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本文研究了在碳基上的铜合金蒸发薄膜的高温行为。用TEM和HVEM的加热台进行了观察并录像。Cu,Cu-Ti和Cu-Sn-Ti薄膜在分别加热到约640,700,750℃时,晶粒的衍射衬度开始迅速变化。在分别加热到约660,750,800℃时薄膜中空洞迅速扩展,最后形成孤立的小岛。扫描电子显微镜下观察到在石墨和金刚石基底上的薄膜加热到750—850℃时产生球化。在金刚石(100)和(111)面球化的不同形貌可以认为是由于浸润性的不同。用不同曲率下表面扩散的模型对薄膜中空洞的扩展速率进行了计算,得到与实验值数量级一致的结果。The high temperature behaviours of evaporated thin films of copper alloys (Cu-Ti, Cu-Sn-Ti, Cu-Si) on carbon substrate have been studied in heating stage of TEM and HVEM and recorded by a video tape recorder. The diffraction contrast of the grains in Cu, Cu-Ti and Cu-Sn-Ti films begins to vary rapidly at about 640, 700 and 750℃ respectively. The vacant areas in these films expand rapidly above about 660, 750 and 800℃. Finally the isolated islands are formed. The balling of these films on graphite and diamond substrate has been observed by SEM after heating to 750-850℃. The different morphology of the balling on the surfaces of diamond (100) and (111) is due to the different wetting abilities. The expansion rates of the vacant areas in these films have been calculated by using the model of surface diffusion under different curvatures. The calculated values agree with experimental results in the order of magnitude.
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