The chemical etching method has been used to investigate the dislocation "rosette" of silicon single crystal specimens under indentation at temperatures 800-1000℃. Experimental results show that all the dislocations introduced in silicon due to indentation distribute in the {111} slip planes; the dislocation lines are mostly oriented along the and directions. Analysis indicates that dislocation loops with the Burgers vector along the parallel to the {111} surface of indentation and with the Burgers vector along the inclined with the surface of indentation, are present. Discussion of the structure of the dislocation half-loops is given.