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结合微腔面发射器件辐射/发光亮度的空间分布以及相对光谱功率分布给出了器件外量子效率的计算模型. 该模型可以计算工作于不同波段的微腔面发射器件的外量子效率,如红外波段的垂直腔面发射激光器,可见光波段的微腔有机发光二极管和谐振腔发光二极管以及太赫兹波段的平面微腔结构等. 制备了结构为玻璃/DBR /ITO /NPB /Alq ∶C545T/Alq/LiF/Al的微腔有机电致发光器件,测试其不同观察角度下器件的发光亮度以及发光光谱. 当电流密度和发光亮度分别为14 A/m2和100 cd/
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关键词:
- 外量子效率 /
- 平面微腔器件 /
- 辐射/发光亮度空间分布
The calculation models of the external quantum efficiency for the planar surface emitting devices are presented with considering their spatial distribution of radiance/luminance and relative spectral power distribution. These models can be applied to all kinds of planar surface emitting devices including OLEDs, VCSEL, MOLED, MCLED and planar THz emitting devices. Two planar emitting devices with and without cavity are fabricated with the structure of Glass /DBR /ITO /NPB /Alq ∶C545T /Alq /LiF /Al and Glass /ITO /NPB /Alq ∶C545T /Alq /LiF /Al. The external quantum efficiencies are calculated at different current densities using the corresponding model. The external quantum efficiency of the cavity device is close to 1.5% at a current density of 14 A/m2 and brightness of 100 cd/m2, and reaches 2% around 0.14 A/m2 and 2.2 cd/m2.-
Keywords:
- external quantum efficiency /
- microcavity surface emitting device /
- spatial distribution of radiance/luminance
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[8] Liu X, Bai Y, Cao J, Wei F X, Zhang X B, Zhu W Q, Jiang X Y, Zhang Z L 2007 Spectrosc. Spect. Anal. 27 1696 (in Chinese) [刘 向、白 钰、曹 进、委福祥、张晓波、朱文清、蒋雪茵、张志林 2007 光谱学与光谱分析 27 1696]
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[10] Shirai H, Kishimoto E, Kokuhata T, Miyagawa H, Koshiba S, Nakanishi S, Itoh H, Hangyo M, Kim T G, Tsurumachi N 2009 Appl. Opt. 48 6934
[11] Gu G, Garbuzov D Z, Burrows P E, Venkatesh S, Forrest S R, Thompson M E 1997 Opt. Lett. 22 396
[12] Schubert E F, Hunt N E J, Micovic M, Malik R J, Sivco D L, Cho A Y, Zydzik G J 1994 Science 265 943
[13] Vuckovic J, Loncar M, Scherer A 2000 IEEE J. Quant. Electron. 36 1131
[14] Forrest S R, Bradley D D C, Thompson M E 2003 Adv. Mater. 15 1043
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[1] Slootsky M, Forrest S R 2009 Appl. Phys. Lett. 94 163302
[2] Purcell E M 1946 Phys. Rev. 69 681
[3] Ma F Y, Liu X Y, Zhang C Y, Li H B, Wang L J 2006 Jpn. J. Appl. Phys. 45 9224
[4] Xu D 2009 Acta Phys. Sin. 58 2781 (in Chinese) [徐 登 2009 58 2781]
[5] Zhang C Y, Xiao L G, Qin L, Lin J, Wang L Y, Li Y T 2009 Acta Opt. Sin. 29 1967 (in Chinese) [张春玉、肖力光、秦 丽、林 杰、王立艳、李颜涛 2009 光学学报 29 1967]
[6] Cao J, Liu X, Zhang X B, Wei F X, Zhu W Q, Jiang X Y, Zhang Z L, Xu S H 2007 Acta Phys. Sin. 56 1088 (in Chinese) [曹 进、刘 向、张晓波、委福祥、朱文清、蒋雪茵、张志林、许少鸿 2007 56 1088]
[7] Li J J, Yang Z, Han J, Deng J, Zou D S, Kang Y Z, Ding L, Shen G D 2009 Acta Phys. Sin. 58 6304 (in Chinese) [李建军、杨 臻、韩 军、邓 军、邹德恕、康玉柱、丁 亮、沈光地 2009 58 6304]
[8] Liu X, Bai Y, Cao J, Wei F X, Zhang X B, Zhu W Q, Jiang X Y, Zhang Z L 2007 Spectrosc. Spect. Anal. 27 1696 (in Chinese) [刘 向、白 钰、曹 进、委福祥、张晓波、朱文清、蒋雪茵、张志林 2007 光谱学与光谱分析 27 1696]
[9] Zhang J W, Ning Y Q, Wang Z F, Li T, Cui J J, Zhang Y, Liu G Y, Zhang X, Qin L, Liu Y, Wang L J 2009 Chin. J. Opt. Appl. Opt. 2 65 (in Chinese) [张建伟、宁永强、王贞福、李 特、崔锦江、张 岩、刘光裕、张 星、秦 丽、刘 云、王立军 2009 中国光学与应用光学 2 65]
[10] Shirai H, Kishimoto E, Kokuhata T, Miyagawa H, Koshiba S, Nakanishi S, Itoh H, Hangyo M, Kim T G, Tsurumachi N 2009 Appl. Opt. 48 6934
[11] Gu G, Garbuzov D Z, Burrows P E, Venkatesh S, Forrest S R, Thompson M E 1997 Opt. Lett. 22 396
[12] Schubert E F, Hunt N E J, Micovic M, Malik R J, Sivco D L, Cho A Y, Zydzik G J 1994 Science 265 943
[13] Vuckovic J, Loncar M, Scherer A 2000 IEEE J. Quant. Electron. 36 1131
[14] Forrest S R, Bradley D D C, Thompson M E 2003 Adv. Mater. 15 1043
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