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采用常规方法和分步注入法制备SOI-SIMNI（Silicon on Insulator-Separation by Implantation of Nitrogen）薄膜材料，用液氦低温霍耳效应进行了分析测量。测量结果表明：分步注入法制备得到的样品具有低的薄层电阻R□和较高的载流子迁移率。实验证明用分步注入法可以明显改善SIMNI薄膜材料的电学性能，对实验结果和机理进行了解释。
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关键词:
- 离子注入 /
- SOI-SIMNI材料 /
- 分步注入 /
- 霍耳效应测量
SOI-SIMNI (Silicon On Insulator-Separation by Implanted Nitrogen) films were formed by standard and multiplestep implantation methods. The Hal-l effects measurements (4-300K) show that the multiple-step implanted SIMNI films have a lower sheet resistance and higher carrier mobility than those in standard SIMNI films. The DLTS results indicated that there is a deep level defects Et=0.152eV in the standard SIMNI films, and no deep level defects in the multiple-step implanted SIMNI films, which have good electrical properties.-
Keywords:
- ion implantation /
- SOI-SIMNI films /
- multiple-step implantation /
- hall-effects measurements
[1] J.P. Colinge, Silicon-On-Insulator Technology, Materials To VLSI, Kluwer Academic Publishers, 1991 1-10.
[2] M. Fujishima et al., IEEE SSC 28(1993), 510.
[3] Ru Huang et al., IEEE Transaction on Electron Devices, 45(1998), 2079.
[4] W. P. Maszara, SOI Material:Ready to Take over Mainstream Bulk Si, 5th International Conference On Solid-State and Integrated Circuit Technology, Beijing, 1998, 716-719.
[5] Dian-Tong Lu and H. Ressel, Properties of SOI-SIMNI Films, 5th International Conference On Solid-State and Integrated Circuit Technology, Beijing, 1998, 307-310.
[6] L.J. Van der Pauw, Philips.Research Reports, 13(1958), 1.
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[1] J.P. Colinge, Silicon-On-Insulator Technology, Materials To VLSI, Kluwer Academic Publishers, 1991 1-10.
[2] M. Fujishima et al., IEEE SSC 28(1993), 510.
[3] Ru Huang et al., IEEE Transaction on Electron Devices, 45(1998), 2079.
[4] W. P. Maszara, SOI Material:Ready to Take over Mainstream Bulk Si, 5th International Conference On Solid-State and Integrated Circuit Technology, Beijing, 1998, 716-719.
[5] Dian-Tong Lu and H. Ressel, Properties of SOI-SIMNI Films, 5th International Conference On Solid-State and Integrated Circuit Technology, Beijing, 1998, 307-310.
[6] L.J. Van der Pauw, Philips.Research Reports, 13(1958), 1.
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