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使用自制的简易蒸发源,将金属Ga蒸镀在Ni(111)表面上。在亚单层时,用低能电子衍射(LEED)和俄歇电子能谱(AES)观测到Ga在Ni(111)面上形成(3(1/2)×3(1/2))R30°和(2×2)两种超结构。并建立起近似平衡图,粗略地确定了这两种超结构存在的覆盖度和温度范围。The structures of Ga atoms deposited on Ni(lll) surface was studied. When the coverage is less than one monolayer, two superstructures. (3(1/2)×3(1/2)) R30°and (2×2), have been observed, by means of LEED and AES.A quasi-equilibrium phase diagram has been drafted, and thus the rangs of coverage and temperature while these superstructures appear can be estimated.
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