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The Er2SiO5 films with strong room-temperature photoluminescence have been fabricated by using the sol-gel spin coating method. The effects of sintering temperature and time on phase structure and phase transformation of ErSiO films have been investigated. A mixture of Er2O3 crystal and amorphous SiO2 was obtained below 1000 ℃, and the Er2SiO5 phase with high (100), (200), and (300) preferred orientation was detected when the temperature increased to higher than 1200 ℃. The phase structure has an evident influence on the photoluminescence properties for ErSiO films. For the phase structure of Er2O3 crystal with amorphous SiO2, the weak PL spectra with a main peak at λ=1.535 μm were observed. The strongest main PL peak moved to λ=1.528 μm, and the intensity was increased about 10—20 times when the phase structure changed to Er2SiO5. The Er2SiO5 films with strong room temperature photoluminescence are promising candidates for application in Si-based light source and amplifier.
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Keywords:
- luminescence /
- optical films /
- sol-gel method /
- Er silicate
[1] ［1］Pavesi L, Lockwood D J 2004 Silicon Photonics (Berlin: Springer)
[2] ［2］Polman A 1997 J Appl. Phys. 82 1
[3] ［3］Li C R, Ming C G, Li S F, Ding J H, Wang B C, Zhang L 2008 Acta Phys. Sin. 57 6604 (in Chinese) ［李成仁、明成国、李淑凤、丁建华、王宝成、张丽 2008 57 6604］
[4] ［4］Xiao Z S, Xu F, Zhang T H, Cheng G A, Gu L L 2001 Acta Phys. Sin. 50 164 (in Chinese) ［肖志松、徐飞、张通和、程国安、顾岚 2001 50 164］
[5] ［5］Han H S, Seo S Y, Shin J H 2001 Appl. Phys. Lett. 79 4568
[6] ［6］Han H S, Seo S Y, Shin J H, Park N 2002 Appl. Phys. Lett. 81 3720
[7] ［7］Isshiki H, de Dood M J A., Kimura T, Polman A 2004 Appl. Phys. Lett. 85 4343
[8] ［8］Wang X J, Nakajima T, Isshiki H, Kimura T 2009 Appl. Phys. Lett. 95 041906
[9] ［9］ Miritello M, Savio R L, Iacona F, Franzo G, Irrera A, Piro A M, Bongiorno C, Priolo F 2007 Adv. Mater. 19 1582
[10] ］Yin Y, Sun K, Xu W J, Ran G Z, Qin G G, Wang S M, Wang C Q 2009 J. Phys.: Condens. Matter 21 012204
[11] ］Suh K, Shin J H, Seo S J, Bae B S 2006 Appl. Phys. Lett. 89 223102
[12] ］Wang X, Zhang J G, Cheng B W, Yu J Z, Wang Q M 2006 J. Crys. Growth 289 178
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[1] ［1］Pavesi L, Lockwood D J 2004 Silicon Photonics (Berlin: Springer)
[2] ［2］Polman A 1997 J Appl. Phys. 82 1
[3] ［3］Li C R, Ming C G, Li S F, Ding J H, Wang B C, Zhang L 2008 Acta Phys. Sin. 57 6604 (in Chinese) ［李成仁、明成国、李淑凤、丁建华、王宝成、张丽 2008 57 6604］
[4] ［4］Xiao Z S, Xu F, Zhang T H, Cheng G A, Gu L L 2001 Acta Phys. Sin. 50 164 (in Chinese) ［肖志松、徐飞、张通和、程国安、顾岚 2001 50 164］
[5] ［5］Han H S, Seo S Y, Shin J H 2001 Appl. Phys. Lett. 79 4568
[6] ［6］Han H S, Seo S Y, Shin J H, Park N 2002 Appl. Phys. Lett. 81 3720
[7] ［7］Isshiki H, de Dood M J A., Kimura T, Polman A 2004 Appl. Phys. Lett. 85 4343
[8] ［8］Wang X J, Nakajima T, Isshiki H, Kimura T 2009 Appl. Phys. Lett. 95 041906
[9] ［9］ Miritello M, Savio R L, Iacona F, Franzo G, Irrera A, Piro A M, Bongiorno C, Priolo F 2007 Adv. Mater. 19 1582
[10] ］Yin Y, Sun K, Xu W J, Ran G Z, Qin G G, Wang S M, Wang C Q 2009 J. Phys.: Condens. Matter 21 012204
[11] ］Suh K, Shin J H, Seo S J, Bae B S 2006 Appl. Phys. Lett. 89 223102
[12] ］Wang X, Zhang J G, Cheng B W, Yu J Z, Wang Q M 2006 J. Crys. Growth 289 178
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