磁电薄膜与微波作用研究

郑鸿; 杨成韬

doi:10.7498/aps.59.5055

摘要

建立了双层磁电复合薄膜模型,当磁电材料尺寸可以与微波波长相比拟时,微波在传播方向上的偏导不为零,得到了微波与磁电材料作用的非齐次偏微分方程,并在谐振条件下对该方程进行了解析求解.推导出磁电系数和材料等效电学参数的解析表达式,结果表明磁电材料的磁电系数多出相关的耦合项,其大小不但与材料本身参数有关,还与微波在材料中的波速有关;等效导纳多出的耦合项与微波的频率有关.

关键词:

The bilayered magnetoelectric composite model has been analyzed. The non-homogeneous partial differential equation of the magnetoelectric material interacting with the microwave has been obtained in the condition that the partial derivative of the microwave is non-zero along the transmitting direction when the size of the magnetoelectric material is comparable with the wavelength. The analytic solution is solved for the equation at resonant condition, and then the analytic expressions of the magnetoelectric coefficient and the equivalent electric parameters are calculated. The results show that there is a correlative coupling term in excess in the magnetoelectric coefficient,the magnitude of which is related not only to the material parameters, but also to the microwave’s velocity in the material, and the equivalent admittance is related to the microwave’s frequency.

Keywords:

magnetoelectric thin film /
microwave /
non-homogeneous partial differential equation

作者及机构信息

郑鸿,
杨成韬

1.
电子科技大学电子薄膜与集成器件国家重点实验室,成都 610054

基金项目: 国家重点基础研究发展计划(批准号:61363Z)资助的课题.

Authors and contacts

1.
State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

参考文献

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[2]	Nan C W, Bichurin M I, Dong S X, Viehland A D, Srinivasan G 2008 J. Appl. Phys. 103 31101
[3]	Zhang Y, Deng C Y, Ma J, Lin Y H, Nan C W 2008 Chin. Phys. B 17 1056
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[7]	Bichurin M, Viehland D, Srinivasan G 2007 J. Electro. Ceramics 19 243
[8]	Harshe G, Dougherty J P, Newnham R E 1993 Proc. SPIE 1919 224
[9]	Dong S X, Li J F, Viehland D 2003 IEEE Trans. Ultrasonics, Ferroelectrics and Frequency Control 50 1253
[10]	Feigel A 2004 Phys. Rev. Lett. 92 20404
[11]	Obukhov Y N, Hehl F W 2007 arXiv v1 0708 11538
[12]	van Tiggelen B A, Rikken G L J A 2004 Phys. Rev. Lett. 93 268903
[13]	Birkeland O J, Brevik I 2007 Phys. Rev. E 76 66605
[14]	Schutzhold R, Plunien G 2004 Phys. Rev. Lett. 93 268901
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[16]	Obukhov Y N, Hehl F W 2008 Phys. Lett.A 372 3946
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[22]	Bichurin M I, Kornev I A, Petrov V M, Tatarenko A S, Kiliba Y V, Srinivasan G 2001 Phys. Rev. B 64 94409
[23]	Dong S X, Zhai J 2008 Phys. Solid State 53 2113
[24]	Pettiford C, Dasgupta S, Jin L, Yoon S D, Sun N X 2007 IEEE Trans. Magnetics 43 3343

施引文献

[1]	Ramesh R, Spaldin N A 2007 Nature Materials 6 21
[2]	Nan C W, Bichurin M I, Dong S X, Viehland A D, Srinivasan G 2008 J. Appl. Phys. 103 31101
[3]	Zhang Y, Deng C Y, Ma J, Lin Y H, Nan C W 2008 Chin. Phys. B 17 1056
[4]	Ma J, Shi Z, Lin Y H, Nan C W 2009 Acta Phys. Sin. 58 5852(in Chinese) [马静、施展、林元华、南策文 2009 58 5852]
[5]	Yang F, Wen Y M, Li P, Bian L X 2007 Acta Phys. Sin. 56 3537(in Chinese)[杨帆、文玉梅、李平、卞雷祥 2007 56 3537]
[6]	Bichurin M I, Petrov V M, Ryabkov O V, Averkin S V, Srinivasan G 2005 Phys. Rev. B 72 060408
[7]	Bichurin M, Viehland D, Srinivasan G 2007 J. Electro. Ceramics 19 243
[8]	Harshe G, Dougherty J P, Newnham R E 1993 Proc. SPIE 1919 224
[9]	Dong S X, Li J F, Viehland D 2003 IEEE Trans. Ultrasonics, Ferroelectrics and Frequency Control 50 1253
[10]	Feigel A 2004 Phys. Rev. Lett. 92 20404
[11]	Obukhov Y N, Hehl F W 2007 arXiv v1 0708 11538
[12]	van Tiggelen B A, Rikken G L J A 2004 Phys. Rev. Lett. 93 268903
[13]	Birkeland O J, Brevik I 2007 Phys. Rev. E 76 66605
[14]	Schutzhold R, Plunien G 2004 Phys. Rev. Lett. 93 268901
[15]	Feigel A 2004 Phys. Rev. Lett. 93 268902
[16]	Obukhov Y N, Hehl F W 2008 Phys. Lett.A 372 3946
[17]	Zhao J, Yin R C, Fan T, Lu M H, Chen Y F, Zhu Y Y, Zhu S N, Ming N B 2008 Phys. Rev. B 77 75126
[18]	He H C, Lin Y H, Nan C W 2008 Chin.Sci.Bull. 53 1138(in Chinese) [何泓材、林元华、南策文 2008 科学通报53 1138]
[19]	Zhang X J, Zhu R Q, Zhao J, Chen Y F, Zhu Y Y 2004 Phys. Rev. B 69 85118
[20]	Liu H, Zhu S N, Dong Z G, Zhu Y Y, Chen Y F, Ming N B, Zhang X 2005 Phys. Rev. B 71 125106
[21]	Bao X, Hu M 2001 An Introduction to Electric Devices (Beijing: Beijing Institute of Technology Press) p190 (in Chinese)[包兴、胡明 2001 电子器件导论(北京:北京理工大学出版社)第190页]
[22]	Bichurin M I, Kornev I A, Petrov V M, Tatarenko A S, Kiliba Y V, Srinivasan G 2001 Phys. Rev. B 64 94409
[23]	Dong S X, Zhai J 2008 Phys. Solid State 53 2113
[24]	Pettiford C, Dasgupta S, Jin L, Yoon S D, Sun N X 2007 IEEE Trans. Magnetics 43 3343

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