh L M, Afonja A, Binions R 2010 Sensors 10 5469
[2]	Kaur J, Roy S C, Bhatnagar M C 2007 Sens. Actuators B 123 1090
[3]	Choi Y J, Hwang I S, Park J G, Choi K J, Park J H, Lee J H 2008 Nanotechnology 19 095508
[4]	Baratto C, Sberveglieri G, Onischuk A, Caruso B, Stasio S D 2004 Sens. Actuators B 100 261
[5]	Cho P S, Kim K W, Lee J H 2006 J. Electroceram 17 975
[6]	Ahn M W, Park K S, Heo J H, Kim D W, Choi K J, Park J G 2009 Sens. Actuators B 138 168
[7]	Shen Y, Yamazaki T, Liu Z, Meng D, Kikuta T, Nakatani N 2009 Thin Solid Films 517 2069
[8]	Tamaki J, Hashishin T, Uno Y, Dao D V, Sugiyama S 2008 Sens. Actuators B 132 234
[9]	Zeng J, Hu M, Wang W, Chen H, Qin Y 2012 Sens. Actuators B 161 447
[10]	Hu M, Wang W D, Zeng J, Qin Y X 2011 Chin. Phys. B 20 102101
[11]	Qin Y X, Wang F, Shen W J, Hu M 2012 Acta Phys. Sin. 61 057301 (in Chinese) [秦玉香, 王飞, 沈万江, 胡明 2012 61 057301]
[12]	Chen L, Bai S, Zhou G, Li D, Chen A, Liu C C 2008 Sens. Actuators B 134 360
[13]	Zhang C, Boudiba A, Olivier M G, Snyders R, Debliquy M 2011 Procedia Engineering 25 823
[14]	Srivastava S, Jain K, Singh V N, Singh S, Vijayan N, Dilawar N, Gupta G, Senguttuvan T D 2012 Nanotechnology 23 205501
[15]	Shimanoe K, Nishiyama A, Yuasa M, Kida T, Yamazoe N 2009 Procedia Chemistry 1 212
[16]	An S, Park S, Ko H, Lee C 2012 Appl. Phys. A 108 53
[17]	Cao B, Chen J, Tang X, Zhou W 2009 J. Mater. Chem. 19 2323
[18]	Meng D, Shaalan N M, Yamazaki T, Kikuta T 2012 Sens. Actuators B 169 113
[19]	Sun S B, Chang X T, Li Z J 2010 Mater. Res. Bull. 45 1075
[20]	Senguttuvan T D, Srivastava V, Tawal J, Mishra M, Srivastava S, Jain K 2010 Sens. Actuators B 150 384
[21]	Fang F, Kennedy J, Futter J, Hopf T, Markwitz A, Manikandan E, Henshaw G 2011 Nanotechnology 22 335702
[22]	Liu G Y, Tan X W, Yao J C, Wang Z, Xiong Z H 2008 Acta Phys. Sin. 57 514 (in Chinese) [刘光友, 谭兴文, 姚金才, 王振, 熊祖洪 2008 57 514]
[23]	Ren P, Liu X B, Shi X H, Liu Y, Liu Y, Ding X M, Hou X Y, Liao T C, Xiong Z H 2005 Acta Phys. Sin. 54 416 (in Chinese) [任鹏, 刘小兵, 史向华, 柳玥, 柳毅, 丁训民, 侯晓远, 廖太长, 熊祖洪 2005 54 416]
[24]	Chen H Q, Hu M, Zeng J, Wang W D 2012 Chin. Phys. B 21 058201
[25]	Zhang W, Vasconcelos E A, Uchida H, Katsube T, Nakatsubo T, Nishioka Y 2000 Sens. Actuators B 65 154
[26]	Baratto C, Sberveglieri G, Comini E, Faglia G, Benussi G, Ferrara V L, Quercia L, Francia G D, Guidi V, Vincenzi D, Boscarino D, Rigato V 2000 Sens. Actuators B 68 74
[27]	Boarino L, Baratto C, Geobaldo F, Amato G, Comini E, Rossi A M, Faglia G, Lérondel G, Sberveglieri G 2000 Mater. Sci. Eng. B 69 210
[28]	Boarino L, Rocchia M, Baratto C, Rossi A M, Garrone E, Borini S, Geobaldo F, Comini E, Faglia G, Sberveglieri G, Amato G 2000 Phys. Stat. Sol. A 182 465
[29]	Jane A, Dronov R, Hodges A, Voelcker N H 2009 Trends Biotechnol. 27 230
[30]	Anglin E J, Cheng L, Freeman W R, Sailor M J 2008 Adv. Drug Deliver. Rev. 60 1266
[31]	Jalkanen T, Tuura J, Mäkilä E, Salonen J 2010 Sens. Actuators B 147 100
[32]	Chen H Q, Hu M, Zeng J, Wang W D 2012 Chin. Phys. B 21 058201
[33]	Ozdemir S, Gole J L 2007 Curr. Opin. Solid State Mater. Sci. 11 92
[34]	Blackman C S, Correig X, Katko V, Mozalev A, Parkin I P, Alcubilla R, Trifonov T 2008 Mater. Lett. 62 4582
[35]	Kanungo J, Saha H, Basu S 2010 Sens. Actuators B 147 128
[36]	Dai F P, Lv S Y, Feng B X, Jiang S R, Chen C 2003 Acta Phys. Sin. 52 1003 (in Chinese) [代富平, 吕淑媛, 冯博学, 蒋生蕊, 陈冲 2003 52 1003]
[37]	Vallejos S, Khatko V, Calderer J, Gracia I, Cané C, Llobet E, Correig X 2008 Sens. Actuators B 132 209
[38]	Ghimbeu C M, Lumbreras M, Siadat M, Schoonman J 2010 Mater. Sci. Semicond. Process. 13 1
[39]	Granitzer P, Rumpf K, Pölt P, Reichmann A, Krenn H 2007 Physica E 38 205
[40]	Ouyang H, Christophersen M, Viard R, Miller B L, Fauchet P M 2005 Adv. Funct. Mater. 15 1851
[41]	Sun F Y, Hu M, Sun P, Liu B, Zhang J 2010 Nanotechnology and Precision Engineering 8 156
[42]	Gurlo A, Bârsan N, Oprea A, Sahm M, Sahm T, Weimar U 2004 Appl. Phys. Lett. 85 2280
[43]	Qin Y, Sun X, Li X, Hu M 2012 Sens. Actuators B 162 244
[44]	Hao Q, Li L, Yin X, Liu S, Li Q, Wang T 2011 Mater. Sci. Eng. B 176 600
[45]	Oprea A, Bârsan N, Weimar U 2009 Sens. Actuators B 142 470
[46]	Zhang C, Debliquy M, Boudiba A, Liao H, Coddet C 2010 Sens. Actuators B 144 280
[47]	Wang J X, Sun X W, Yang Y, Wu C M L 2009 Nanotechnology 20 465501

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