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A FeCuNbSiB/FeNi/PZT laminated composite is developed and comparatively studied with a FeNi/PZT laminated composite. The influence of high-permeability FeCuNbSiB alloy on applied DC magnetic field, piezomagnetic coefficient and optimal bias magnetic field of FeNi is investigated. The experimental results show that compared with in the two-phase FeNi/PZT, in the three-phase FeCuNbSiB/FeNi/PZT laminated composite, (i) the optimal bias magnetic field decreases from 200Oe to 55Oe, and the maximum magnetoelectric(ME) voltage coefficient increases from 1.59V/Oe to 2.77V/Oe; (ii) under small bias magnetic field, the ME voltage coefficient increases by a factor of 1.7—7.8; (iii) the sensitivity of the ME voltage coefficient for the laminated composite to a DC magnetic field increases from 19.1mV/Oe to 158.6mV/Oe. The variations in ME effect of three-phase composie result from the enhancement of magnetizetion at end faces, which is generated by introducing the high permeability material phase.
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Keywords:
- laminated composite /
- optimum bias magnetic /
- high-permeability /
- magnetoelectric voltage coefficient
[1] Ryu J, Carazo A V, Uchino K, Kim H 2001 Jpn. J. Appl. Phys. 40 4948
[2] Dong S X, Zhai J Y, Li J F, Viehland D 2006 Appl. Phys. 100 124108-1
[3] Dong S X, Zhai J Y, Li J F, Viehland D 2006 Appl. Phys. Lett. 89 122903
[4] Dong S X, Cheng J R, Li J F, Viehland D 2003 Appl. Phys. Lett. 83 4812
[5] Dong S X, Li J F, Viehland D, Cheng J, Cross L E 2004 Appl. Phys. Lett. 85 3534
[6] Dong S X, Li J F, Viehland D 2004 Appl. Phys. Lett. 85 2307
[7] Dong S X, Li J F, Viehland D 2006 Mater. Sci. 41 97
[8] Li P, Zheng M 2006 IEEE International Confe-rence on Information Acquisition 1 1010
[9] Bian L X, Wen Y M, Li P 2009 Acta Phys. Sin. 58 4205 (in Chinese)[卞雷祥、文玉梅、李 平 2009 58 4205]
[10] Liu X X, Dai B, Ni J 2009 J. Mag. Mat. & Dev0 6 24 (in Chinese)[刘晓霞、代 波、倪 经 2009 磁性材料及器件 6 24]
[11] Zhao K H, Chen X M 2003 Electromagnetism (Beijing: Higher Education Press) p226 (in Chinese)[赵凯华、陈熙谋 2003 电磁学 (北京: 高等教育出版社) 第226页]
[12] Yang C H, Wen Y M, Li P, Bian L X 2008 Acta Phys. Sin. 57 7292 (in Chinese) [阳昌海、文玉梅、李 平、卞雷祥 2008 57 7292]
[13] Yang F, Wen Y M, Li P, Zheng M, Bian L X 2007 Acta Phys. Sin. 56 3539 (in Chinese)[杨 帆、文玉梅、李 平、郑 敏、卞雷祥 2007 56 3539]
[14] Hashin Z, Shtrikman S 1962 J. Appl. Phys. 33 3125
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[1] Ryu J, Carazo A V, Uchino K, Kim H 2001 Jpn. J. Appl. Phys. 40 4948
[2] Dong S X, Zhai J Y, Li J F, Viehland D 2006 Appl. Phys. 100 124108-1
[3] Dong S X, Zhai J Y, Li J F, Viehland D 2006 Appl. Phys. Lett. 89 122903
[4] Dong S X, Cheng J R, Li J F, Viehland D 2003 Appl. Phys. Lett. 83 4812
[5] Dong S X, Li J F, Viehland D, Cheng J, Cross L E 2004 Appl. Phys. Lett. 85 3534
[6] Dong S X, Li J F, Viehland D 2004 Appl. Phys. Lett. 85 2307
[7] Dong S X, Li J F, Viehland D 2006 Mater. Sci. 41 97
[8] Li P, Zheng M 2006 IEEE International Confe-rence on Information Acquisition 1 1010
[9] Bian L X, Wen Y M, Li P 2009 Acta Phys. Sin. 58 4205 (in Chinese)[卞雷祥、文玉梅、李 平 2009 58 4205]
[10] Liu X X, Dai B, Ni J 2009 J. Mag. Mat. & Dev0 6 24 (in Chinese)[刘晓霞、代 波、倪 经 2009 磁性材料及器件 6 24]
[11] Zhao K H, Chen X M 2003 Electromagnetism (Beijing: Higher Education Press) p226 (in Chinese)[赵凯华、陈熙谋 2003 电磁学 (北京: 高等教育出版社) 第226页]
[12] Yang C H, Wen Y M, Li P, Bian L X 2008 Acta Phys. Sin. 57 7292 (in Chinese) [阳昌海、文玉梅、李 平、卞雷祥 2008 57 7292]
[13] Yang F, Wen Y M, Li P, Zheng M, Bian L X 2007 Acta Phys. Sin. 56 3539 (in Chinese)[杨 帆、文玉梅、李 平、郑 敏、卞雷祥 2007 56 3539]
[14] Hashin Z, Shtrikman S 1962 J. Appl. Phys. 33 3125
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