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Magnetic quantum-dot cellular automata (MQCA) function arrays are fabricated by electron beam lithography, thermal evaporation and lift-off technologies at room temperature. The effects of exposure dose and exposure time on MQCA function array patterns with three various spacings are experimentally investigated. The results show that the ideal pattern can only be obtained with 100 pA electron beam current and 0.38 μs exposure time. Magnetic force microscopy measurement on the fabricated inverter structure shows that the array demonstrates correct logic operation, which validates the feasibility of fabrication process for MQCA function arrays. Moreover, defect is observed in the experiments, simulations on the defective array show that missing nanomagnet defect in the array leads to signal inversion error.
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Keywords:
- nanomagnet /
- electron beam lithography /
- magnetic force microscopy /
- spacing
[1] Imre A, Csaba G, Ji L, Bernstein G H, Porod W 2006 Science 311 205
[2] Niemier M, Dingler A, Sharon H X 2008 Proceedings of 26th IEEE International Conference on Computer Design 506
[3] Carlton D B, Emley N C, Tuchfeld E, Bokor J 2008 Nano Lett. 8 4173
[4] Lent C S, Tougaw P D 1997 Proc. IEEE 85 541
[5] Amlani I, Orlov A, Toth G, Bernstein G H, Lent C S, Snider G L 1999 Science 284 5412
[6] Csaba G, Lugli P, Csurgay A, Porod W 2005 J. Comput. Electron. 4 105
[7] Bernstein G H, Imre A,Metlushko V, Orlov A, Zhou L, Ji L, Csaba G, Porod W 2005 Microelectron. J. 36 619
[8] Pulecio J F, Bhanja S 2010 J. Appl. Phys. 107 034308
[9] Alam M T, Siddiq M J, Bernstein G H, Niemier M, Porod W, Sharon H X 2010 IEEE Trans. Nanotechnol. 9 348
[10] Yang X K, Cai L, Kang Q, Bai P, Zhao X H, Feng C W, Zhang L S 2011 Acta Phys. Sin. 60 098503 (in Chinese) [杨晓阔, 蔡理, 康强, 柏鹏, 赵晓辉, 冯朝文, 张立森 2011 60 098503]
[11] Orlov A O, Imre A, Csaba G, Ji L L, PorodWBernstein G H 2008 J. Nanoelectron. Optoelectron. 3 1
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[1] Imre A, Csaba G, Ji L, Bernstein G H, Porod W 2006 Science 311 205
[2] Niemier M, Dingler A, Sharon H X 2008 Proceedings of 26th IEEE International Conference on Computer Design 506
[3] Carlton D B, Emley N C, Tuchfeld E, Bokor J 2008 Nano Lett. 8 4173
[4] Lent C S, Tougaw P D 1997 Proc. IEEE 85 541
[5] Amlani I, Orlov A, Toth G, Bernstein G H, Lent C S, Snider G L 1999 Science 284 5412
[6] Csaba G, Lugli P, Csurgay A, Porod W 2005 J. Comput. Electron. 4 105
[7] Bernstein G H, Imre A,Metlushko V, Orlov A, Zhou L, Ji L, Csaba G, Porod W 2005 Microelectron. J. 36 619
[8] Pulecio J F, Bhanja S 2010 J. Appl. Phys. 107 034308
[9] Alam M T, Siddiq M J, Bernstein G H, Niemier M, Porod W, Sharon H X 2010 IEEE Trans. Nanotechnol. 9 348
[10] Yang X K, Cai L, Kang Q, Bai P, Zhao X H, Feng C W, Zhang L S 2011 Acta Phys. Sin. 60 098503 (in Chinese) [杨晓阔, 蔡理, 康强, 柏鹏, 赵晓辉, 冯朝文, 张立森 2011 60 098503]
[11] Orlov A O, Imre A, Csaba G, Ji L L, PorodWBernstein G H 2008 J. Nanoelectron. Optoelectron. 3 1
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