Sr/Si界面沉积SrTiO3初始生长阶段的扫描遂道显微术研究

邱云飞; 杜文汉; 王兵

doi:10.7498/aps.60.036801

摘要

本文工作利用脉冲激光沉积术(PLD)和超高真空扫描隧道显微术(UHV-STM),研究了在Sr/Si(001)-(2×1)衬底表面上真空室温沉积几个单层SrTiO3薄膜的初始生长过程.经660 ℃退火处理后,Sr/Si衬底表面上形成了纳米岛状结构.经分析,这些纳米小岛为C49-TiSi2和 C54-TiSi2.实验结果表明,在没有氧气的情况下退火,Sr/Si界面无法有效阻止SrTiO3薄膜与Si衬底之间的相互作用.

关键词:

Abstract

SrTiO3 ultra-thin film was deposited on the Sr/Si(001) surface using pulsed laser deposition (PLD) at room temperature and studied using scanning tunneling microscopy (STM). After annealing at 660 ℃ for about 60 minutes in ultrahigh vacuum (UHV), nanosize islands were formed on the Sr/Si(001) surface. High resolution STM images and dI/dV mapping of islands on Sr/Si(001) were obtained. The islands can be attributed to TiSi2 islands with C49 and C54 structures. The existence of Sr on Si is not sufficient to prevent the reaction between Si and Ti in preparation of ultra-thin SrTiO3 films.

Keywords:

作者及机构信息

1.
中国科学技术大学合肥微尺度物质科学国家实验室,合肥 230026

基金项目: 国家自然科学基金(批准号:60771006)资助的课题.

Authors and contacts

1.
Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, China

参考文献

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施引文献

[1]	Nakagawara O, Kobayashi M, Yoshino Y, Katayama Y, Tabata H, Kawai T 1995 J. Appl. Phys. 78 7226
[2]	J H 2005 Chin. Phys. 14 2352
[3]	McKee R A, Walker F J, Chisholm M F 1998 Phys. Rev. Lett. 81 3014
[4]	Tambo T, Maeda K, Shimizu A, Tatsuyama C 1999 J. Appl. Phys. 86 3213
[5]	Yu Z, Ramdani J, Curless J A, Finder J M, Overgaard C D, Droopad R, Eisenbeiser K W, Hallmark J A, Ooms W J, Conner J R, Kaushik V S 2000 J. Vac. Sci. Technol. B 18 1653
[6]	Eisenbeiser K, Finder J M, Yu Z, Ramdani J, Curless J A, Hallmark J A, Droopad R, Ooms W J, Salem L, Bradshaw S, Overgaard C D 2000 Appl. Phys. Lett. 76 1324
[7]	Ahmet P, Koida T, Takakura M, Nakajima K, Yoshimoto M, Koinuma H, Tanaka M, Takeguchi M, Chikyow T 2002 Appl. Surf. Sci. 189 307
[8]	Wei Y, Hu X M, Liang Y, Jordan D C, Craigo B, Droopad R, Yu Z, Demkov A, Edwards J L, Ooms W J 2002 J. Vac. Sci. Technol. B 20 1402
[9]	McKee R A, Walker F J, Nardelli M B, Shelton W A, Stocks G M 2003 Science 300 1726
[10]	Zhang X, Demkov A A, Li H, Hu X, Wei Y, Kulik J 2003 Phys. Rev. B 68 125323
[11]	Li H, Hu X, Wei Y, Yu Z, Zhang X, Droopad R, Demkov A A, Edwards J, Moore K, Ooms W, Kulik J, Fejes P 2003 J. Appl. Phys. 93 4521
[12]	Forst C J, Ashman C R, Schwarz K, Blochl P E 2004 Nature 427 53
[13]	Yakovkin I N, Gutowski M 2004 Phys. Rev. B 70 165319
[14]	Yu Z, Liang Y, Overgaard C, Hu X, Curless J, Li H, Wei Y, Craigo B, Jordan D, Droopad R, Finder J, Eisenbeiser K, Marshall D, Moore K, Kulik J, Fejes P 2004 Thin Solid Films 462-463 51
[15]	He J Q, Jia C L, Vaithyanathan V, Schlom D G, Schubert J, Gerber A, Kolhstedt H H, Wang R H 2005 J. Appl. Phys. 97 104921
[16]	Kourkoutis L F, Hellberg C S, Vaithyanathan V, Li H, Parker M K, Andersen K E, Schlom D G, Muller D A 2008 Phys. Rev. Lett. 100 036101
[17]	Mi S B, Jia C L, Vaithyanathan V, Houben L, Schubert J, Schlom D G, Urban K 2008 Appl. Phys. Lett. 93 101913
[18]	Wang X F, Wang J, Li Q, Moreno M S, Zhou X Y, Dai J Y, Wang Y, Tang D 2009 J. Phys. D: Appl. Phys. 42 085409
[19]	Ma J H, Sun J L, Meng X J, Lin T, Shi F W, Chu J H 2005 Acta Phys. Sin. 54 1390 (in Chinese) [马建华、孙璟兰、孟祥建、林铁、石富文、褚君浩 2005 54 1390]
[20]	Ma J H, Meng X J, Lin T, Liu S J, Zhang X D, Sun J L, Chu
[21]	Mann R W, Clevenger L A, Agnello P D, White F R 1995 IBM J. Res. Dev. 39 403
[22]	Wang T, Oh S Y, Lee W J, Kim Y J, Lee H D 2006 Appl. Surf. Sci. 252 4943
[23]	Alessandrino M S, Privitera S, Grimaldi M G, Bongiorno C, Pannitteri S, La Via F 2004 J. Appl. Phys. 95 1977
[24]	Jeon H, Yoon G, Nemanich R J 1997 Thin Solid Films 299 178
[25]	Yang W, Jedema F J, Ade H, Nemanich R J 1997 Thin Solid Films 308 627
[26]	Ezoe K, Kuriyama H, Yamamoto T, Ohara S, Matsumoto S 1998 Appl. Surf. Sci. 130 13
[27]	Medeiros-Ribeiro G, Ohlberg D A A, Bowler D R, Tanner R E, Briggs G A D, Williams R S 1999 Surf. Sci. 431 116
[28]	Briggs G A D, Basile D P, Medeiros-Ribeiro G, Kamins T I, Ohlberg D A A, Williams R S 2000 Surf. Sci. 457 147
[29]	Oh J, Meunier V, Ham H, Nemanich R J 2002 J. Appl. Phys. 92 3332
[30]	Zhao F Z, Cui X F, Wang B, Hou J G 2006 Appl. Surf. Sci. 253 2785
[31]	Yang T H, Chi K S, Chen L J 2005 J. Appl. Phys. 98 034302
[32]	Toramaru M, Iida T, Sato K, Ohno S, Shudo K, Morikawa Y, Tanaka M 2008 J. Phys.: Condens. Matter 20 485006
[33]	Wang P Y, Yang C, Li L C, Li Y R 2008 Acta Phys. Sin. 57 2340 (in Chinese) [王佩怡、杨春、李来才、李言荣 2008 57 2340]
[34]	Du W H, Wang B, Xu L, Hu Z P, Cui X F, Pan B C, Yang J L, Hou J G 2008 J. Chem. Phys. 129 164707
[35]	Goncharova L V, Starodub D G, Garfunkel E, Gustafsson T, Vaithyanathan V, Lettieri J, Schlom D G 2006 J. Appl. Phys. 100 014912
[36]	Berti M, Drigo A V, Cohen C, Siejka J, Bentini G G, Nipoti R, Guerri S 1984 J. Appl. Phys. 55 3558

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